SCH2809 SCH2809 Features MOSFET P-Channel Silicon MOSFE

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SCH2809 SCH2809 Features MOSFET P-Channel Silicon MOSFE

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Ordering number ENA0446
SCH2809
SCH2809
Features
MOSFET P-Channel Silicon MOSFET Schottky Barrier Diode
General-Purpose Switching Device Applications
Composite type with P-channel sillicon MOSFET (SCH1305) Schottky barrier diode (SBS018) contained package facilitating high-density mounting. [MOSFET] ON-resistance. Ultrahigh-speed switching. 1.8V drive. [SBD] Short reverse recovery time. forward voltage.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IFSM Tstg 50Hz sine wave, cycle +125 +125 VDSS VGSS Tstg PW10µs, duty cycle1% Mounted ceramic board (900mm2!0.8mm) 1unit -1.2 -4.8 +125 Symbol Conditions Ratings Unit
Marking
SANYO Semiconductor products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest before usingany SANYO Semiconductor products described contained herein such applications. SANYO Semiconductor assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor products described contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82306 62006PE TB-00002323 A0446-1/6
SCH2809
Electrical Characteristics Ta=25°C
Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time IR=0.5mA IF=0.5A VR=6V VR=10V, f=1MHz IF=IR=100mA, specified Test Circuit. 0.46 V(BR)DSS IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) td(off) ID=-1mA, VGS=0V VDS=-12V, VGS=0V VGS=±8V, VDS=0V VDS=-6V, ID=-1mA VDS=-6V, ID=-0.8A ID=-0.6A, VGS=-4.5V ID=-0.3A, VGS=-2.5V ID=-0.1A, VGS=-1.8V VDS=-6V, f=1MHz VDS=-6V, f=1MHz VDS=-6V, f=1MHz specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. VDS=-6V, VGS=-4.5V, ID=-1.2A VDS=-6V, VGS=-4.5V, ID=-1.2A VDS=-6V, VGS=-4.5V, ID=-1.2A IS=-1.2A, VGS=0V -0.3 1.08 0.25 0.65 -0.92 -1.5 -1.0 Symbol Conditions Ratings Unit
Package Dimensions
unit 7028-003
Electrical Connection
0.05
Gate Source Anode Cathode Drain Drain
view
0.56
0.05
Gate Source Anode Cathode Drain Drain SANYO SCH6
0.25
A0446-2/6
SCH2809
Switching Time Test Circuit
[MOSFET]
-4.5V -0.8A RL=7.5 VDD=
Test Circuit
[SBD] Duty10% 100mA 10mA
SCH2809
PW=10µs D.C.1%
VOUT
10µs
-1.2
Drain Current,
-0.9
-1.8
Drain Current,
-1.5
-1.5V
-0.6
-1.0
-0.3
VGS= -1.0V
-0.1 -0.2 -0.3 -0.4 -0.5 -0.5 -1.0
-0.5
-1.5
-3.0 2.5V
75°C
-2.0
-1.5
[MOSFET]
-2.0
100mA
[MOSFET] VDS=
-2.5
-3.0
Drain-to-Source Voltage, IT07144 [MOSFET] RDS(on) Ta=25°C
Gate-to-Source Voltage, IT04354 [MOSFET] RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
-0.6A
-0.4A
-2.5V .3A, -4.5V -0.6
Gate-to-Source Voltage,
IT07142
Ambient Temperature,
IT07143
A0446-3/6
SCH2809
[MOSFET] VDS=
[MOSFET] VGS=0V
Forward Transfer Admittance,
Source Current,
-1.0
Ta=7 25°C
-0.6
-0.01
-0.1
-1.0
-0.1 -0.4
-0.8
-25°C
-1.0
-1.2
-1.4
Drain Current,
IT04357
Time
[MOSFET]
Diode Forward Voltage, IT04358 Ciss, Coss, Crss [MOSFET] f=1MHz
VDD= VGS= -4.5V
Ciss, Coss, Crss
Switching Time, Time
td(off)
Ciss
td(on)
-0.1
Coss
Crss
-1.0
Drain Current,
-4.5 -4.0
IT04359
VDS= -1.2A
[MOSFET]
-1.0 -0.1
IT04360 Drain-to-Source Voltage, [MOSFET]
IDP= -4.8A
Gate-to-Source Voltage,
10µs
-3.5
Drain Current,
-1.2A
-3.0 -2.5 -2.0 -1.5 -1.0 -0.5 IT04361
Operation this area limited RDS(on).
-0.01 -0.01
Ta=25°C Single pulse Mounted ceramic board (900mm2!0.8mm) 1unit
-0.1 -1.0 IT11233
Total Gate Charge,
Drain-to-Source Voltage,
[MOSFET]
Allowable Power Dissipation,
Ambient Temperature,
IT11234
A0446-4/6
SCH2809
[SBD]
10000
Ta=125°C
[SBD]
100°C
Reverse Current,
Forward Current,
1000
75°C
0.01 IT06804
50°C
25°C
IT06805
Forward Voltage,
Average Forward Power Dissipation, PF(AV)
PF(AV)
Reverse Voltage,
[SBD]
[SBD] f=1MHz
Rectangular wave
180° 360° 360°
Interterminal Capacitance,
Sine wave
Rectangular wave =60° Rectangular wave =120° Rectangular wave =180° Sine wave =180°
Average Output Current,
IT06806
IFSM
Reverse Voltage,
IT06807
[SBD]
Surge Forward Current, IFSM(Peak)
Current waveform 50Hz sine wave
20ms
0.01
Time,
ID00338
A0446-5/6
SCH2809
Note usage Since SCH2809 MOSFET product, please avoid using this device vicinity highly charged objects.
Specifications SANYO Semiconductor products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Semiconductor Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor products (including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must exported without obtaining export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Semiconductor Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. SANYO Semiconductor believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties.
This catalog provides information June, 2006. Specifications information herein subject change without notice.
A0446-6/6

SCH2809 SCH2809 Features MOSFET P-Channel Silicon MOSFE

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