SBE808 SBE808 Applications Schottky Barrier Diode

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SBE808 SBE808 Applications Schottky Barrier Diode

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Ordering number ENA0451
SBE808
SBE808
Applications
Schottky Barrier Diode
15V, Rectifier
High frequency rectification (switching regulators, converters, choppers).
Features
Small switching noise. leakage current high reliability planar structure. Ultrasmall package permitting applied sets small slim.
Specifications
Absolute Maximum Ratings Ta=25°C (Value element)
Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IFSM Tstg 50Hz sine wave, cycle Conditions Ratings +150 +150 Unit
Electrical Characteristics Ta=25°C (Value element)
Parameter Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance Symbol Rth(j-a) IR=0.1mA IF=0.5A IF=1A VR=6V VR=10V, f=1MHz IF=IR=100mA, specified Test Circuit. Mounted ceramic board (600mm2!0.8mm) Conditions Ratings 0.43 0.49 0.48 0.54 Unit
Marking
SANYO Semiconductor products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest before usingany SANYO Semiconductor products described contained herein such applications. SANYO Semiconductor assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor products described contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N0106SB TC-00000264 A0451-1/3
SBE808
Package Dimensions
unit (typ) 7021A-001
0.25 0.15
Electrical Connection
0.02
Anode Contact Anode Cathode Cathode
0.25
0.65
view
0.85
Anode Contact Anode Cathode Cathode SANYO MCPH5
0.07
Test Circuit
Duty10%
100mA 100mA 10mA
10µs
10000 1000
Ta=150°C
0.01
Reverse Current,
Forward Current,
0.01
125°C 100°C
75°C
50°C
25°C
-25°C
0.001 0.0001 IT11243
0.001
Forward Voltage, Average Forward Power Dissipation, PF(AV)
Average Reverse Power Dissipation, PR(AV)
PF(AV)
Reverse Voltage,
1.2E-05
IT11244
PR(AV)
(1)Rectangular wave =60° (2)Rectangular wave =120° (3)Rectangular wave =180° (4)Sine wave =180°
1.0E-05
(1)Rectangular wave =300° (2)Rectangular wave =240° (3)Rectangular wave =180° (4)Sine wave =180°
Rectangular wave
360°
8.0E-06
Rectangular wave
6.0E-06
4.0E-06
Sine wave
180° 360°
Sine wave
180° 360°
360°
2.0E-06
0.0E+00
IT11245
Average Output Current,
Peak Reverse Voltage,
IT11246
A0451-2/3
SBE808
Surge Forward Current, IFSM(Peak)
f=1MHz
IFSM
Current waveform 50Hz sine wave
Interterminal Capacitance,
20ms
0.01
Reverse Voltage,
IT07885
Time,
IT00626
Specifications SANYO Semiconductor products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Semiconductor Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor products (including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must exported without obtaining export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Semiconductor Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. SANYO Semiconductor believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties.
This catalog provides information November, 2006. Specifications information herein subject change without notice.
A0451-3/3

SBE808 SBE808 Applications Schottky Barrier Diode

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