VEC2611 VEC2611 Features N-Channel P-Channel Silicon MO

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VEC2611 VEC2611 Features N-Channel P-Channel Silicon MO

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Ordering number ENA0425
VEC2611
VEC2611
Features
N-Channel P-Channel Silicon MOSFETs
General-Purpose Switching Device Applications
VEC2611 incorporates N-channel MOSFET P-channel MOSFET that feature ON-resistance, thereby enabling high-density mounting. 1.8V drive. Mounting height 0.75mm.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS Tstg PW10µs, duty cycle1% Mounted ceramic board (900mm20.8mm)1unit Mounted ceramic board (900mm20.8mm) Conditions N-channel +150 P-channel -2.6 -10.4 Unit
Electrical Characteristics Ta=25°C
Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance V(BR)DSS IDSS IGSS VGS(off) ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1.5A Symbol Conditions Ratings Unit
Marking
Continued next page.
SANYO Semiconductor Co.,Ltd. products described contained herein are, with regard "standard application", intended general electronics equipment (home appliances, equipment, communication device, office equipment, industrial equipment etc.). products mentioned herein shall intended "special application" (medical equipment whose purpose sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level reliability directly threaten human lives case failure malfunction product cause harm human bodies, shall they grant guarantee thereof. should intend products applications outside standard applications customer considering such and/or outside scope intended standard applications, please consult with prior intended use. there consultation inquiry before intended use, customer shall solely responsible use. Specifications SANYO Semiconductor Co.,Ltd. products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer' products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer' products equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62007PE TC-00000769 A0425-1/6
VEC2611
Continued from preceding page.
Parameter Symbol RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) td(off) V(BR)DSS IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) td(off) Conditions ID=1.5A, VGS=4V ID=1A, VGS=2.5V ID=0.5A, VGS=1.8V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. VDS=10V, VGS=4V, ID=3A VDS=10V, VGS=4V, ID=3A VDS=10V, VGS=4V, ID=3A IS=3A, VGS=0V ID=-1mA, VGS=0V VDS=-12V, VGS=0V VGS=±6.4V, VDS=0V VDS=-6V, ID=-1mA VDS=-6V, ID=-1.3A ID=-1.3A, VGS=-4.5V ID=-0.7A, VGS=-2.5V ID=-0.3A, VGS=-1.8V VDS=-6V, f=1MHz VDS=-6V, f=1MHz VDS=-6V, f=1MHz specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. VDS=-6V, VGS=-4.5V, ID=-2.6A VDS=-6V, VGS=-4.5V, ID=-2.6A VDS=-6V, VGS=-4.5V, ID=-2.6A IS=-2.6A, VGS=0V -0.3 -0.87 -1.5 -1.0 Ratings 0.85 0.85 0.82 Unit
Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage
Package Dimensions
unit (typ) 7012-002
0.25
Electrical Connection
0.15
0.25
0.65
Source1 Gate1 Source2 Gate2 Drain2 Drain2 Drain1 Drain1
view
0.75
Source1 Gate1 Source2 Gate2 Drain2 Drain2 Drain1 Drain1 SANYO VEC8
0.07
A0425-2/6
VEC2611
Switching Time Test Circuit
[N-channel]
ID=1.5A RL=6.67 VOUT VDD=10V -4.5V -1.3A RL=4.6 VOUT
[P-channel]
VDD=
PW=10µs D.C.1%
PW=10µs D.C.1%
VEC2611
VEC2611
10.0V 4.0V
1.8V
[Nch]
-3.0
[Pch]
-2.5
Drain Current,
Drain Current,
-2.0
VGS=1.0V
-1.5
-1.5
-1.0
-0.5
VGS= -1.0V
-0.1 -0.2 -0.3 -0.4 -0.5 IT04325
Drain-to-Source Voltage,
IT03490
Drain-to-Source Voltage,
-3.0
[Nch] VDS=
-2.5
[Pch]
VDS=10V
Drain Current,
Drain Current,
-2.0
-1.5
-25°C
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-0.5
-1.0
-1.6
-1.8
Gate-to-Source Voltage,
IT03491
RDS(on)
Gate-to-Source Voltage,
IT04326
[Nch] Ta=25°C
RDS(on)
[Pch] Ta=25°C
Static Drain-to-Source On-State Resistance, RDS(on)
IT11098
Static Drain-to-Source On-State Resistance, RDS(on)
1.0A 1.5A ID=0.5A
-0.7A -1.3A
Gate-to-Source Voltage,
Gate-to-Source Voltage,
IT11099
A0425-3/6
VEC2611
RDS(on)
[Nch]
Static Drain-to-Source On-State Resistance, RDS(on)
RDS(on)
[Pch]
Static Drain-to-Source On-State Resistance, RDS(on)
0.5A 1.8V =1.0 =2.5 1.5A =4.0V
-0.3A -1.8V -0.7A 2.5V, -1.3A .5V,
Ambient Temperature,
IT11100
Ambient Temperature,
IT11101
VDS=10V
[Nch]
Forward Transfer Admittance,
[Pch] VDS=
Forward Transfer Admittance,
25°C
-0.1 -1.0
0.01
Drain Current,
IT03494
Drain Current,
IT04329
[Nch] VGS=0V
[Pch] VGS=0V
Source Current,
Source Current,
-1.0
75°C
0.01
25°C
-0.1 -0.4
-0.6
-25°C
-0.8
-1.0
-1.2 IT04330
Diode Forward Voltage,
IT03495
Time
Diode Forward Voltage,
[Nch] VDD=10V VGS=4V
Switching Time, Time
Time
[Pch]
VDD= VGS= -4.5V
Switching Time, Time
td(off)
td(on)
td(off)
td(on)
-1.0
Drain Current,
IT03496
-0.1
Drain Current,
IT04331
A0425-4/6
VEC2611
1000
Ciss, Coss, Crss
[Nch] f=1MHz
1000
Ciss, Coss, Crss
[Pch] f=1MHz
Ciss
Ciss, Coss, Crss
Ciss, Coss, Crss
Ciss
Coss
Crss
Coss
Crss
IT04332
Drain-to-Source Voltage,
IT03497
Drain-to-Source Voltage,
-4.5 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5
[Nch]
[Pch]
Gate-to-Source Voltage,
Gate-to-Source Voltage,
VDS=10V ID=3A
VDS= -2.6A
IT04333
Total Gate Charge,
IT03498
Total Gate Charge,
[Nch]
[Pch]
IDP=12A
PW10µs
IDP= -10.4A -2.6A
ID=3A
Drain Current,
Drain Current,
-1.0 -0.1
PW10µs 100µs
Operation this area limited RDS(on).
Operation this area limited RDS(on). Ta=25°C Single pulse Mounted ceramic board (900mm20.8mm) 1unit
-0.1 -1.0
0.01 0.01
Ta=25°C Single pulse Mounted ceramic board (900mm20.8mm) 1unit
-0.01 -0.01
Drain-to-Source Voltage, IT11102 [Nch, Pch]
Drain-to-Source Voltage,
IT11103
Allowable Power Dissipation,
Ambient Temperature,
IT11104
A0425-5/6
VEC2611
Note usage Since VEC2611 MOSFET product, please avoid using this device vicinity highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor Co.,Ltd. products described contained herein. SANYO Semiconductor Co.,Ltd. strives supply high-quality high-reliability products, however, semiconductor products fail malfunction with some probability. possible that these probabilistic failures malfunction could give rise accidents events that could endanger human lives, trouble that could give rise smoke fire, accidents that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor Co.,Ltd. products described contained herein controlled under applicable local export control laws regulations, such products require export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written consent SANYO Semiconductor Co.,Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor Co.,Ltd. product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. Upon using technical information products described herein, neither warranty license shall granted with regard intellectual property rights other rights SANYO Semiconductor Co.,Ltd. third party. SANYO Semiconductor Co.,Ltd. shall liable claim suits with regard third party's intellctual property rights which resulted from technical information products mentioned above.
This catalog provides information June, 2007. Specifications information herein subject change without notice.
A0425-6/6

VEC2611 VEC2611 Features N-Channel P-Channel Silicon MO

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