SB0503EC SB0503EC Applications Schottky Barrier Diode

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SB0503EC SB0503EC Applications Schottky Barrier Diode

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Ordering number ENA0414
SB0503EC
SB0503EC
Applications
Schottky Barrier Diode
30V, 0.5A Rectifier
High frequency rectification (switching regulators, converters, choppers).
Features
switching noise. leakage current high reliability planar structure. Ultraminiature (1008 size) thin (0.6mm) leadless package.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IFSM Tstg 50Hz sine wave, cycle Conditions Ratings +150 +150 Unit
Electrical Characteristics Ta=25°C
Parameter Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance Symbol Rth(j-a) IR=0.2mA IF=0.5A VR=15V VR=10V, f=1MHz IF=IR=100mA, specified Test Circuit. Mounted Cu-foiled area 0.72mm20.03mm glass epoxy board Conditions Ratings 0.65 Unit
Marking
SANYO Semiconductor products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest before using SANYO Semiconductor products described contained herein such applications. SANYO Semiconductor assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor products described contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2906SB TC-00000343 A0414-1/3
SB0503EC
Package Dimensions
unit (typ) 7035-002
Cathode Mark top)
View Polarity Discriminating Mark
Electrical Connection
Anode
Cathode
*Electorodes bottom
view
Cathode Mark (Top)
Anode Cathode
Anode Cathode SANYO ECSP1008-2
Bottom View
Test Circuit
Duty10%
10mA
10µs
10mA
1000
Ta=150°C 125°C
0.01
Reverse Current,
Forward Current,
100°C
75°C
25°C
50°C
25°C
0.01
0.001
-25°C
0.001 IT11083 IT11082
Forward Voltage,
Reverse Voltage,
A0414-2/3
SB0503EC
Average Forward Power Dissipation, PF(AV)
0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 180° 360°
Rectangular wave
360°
Average Reverse Power Dissipation, PR(AV)
PF(AV)
1.4E-05
PR(AV)
(1)Rectangular wave =300° (2)Rectangular wave =240° (3)Rectangular wave =180° (4)Sine wave =180° Rectangular wave
360°
1.2E-05
1.0E-05
Sine wave
8.0E-06
6.0E-06
Sine wave
180° 360°
4.0E-06
(1)Rectangular wave =60° (2)Rectangular wave =120° (3)Rectangular wave =180° (4)Sine wave =180°
IT10239
2.0E-06
0.0E+00 IT10240
Average Output Current,
Peak Reverse Voltage,
Interterminal Capacitance,
IT11697
Case Temperature,
(1)Rectangular wave =60° (2)Rectangular wave =120° (3)Rectangular wave =180° (4)Sine wave =180°
Rectangular wave
360°
Sine wave
180° 360°
Average Output Current,
Reverse Voltage,
IT10242
Specifications SANYO Semiconductor products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Semiconductor Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor products (including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must exported without obtaining export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Semiconductor Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. SANYO Semiconductor believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties.
This catalog provides information November, 2006. Specifications information herein subject change without notice.
A0414-3/3

SB0503EC SB0503EC Applications Schottky Barrier Diode

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