Power Field Effect Transistors Channel Enhancement Mode Lateral M
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Document Number: MRF7S21080H Rev. 11/2007
Power Field Effect Transistors
Channel Enhancement Mode Lateral MOSFETs
Designed CDMA base station applications with frequencies from 2110 2170 MHz. Suitable CDMA multicarrier amplifier applications. used Class Class SCDMA PCS/cellular radio applications. Typical Single Carrier CDMA Performance: Volts, Pout Watts Avg., Full Frequency Band, 3GPP Test Model DPCH with Clipping, Channel Bandwidth 3.84 MHz, Input Signal 0.01% Probability CCDF. Power Gain Drain Efficiency Device Output Signal 0.01% Probability CCDF ACPR Offset 3.84 Channel Bandwidth Capable Handling 10:1 VSWR, Vdc, 2140 MHz, Watts Peak Tuned Output Power Pout Compression Point Watts Features 100% Tested Guaranteed Output Power Capability Characterized with Series Equivalent Large Signal Impedance Parameters Internally Matched Ease Integrated Protection Greater Negative Gate Source Voltage Range Improved Class Operation Designed Digital Predistortion Error Correction Systems RoHS Compliant Tape Reel. Suffix Units inch Reel.
MRF7S21080HR3 MRF7S21080HSR3
2110 2170 MHz, AVG., SINGLE CDMA LATERAL CHANNEL POWER MOSFETs
CASE 465- STYLE MRF7S21080HR3
CASE 465A STYLE 780S MRF7S21080HSR3
Table Maximum Ratings
Rating Drain Source Voltage Gate Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS Tstg Value 0.5, 6.0, +150 Unit
Table Thermal Characteristics
Characteristic Thermal Resistance, Junction Case Case Temperature 79°C, Case Temperature 75°C, Symbol Value (2,3) 0.60 0.65 Unit °C/W
Continuous maximum temperature will affect MTTF. MTTF calculator available http://www.freescale.com/rf. Select Software Tools/Development Tools/Calculators access MTTF calculators product. Refer AN1955, Thermal Measurement Methodology Power Amplifiers. http://www.freescale.com/rf. Select Documentation/Application Notes AN1955.
Freescale Semiconductor, Inc., 2007. rights reserved.
MRF7S21080HR3 MRF7S21080HSR3
Device Data Freescale Semiconductor
Table Protection Characteristics
Test Methodology Human Body Model (per JESD22 A114) Machine Model (per EIA/JESD22 A115) Charge Device Model (per JESD22 C101) Class (Minimum) (Minimum) (Minimum)
Table Electrical Characteristics 25°C unless otherwise noted)
Characteristic Characteristics Zero Gate Voltage Drain Leakage Current (VDS Vdc, Vdc) Zero Gate Voltage Drain Leakage Current (VDS Vdc, Vdc) Gate Source Leakage Current (VGS Vdc, Vdc) Characteristics Gate Threshold Voltage (VDS Vdc, Adc) Gate Quiescent Voltage (VDS Vdc, mAdc) Fixture Gate Quiescent Voltage (VDD Vdc, mAdc, Measured Functional Test) Drain Source Voltage (VGS Vdc, 1.74 Adc) Dynamic Characteristics Reverse Transfer Capacitance (VDS mV(rms)ac MHz, Vdc) Output Capacitance (VDS mV(rms)ac MHz, Vdc) Input Capacitance (VDS Vdc, mV(rms)ac MHz) Crss Coss Ciss 0.64 VGS(th) VGS(Q) VGG(Q) VDS(on) IDSS IDSS IGSS Symbol Unit
Functional Tests Freescale Test Fixture, system) Vdc, Pout Avg., 2112.5 2167.5 MHz, Single Carrier CDMA, 3GPP Test Model DPCH, Clipping, 0.01% Probability CCDF. ACPR measured 3.84 Channel Bandwidth Offset. Power Gain Drain Efficiency Output Peak Average Ratio 0.01% Probability CCDF Adjacent Channel Power Ratio Input Return Loss ACPR 16.5 19.5
VGS(Q). Parameter measured Freescale Test Fixture, resistive divider network board. Refer Test Circuit schematic. Part internally matched both input output. (continued)
MRF7S21080HR3 MRF7S21080HSR3 Device Data Freescale Semiconductor
Table Electrical Characteristics 25°C unless otherwise noted) (continued)
Characteristic Video Bandwidth Pout where (Tone Spacing from VBW) IMD3 IMD3 frequency IMD3 (both sidebands) Gain Flatness Bandwidth Pout Avg. Average Deviation from Linear Phase Bandwidth Pout Average Group Delay Pout 2140 Part Part Insertion Phase Variation Pout 2140 MHz, Sigma Window Gain Variation over Temperature 30°C +85°C) Output Power Variation over Temperature 30°C +85°C) Symbol Unit Typical Performances Freescale Test Fixture, system) Vdc, 2110 2170 Bandwidth
Delay P1dB
0.12 22.3 6.21 151.6 0.009 0.008
dB/°C dBm/°C
MRF7S21080HR3 MRF7S21080HSR3 Device Data Freescale Semiconductor
VBIAS
VSUPPLY
INPUT
OUTPUT
0.325 0.083 Microstrip 0.921 0.083 Microstrip 0.126 0.083 Microstrip 0.645 0.083 Microstrip 0.275 0.669 Microstrip 0.114 0.764 Microstrip 0.374 0.764 Microstrip 0.180 0.524 Microstrip 0.075 0.083 Microstrip
Z10* Z11* Z12* Z14* Z15, Z16*
0.457 0.083 Microstrip 0.118 0.083 Microstrip 0.206 0.083 Microstrip 0.301 0.083 Microstrip 1.220 0.080 Microstrip 0.720 0.080 Microstrip Taconic TLX8 0300, 0.030, 2.55
Variable tuning
Figure MRF7S21080HR3(HSR3) Test Circuit Schematic
Table MRF7S21080HR3(HSR3) Test Circuit Component Designations Values
Part C10, C12, C13, C14, Description Chip Capacitors Chip Capacitor Chip Capacitor Chip Capacitors Chip Capacitor Chip Capacitors Electrolytic Capacitor, Radial Chip Resistors Chip Resistor Part Number ATC100B6R8BT500XT ATC100B0R5BT500XT 18125C224KAT1A C5750X5R1H106M ATC100B1R5BT500XT ATC100B0R2BT500XT 222213668221 CRCW12062001FKEA CRCW120610R0FKEA Manufacturer Vishay Vishay Vishay
MRF7S21080HR3 MRF7S21080HSR3 Device Data Freescale Semiconductor
AREA
MRF7S21080H Rev.
Figure MRF7S21080HR3(HSR3) Test Circuit Component Layout
MRF7S21080HR3 MRF7S21080HSR3 Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
DRAIN EFFICIENCY 18.8 18.6 Gps, POWER GAIN (dB) 18.4 18.2 17.8 17.6 17.4 PARC 17.2 2060 2080 2100 2120 Vdc, Pout (Avg.), Single-Carrier W-CDMA, 3.84 Channel Bandwidth Input Signal 0.01% Probability (CCDF) -0.5 -1.5 2160 2180 2200 -2.5 2220 PARC (dB)
2140
FREQUENCY (MHz)
Figure Output Peak Average Ratio Compression (PARC) Broadband Performance Pout Watts Avg.
18.2 Gps, POWER GAIN (dB) 17.8 17.6 17.4 17.2 16.8 16.6 PARC 16.4 2060 2080 2100 2120 2140 2160 2180 2200 Vdc, Pout (Avg.), Single-Carrier W-CDMA, 3.84 Channel Bandwidth Input Signal 0.01% Probability (CCDF) PARC (dB) -2.5 -3.5 2220
DRAIN EFFICIENCY
FREQUENCY (MHz)
Figure Output Peak Average Ratio Compression (PARC) Broadband Performance Pout Watts Avg.
Gps, POWER GAIN (dB) Pout, OUTPUT POWER (WATTS) Vdc, 2135 MHz, 2145 Two-Tone Measurements, Tone Spacing 1000 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) 1200 Vdc, 2135 MHz, 2145 Two-Tone Measurements, Tone Spacing 1200 1000
Pout, OUTPUT POWER (WATTS)
Figure Tone Power Gain versus Output Power
Figure Third Order Intermodulation Distortion versus Output Power
MRF7S21080HR3 MRF7S21080HSR3 Device Data Freescale Semiconductor
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) Order Pout, OUTPUT POWER (WATTS) Order Order Vdc, 2135 MHz, 2145 Two-Tone Measurements, Tone Spacing TWO-TONE SPACING (MHz) IM5-U IM5-L IM7-U IM7-L Vdc, Pout (PEP), Two-Tone Measurements f2)/2 Center Frequency 2140 IM3-L IM3-U
Figure Intermodulation Distortion Products versus Output Power
OUTPUT COMPRESSION 0.01% PROBABILITY CCDF (dB)
Figure Intermodulation Distortion Products versus Tone Spacing
Ideal 21.65 20.9 39.9 Vdc, 2140 MHz, Input Signal Actual DRAIN EFFICIENCY
Pout, OUTPUT POWER (WATTS)
Figure Output Peak Average Ratio Compression (PARC) versus Output Power
Gps, POWER GAIN (dB) Corrected, with Memory Correction Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (dBm) 2140 -30_C -30_C 25_C 85_C 25_C 85_C DRAIN EFFICIENCY
ACPR, UPPER LOWER RESULTS (dBc)
Vdc, 2140 MHz, Single-Carrier W-CDMA, Input Signal ACPR Offset 3.84 Integrated Bandwidth Uncorrected Upper Lower Corrected Memory Correction
Figure Digital Predistortion Correction versus ACPR Output Power
Figure Power Gain Drain Efficiency versus Output Power
MRF7S21080HR3 MRF7S21080HSR3 Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
2140 Gps, POWER GAIN (dB) MTTF (HOURS) Pout, OUTPUT POWER (WATTS) JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF hours when device operated Vdc, Pout Avg., 32%. MTTF calculator available http:/www.freescale.com/rf. Select Software Tools/Development Tools/Calculators access MTTF calculators product.
Figure Power Gain versus Output Power
Figure MTTF versus Junction Temperature
CDMA TEST SIGNAL
PROBABILITY 0.01 0.001 0.0001 W-CDMA. ACPR Measured 3.84 Channel Bandwidth Offset. Input Signal 0.01% Probability CCDF Compressed Output Signal Pout Input Signal (dB) -100 -110 -7.2 -5.4 -3.6 -1.8 FREQUENCY (MHz) -ACPR 3.84 Integrated -ACPR 3.84 Integrated 3.84 Channel
PEAK-TO-AVERAGE (dB)
Figure CCDF CDMA 3GPP, Test Model DPCH, Clipping, Single Carrier Test Signal
Figure Single Carrier CDMA Spectrum
MRF7S21080HR3 MRF7S21080HSR3 Device Data Freescale Semiconductor
2040
Zload 2220 2220 2060 Zsource 2060
Vdc, Pout Avg. 2060 2080 2100 2120 2140 2160 2180 2200 2220 Zsource 7.16 j11.074 7.066 j10.796 6.954 j10.526 6.857 j10.260 6.745 j9.980 6.668 j9.728 6.588 j9.462 6.511 j9.203 6.403 j8.892 Zload 4.403 j6.809 4.275 j6.662 4.147 j6.515 4.017 j6.375 3.889 j6.233 3.764 j6.126 3.642 j6.016 3.519 j5.895 3.401 j5.774
Zsource Test circuit impedance measured from gate ground. Zload Test circuit impedance measured from drain ground. Output Matching Network
Input Matching Network
Device Under Test
source
load
Figure Series Equivalent Source Load Impedance
MRF7S21080HR3 MRF7S21080HSR3 Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M-1994. CONTROLLING DIMENSION: INCH. DELETED DIMENSION MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. INCHES 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 0.010 0.015 MILLIMETERS 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 0.254 0.381
(FLANGE)
(INSULATOR)
(LID)
(LID)
(INSULATOR)
(FLANGE)
SEATING PLANE
STYLE DRAIN GATE SOURCE
CASE ISSUE MRF7S21080HR3
(FLANGE)
(LID)
(FLANGE)
NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M-1994. CONTROLLING DIMENSION: INCH. DELETED DIMENSION MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. INCHES 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 0.040 0.030 0.005 0.010 0.015 MILLIMETERS 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 1.02 0.76 0.127 0.254 0.381
(LID)
(LID)
(INSULATOR)
(INSULATOR)
SEATING PLANE
(FLANGE)
STYLE DRAIN GATE SOURCE
CASE 465A ISSUE 780S MRF7S21080HSR3
MRF7S21080HR3 MRF7S21080HSR3 Device Data Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer following documents your design process. Application Notes AN1955: Thermal Measurement Methodology Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances LDMOS Devices
REVISION HISTORY
following table summarizes revisions this document.
Revision Date Nov. 2007 Initial Release Data Sheet Description
MRF7S21080HR3 MRF7S21080HSR3 Device Data Freescale Semiconductor
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MRF7S21080HR3 MRF7S21080HSR3
Rev. 11/2007 Document Number: MRF7S21080H
Device Data Freescale Semiconductor
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