TND312S ExPD (Excellent Power Device) TND312S Features

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TND312S ExPD (Excellent Power Device) TND312S Features

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Ordering number ENA0417
TND312S
ExPD (Excellent Power Device)
TND312S
Features
General Purpose Driver Sustain Pulse Drive, Motor Drive, Switching Power Supply, Converter Applications
Dual buffer. Monolithic structure (High voltage CMOS process adopted). Withstand voltage assured. Wide range operating voltage 4.5V 25V. Peak outpout current Fast switching time (25ns typical 1000pF load). Fully compatible input CMOS. (VIH=not more than 2.6V, VDD=4.5 25V) Built-in input pull-down resistance.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Supply Voltage Input Voltage Allowable Power Dissipation Junction Temperature Storage Temperature Symbol Tstg Conditions Ratings GND-0.3 VDD+0.3 +150 +150 Unit
Recommended Operating Conditions Ta=25°C
Parameter Operating Supply Voltage Operating Temperature Symbol Topr Conditions Ratings +125 Unit
Electrical Characteristics Characteristics) Ta=25°C, VDD=18V, VIN=5V
Parameter Turn-On Rise Time Turn-Off Fall Time Delay Time Symbol CL=1000pF CL=1000pF CL=1000pF CL=1000pF Conditions Ratings Unit
SANYO Semiconductor products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest before using SANYO Semiconductor products described contained herein such applications. SANYO Semiconductor assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor products described contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D0606IP TB-00001540 A0417-1/5
TND312S
Electrical Characteristics Characteristics) Ta=25°C, VDD=4.5
Parameter Logic Input Voltage Logic Input Voltage Logic Input Bias Current Logic Input Bias Current High Level Output Voltage Level Output Voltage Supply Current Output High Short Circuit Pulsed Current Output Short Circuit Pulsed Current Output Resistance Symbol IIN+ IIN-VOH Isupp IO-ROUT VIN=VDD=25V VIN=0V IO=0A IO=0A VDD=10V, VIN=3V, (both inputs) VDD=10V, VIN=0V, (both inputs) VDD=18V, PW10µs, VOUT=0V VDD=18V, PW10µs, VOUT=18V VDD=18V, Iload=10mA, VOUT="H" VDD=18V, Iload=10mA, VOUT="L" VDD-0.1 Conditions Ratings Unit
Package Dimensions
unit (typ) 7005-007
0.43
SANYO SOP8
0.595
1.27
Block Diagram
A0417-2/5
TND312S
Switching Time Measuring Circuit
VDD=18V
4.7µF
0.1µF
TND312S
INPUT OUTPUT 1000pF OUTPUT 1000pF
INPUT
INPUT RISE FALL TIMES=5ns +0.4V +18V NONINVERTING OUTPUT
INPUT
VDD=18V VIN=5V CL=1000pF
VIN=5V CL=1000pF
Turn-On Rise Time,
Turn-On Rise Time,
IT03751
Case Temperature,
IT03750
VDD=18V VIN=5V CL=1000pF
Turn-Off Fall Time,
Supply Voltage,
VIN=5V CL=1000pF
Turn-Off Fall Time,
IT03753
Case Temperature,
IT03752
Supply Voltage,
A0417-3/5
TND312S
VDD=18V VIN=5V CL=1000pF
Delay Time,
VIN=5V CL=1000pF
Delay Time,
IT03762
Case Temperature,
IT03761
VDD=18V VIN=5V CL=1000pF
Delay Time,
Supply Voltage,
VIN=5V CL=1000pF
Delay Time,
IT03757
Case Temperature,
IT03756
IO(+)
VDD=18V
Output "Low" Short Circuit Pulsed Current, IO(-)
Supply Voltage,
IO(-)
VDD=18V
Output "High" Short Circuit Pulsed Current, IO(+)
Case Temperature,
IT03758 0.40
Case Temperature,
IT03759
IO(±)
Allowable Power Dissipation,
VIN=5V CL=10µF
0.35 0.30 0.25 0.20 0.15 0.10 0.05
Output High/Low Short Circuit Pulsed Current, IO(±)
IT11081
Supply Voltage,
Ambient Temperature,
IT03760
A0417-4/5
TND312S
Specifications SANYO Semiconductor products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Semiconductor Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor products (including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must exported without obtaining export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Semiconductor Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. SANYO Semiconductor believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties.
This catalog provides information December, 2006. Specifications information herein subject change without notice.
A0417-5/5

TND312S ExPD (Excellent Power Device) TND312S Features

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