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SB10015M SB10015M Applications Schottky Barrier Diode
Top Searches for this datasheetOrdering number ENA0444 SB10015M SB10015M Applications Schottky Barrier Diode 15V, 1.0A Rectifier High frequency rectification (switching regulators, converters, choppers). Features Small switching noise. leakage current high reliability highly reliable planar structure. Ultrasmall package permitting applied sets small slim (mounting height 0.85mm). Specifications Absolute Maximum Ratings Ta=25°C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IFSM Tstg 50Hz sine wave, cycle Conditions Ratings +150 +150 Unit Electrical Characteristics Ta=25°C Parameter Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Therrmal Resistance Symbol Rth(j-a) IR=0.1mA IF=0.5A IF=1.0A VR=7.5V VR=10V, f=1MHz IF=IR=100mA, specified Test Circuit. Mounted Cu-foiled area 0.72mm2!0.03mm glass epoxy board Conditions Ratings 0.43 0.49 0.48 0.54 Unit Marking SANYO Semiconductor products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest before usingany SANYO Semiconductor products described contained herein such applications. SANYO Semiconductor assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor products described contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N0106SB TC-00000266 A0444-1/3 SB10015M Package Dimensions unit (typ) 7019A-001 0.25 0.15 Electrical Connection 0.02 Anode Contact Cathode view 0.25 0.65 0.85 0.07 Anode Contact Cathode SANYO MCPH3 Test Circuit Duty10% 100mA 100mA 10mA 10µs 10000 1000 Ta=150°C 125°C 100°C 75°C Reverse Current, Forward Current, 0.01 0.001 50°C 25°C -25°C 0.001 75°C -25° 0.01 0.0001 IT11204 Forward Voltage, Average Forward Power Dissipation, PF(AV) Average Reverse Power Dissipation, PR(AV) PF(AV) Reverse Voltage, 1.2E-0.5 IT11205 PR(AV) Rectangular wave 360° 1.0E-0.5 Sine wave 180° 360° 8.0E-0.6 (1)Rectangular wave =300° (2)Rectangular wave =240° (3)Rectangular wave =180° (4)Sine wave =180° Rectangular wave 360° 6.0E-0.6 Sine wave 180° 360° 4.0E-0.6 (1)Rectangular wave =60° (2)Rectangular wave =120° (3)Rectangular wave =180° (4)Sine wave =180° IT11206 2.0E-0.6 0.0E+00 Average Output Current, Peak Reverse Voltage, IT11207 A0444-2/3 SB10015M Interterminal Capacitance, (1)Rectangular wave =60° (2)Rectangular wave =120° (3)Rectangular wave =180° (4)Sine wave =180° *When mounted reliability operaion board, Rth(J-a)=183.67°C/W Case Temperature, Rectangular wave 360° Sine wave 180° 360° IT11208 Average Output Current, IFSM Current waveform 50Hz sine wave 20ms Reverse Voltage, IT10275 Surge Forward Current, IFSM(Peak) 0.01 Time, ID00435 Specifications SANYO Semiconductor products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Semiconductor Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor products (including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must exported without obtaining export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Semiconductor Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. SANYO Semiconductor believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties. This catalog provides information November, 2006. Specifications information herein subject change without notice. A0444-3/3 Other recent searchesVJ0508 - VJ0508 VJ0508 Datasheet VJ0612 - VJ0612 VJ0612 Datasheet MSS6122 - MSS6122 MSS6122 Datasheet HM-6642 - HM-6642 HM-6642 Datasheet GN2470 - GN2470 GN2470 Datasheet SR036 - SR036 SR036 Datasheet SR037 - SR037 SR037 Datasheet GBU6A - GBU6A GBU6A Datasheet GBU6M - GBU6M GBU6M Datasheet EDI88512VA-RP - EDI88512VA-RP EDI88512VA-RP Datasheet AAT3157 - AAT3157 AAT3157 Datasheet
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