AO4435 uses advanced trench technology provide excellent RDS(ON), ultr

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AO4435 uses advanced trench technology provide excellent RDS(ON), ultr

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AO4435 P-Channel Enhancement Mode Field Effect Transistor
AO4435 uses advanced trench technology provide excellent RDS(ON), ultra-low gate charge with gate rating. This device suitable load switch applications. Standard Product AO4435 Pb-free (meets ROHS Sony specifications).
-30V -10A (VGS -10V) RDS(ON) (VGS -10V) RDS(ON) (VGS -5V)
SOIC-8 View
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation
Units
TA=25°C TA=70°C TA=25°C TA=70°C TSTG
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
Symbol
Steady State Steady State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO4435
Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current Static Drain-Source On-Resistance -5V, Forward Transconductance -5V, -10A Diode Forward Voltage -1A,VGS Maximum Body-Diode Continuous Current Conditions -250µA, -30V, 55°C ±25V -250µA -10V, -10V, -10A TJ=125°C -1.7 -0.74 -3.5 1130 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-10A VGS=-10V, VDS=-15V, RL=1.5, RGEN=3 IF=-10A, dI/dt=100A/µs 1400 -2.3 ±100 Units
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge tD(on) tD(off) Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-10A, dI/dt=100A/µs
value measured with device mounted FR-4 board with 2oz. Copper, still environment with 25°C. value given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures obtained using pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with A=25°C. curve provides single pulse rating. current rating based thermal resistance rating. ratings based frequency duty cycles keep j=25C. Rev0: Aug. 2007 THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO4435
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
-10V -ID(A) VDS=
-4.5V VGS=
125°C 25°C
-VDS (Volts) Figure On-Region Characteristics Normalized On-Resistance VGS=-5V
-VGS(Volts) Figure Transfer Characteristics Temperature (°C) Figure On-Resistance Junction Temperature 1E+01 1E+00 1E-01 125°C VGS=-5V ID=-5A VGS=-10V ID=-10A
RDS(ON)
VGS=-10V
IF=-6.5A, dI/dt=100A/µs
Figure On-Resistance Drain Current Gate Voltage RDS(ON) 125°C
ID=-10A
1E-02
25°C 1E-03 THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING 1E-04 SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, 1E-05 25°C FUNCTIONS RELIABILITY WITHOUT NOTICE. -VGS (Volts) Figure On-Resistance Gate-Source Voltage 1E-06 -VSD (Volts) Figure Body-Diode Characteristics
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO4435
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
-VGS (Volts) (nC) Figure Gate-Charge Characteristics VDS=-15V ID=-10A 2000
Capacitance (pF)
1500
Ciss
1000 Coss Crss
-VDS (Volts) Figure Capacitance Characteristics
1000 RDS(ON) limited (Amps) 0.01 TJ(Max)=150°C TA=25°C 10µs
1000
TJ(Max)=150°C TA=25°C
10ms 100ms
Power
100µs
IF=-6.5A, dI/dt=100A/µs
-VDS (Volts)
0.00001
Figure Maximum Forward Biased Safe Operating Area (Note
1000 Pulse Width Figure Single Pulse Power Rating Junctionto-Ambient (Note
0.001
Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=75°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, 0.01 FUNCTIONS RELIABILITY WITHOUT NOTICE. Single Pulse 0.001 0.00001
0.0001
0.001
0.01
1000
Pulse Width Figure Normalized Maximum Transient Thermal Impedance(Note
Alpha Omega Semiconductor, Ltd.
www.aosmd.com

AO4435 uses advanced trench technology provide excellent RDS(ON), ultr

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