VEC2812 VEC2812 Features MOSFET N-Channel Silicon MOSFE

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VEC2812 VEC2812 Features MOSFET N-Channel Silicon MOSFE

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Ordering number ENA0392
VEC2812
VEC2812
Features
MOSFET N-Channel Silicon MOSFET Schottky Barrier Diode
General-Purpose Switching Device Applications
converter. Composite type with N-channel sillicon MOSFET schottky barrier diode contained package facilitating high-density mounting. [MOSFET] ON-resistance. 1.8V drive. [SBD] Short reverse recovery time. forward voltage.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IFSM Tstg 50Hz sine wave, cycle +125 +125 VDSS VGSS Tstg PW10µs, duty cycle1% Mounted ceramic board (900mm2!0.8mm) 1unit +125 Symbol Conditions Ratings Unit
Marking
SANYO Semiconductor products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest before usingany SANYO Semiconductor products described contained herein such applications. SANYO Semiconductor assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor products described contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N0806PE TC-00000280 A0392-1/6
VEC2812
Electrical Characteristics Ta=25°C
Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time IR=500µA IF=500mA IF=1A VR=15V VR=10V, f=1MHz IF=IR=100mA, specified Test Circuit. 0.35 0.39 0.45 V(BR)DSS IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) td(off) ID=1mA, VGS=0V VDS=20V, VGS=0V VGSS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=4V ID=0.5A, VGS=2.5V ID=0.1A, VGS=1.8V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. VDS=10V, VGS=10V, ID=1.5A VDS=10V, VGS=10V, ID=1.5A VDS=10V, VGS=10V, ID=1.5A IS=1.5A, VGS=0V Symbol Conditions Ratings Unit
Package Dimensions
unit (typ) 7012-004
Electrical Connection
0.15
0.25
0.65
Anode Contact Source Gate Drain Drain Cathode Cathode
view
0.25
0.75
Anode Contact Source Gate Drain Drain Cathode Cathode SANYO VEC8
0.07
A0392-2/6
VEC2812
Switching Time Test Circuit
[MOSFET]
Test Circuit
[SBD]
VDD=10V
Duty10%
100mA 10mA
PW=10µs D.C.1%
10µs
VEC2812
3.0V
[MOSFET]
VDS=10V
100mA
ID=1A RL=10 VOUT
[MOSFET]
Drain Current,
4.0V
Drain Current,
6.0V
10.0
VGS=1.0V
25°C
IT02902 IT11826
Drain-to-Source Voltage,
IT02901
RDS(on)
Gate-to-Source Voltage,
RDS(on)
Ta=25°C
Static Drain-to-Source On-State Resistance, RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
IT02985
1.0A ID=0.5A
0.5A
=2.5
=4.0V
Gate-to-Source Voltage,
Ambient Temperature,
A0392-3/6
VEC2812
0.01 0.001 0.01
[MOSFET] VDS=10V
Forward Transfer Admittance,
0.01
[MOSFET] VGS=0V
Source Current,
Drain Current,
IT02905
Time
[MOSFET]
1000
IT02906 Diode Forward Voltage, Ciss, Coss, Crss [MOSFET]
Switching Time, Time
VDD=10V VGS=4V
Ciss, Coss, Crss
f=1MHz
td(off)
td(on)
Ciss
Coss
Crss
IT02907
Drain Current,
[MOSFET]
Gate-to-Source Voltage,
VDS=10V ID=1.5A
Drain Current,
Drain-to-Source Voltage, IT02908 [MOSFET]
IDP=6A
10µs
IT07692
ID=1.5A
Operation this area limited RDS(on). Ta=25°C Single pulse Mounted ceramic board (900mm2!0.8mm) 1unit
0.01 0.01
Total Gate Charge,
Drain-to-Source Voltage,
IT09925
[MOSFET]
Allowable Power Dissipation,
Ambient Temperature,
IT09926
A0392-4/6
VEC2812
[SBD]
10000 1000
Ta=125
100°C
75°C
[SBD]
=-25
0.01
0.001 IT07944
Reverse Current,
Forward Current,
50°C
25°C
-25°C
IT07945
Forward Voltage,
Average Forward Power Dissipation, PF(AV)
PF(AV)
Reverse Voltage,
[SBD]
Case Temperature,
(1)Rectangular wave =60° (2)Rectangular wave =120° (3)Rectangular wave =180° (4)Sine wave =180°
[SBD] (1)Rectangular wave =60° (2)Rectangular wave =120° (3)Rectangular wave =180° (4)Sine wave =180°
Rectangular wave
360°
Sine wave
180° 360°
IT08214 IT08216
Average Output Current,
Average Output Current,
[SBD] f=1MHz
Interterminal Capacitance,
Reverse Voltage,
IT07948
A0392-5/6
VEC2812
Note usage Since VEC2812 MOSFET product, please avoid using this device vicinity highly charged objects.
Specifications SANYO Semiconductor products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Semiconductor Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor products (including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must exported without obtaining export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Semiconductor Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. SANYO Semiconductor believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties.
This catalog provides information November, 2006. Specifications information herein subject change without notice.
A0392-6/6

VEC2812 VEC2812 Features MOSFET N-Channel Silicon MOSFE

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