SCH2811 SCH2811 Features MOSFET P-Channel Silicon MOSFE

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SCH2811 SCH2811 Features MOSFET P-Channel Silicon MOSFE

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Ordering number ENA0440
SCH2811
SCH2811
Features
MOSFET P-Channel Silicon MOSFET Schottky Barrier Diode
General-Purpose Switching Device Applications
Composite type with P-channel sillicon MOSFET Schottky barrier diode contained package facilitating high-density mounting. [MOSFET] ON-resistance. Ultrahigh-speed switching. drive. [SBD] Short reverse recovery time. forward voltage.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IFSM Tstg 50Hz sine wave, cycle +125 +125 VDSS VGSS Tstg PW10µs, duty cycle1% Mounted ceramic board (900mm2!0.8mm) 1unit -1.0 -4.0 +125 Symbol Conditions Ratings Unit
Marking
SANYO Semiconductor products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest before usingany SANYO Semiconductor products described contained herein such applications. SANYO Semiconductor assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor products described contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82306 61506PE TB-00002321 A0440-1/6
SCH2811
Electrical Characteristics Ta=25°C
Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time IR=0.5mA IF=0.5A VR=15V VR=10V, f=1MHz IF=IR=100mA, specified Test Circuit. 0.42 0.48 V(BR)DSS IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) td(off) ID=-1mA, VGS=0V VDS=-30V, VGS=0V VGS=±16V, VDS=0V VDS=-10V, ID=-1mA VDS=-10V, ID=-0.5A ID=-0.5A, VGS=-10V ID=-0.3A, VGS=-4V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. VDS=-10V, VGS=-10V, ID=-1.0A VDS=-10V, VGS=-10V, ID=-1.0A VDS=-10V, VGS=-10V, ID=-1.0A IS=-1.0A, VGS=0V -1.2 0.57 0.95 12.5 12.2 0.48 0.45 -0.91 -1.5 -2.6 Symbol Conditions Ratings Unit
Package Dimensions
unit 7028-003
Electrical Connection
0.05
Gate Source Anode Cathode Drain Drain
view
0.05
0.56
Gate Source Anode Cathode Drain Drain SANYO SCH6
0.25
A0440-2/6
SCH2811
Switching Time Test Circuit
[MOSFET]
-10V -0.6A RL=25 VDD= -15V
Test Circuit
[SBD] Duty10% 100mA 10mA
SCH2811
PW=10µs D.C.1%
VOUT
10µs
-1.2
[MOSFET]
-2.0 -1.8 -1.6
VDS= -10V
100mA
[MOSFET]
-1.5
-1.0
Drain Current,
Drain Current,
-0.8
-1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2
-3.0V
-0.6
-0.4
-0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0
-0.5 -1.0 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5
1200
Drain-to-Source Voltage, IT07278 RDS(on) [MOSFET]
Ta=25°C
1200
Gate-to-Source Voltage, IT07280 RDS(on) [MOSFET]
Static Drain-to-Source On-State Resistance, RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
1000
1000
-0.2
-500mA
-300
-300mA
-500
VGS= -2.5V
-10V
Gate-to-Source Voltage,
IT11174
Ambient Temperature,
IT11175
A0440-3/6
SCH2811
[MOSFET] VDS= -10V
-1.0
[MOSFET] VGS=0V
Forward Transfer Admittance,
-0.5 -0.6
-0.1
-0.01
-0.1
-1.0
-0.01 -0.4
-0.7
-25°
-0.8 -0.9
Source Current,
-1.0
-1.1
-1.2
Drain Current,
IT07286
Time
[MOSFET] VDD= -15V VGS= -10V
Ciss, Coss, Crss
Diode Forward Voltage, IT07288 Ciss, Coss, Crss [MOSFET] f=1MHz
Switching Time, Time
Ciss
td(on)
-0.01
td(off)
Coss Crss
-0.1 -1.0
Drain Current,
IT07290
[MOSFET]
Gate-to-Source Voltage,
VDS= -10V -1.0A
Drain Current,
-1.0 -0.1
Drain-to-Source Voltage, IT07292 [MOSFET]
IDP=
10µs
IT11176
Operation this area limited RDS(on).
-0.01 -0.01
Ta=25°C Single pulse Mounted ceramic board (900mm2!0.8mm) 1unit
-0.1 -1.0
Total Gate Charge,
Drain-to-Source Voltage,
IT11177
[MOSFET]
Allowable Power Dissipation,
Ambient Temperature,
IT11178
A0440-4/6
SCH2811
[SBD]
100000
100°C
[SBD]
Reverse Current,
Forward Current,
10000 1000
Ta=12
75°C
0.01 IT07927
50°C
25°C
75°C
IT07928
Forward Voltage,
Average Forward Power Dissipation, PF(AV)
0.35
PF(AV)
Reverse Voltage,
[SBD]
[SBD]
Rectangular wave
360°
f=1MHz
Interterminal Capacitance,
0.30
0.25
Sine wave
0.20 180° 0.15 360°
0.10
0.05
Rectangular wave =60° Rectangular wave =120° Rectangular wave =180° Sine wave =180°
Average Output Current,
IT08187
IFSM
Reverse Voltage,
IT07891
[SBD]
Surge Forward Current, IFSM(Peak)
Current waveform 50Hz sine wave
20ms
0.01
Time,
ID00338
A0440-5/6
SCH2811
Note usage Since SCH2811 MOSFET product, please avoid using this device vicinity highly charged objects.
Specifications SANYO Semiconductor products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Semiconductor Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor products (including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must exported without obtaining export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Semiconductor Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. SANYO Semiconductor believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties.
This catalog provides information June, 2006. Specifications information herein subject change without notice.
A0440-6/6

SCH2811 SCH2811 Features MOSFET P-Channel Silicon MOSFE

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