Smart Photoflash Capacitor Charger with IGBT Driver RT9591 highly

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Smart Photoflash Capacitor Charger with IGBT Driver RT9591 highly

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RT9591
Smart Photoflash Capacitor Charger with IGBT Driver
RT9591 highly integrated photoflash charging solution digital film cameras. targeted applications that either batteries single lithium-ion battery. RT9591 integrates constant current controller charging high voltage photoflash capacitor quickly efficiently, IGBT driver igniting flash tube, voltage detector. Only external components used reduce space cost. RT9591 available VQFN-16L package.
Features
1.8V 6.5V Battery Input Voltage Range Charges Size Photoflash Capacitor Adjustable Input Current Uses Standard Transformers Adjustable Output Voltage Charge Complete Indicator Built-in IGBT Driver IGBT Application Built-in Voltage Detector 16-Lead VQFN Package RoHS Compliant 100% Lead (Pb)-Free
Applications Ordering Information
RT9591 Package Type VQFN-16L (V-Type) Operating Temperature Range Free with Commercial Standard Green (Halogen Free with Commercial Standard)
Digital Still Camera Film Camera Flash Unit Camera Phone Flash
Configurations
(TOP VIEW)
GNDDRV DRVOUT VDRV IMCD VDOUT FBVD
Note RoHS compliant compatible with current requirements IPC/JEDEC J-STD-020. Suitable SnPb Pb-free soldering processes. 100% matte (Sn) plating.
PGND DRVIN CHARGE STAT VBAT
Richtek Pb-free Green products
Marking Information
marking information, contact sales representative directly through Richtek distributor located your area, otherwise visit website detail.
VQFN-16L
Patent Pending DS9591-07 August 2007 www.richtek.com
RT9591
Typical Application Circuit
Delta 86A-3145 1.5M 10uF AO3400
VBAT 1.8V 6.5V
VOUT GSD2004S
COUT 100uF/ 300V
Flash-Tube
150k 0805
VBAT
IMCD
3.3V
FBVD
100k
RT9591
VDOUT
Strobe DRVIN VDRV
150k 0805
DRVOUT GNDDRV
STAT CHARGE PGND
0.1uF
Figure Photoflash Capacitor Charger Application
VBAT 1.8V 6.5V
ASATECH ST-532553A 10uF AO3400
VOUT GSD2004S
COUT 47uF/ 300V
Flash-Tube
150k 0805
VBAT
FBVD
3.3V
100k
RT9591
DRVIN VDRV DRVOUT GNDDRV
Strobe 0.1uF
150k 0805
VDOUT
STAT CHARGE PGND
IMCD
560k
Figure Photoflash Capacitor Charger Application Charging Current
Patent Pending www.richtek.com DS9591-07 August 2007
RT9591
VOUT
VBAT 1.8V 6.5V 1.5M
Delta 86A-3145B 10uF
GSD2004S
AO3400
COUT 100uF/ 300V
Flash-Tube
VBAT
FBVD
IMCD
3.3V
100k
RT9591
DRVIN VDRV DRVOUT
Strobe 0.1uF
VDOUT
STAT CHARGE PGND
GNDDRV
Figure Photoflash Capacitor Charger Application with Center-Tap Transformer
Patent Pending DS9591-07 August 2007 www.richtek.com
RT9591
Function Block Diagram
VBAT
Charging Block Constant Peak Current Control Shot Charging Block Enable CHARGE FBVD 1.0V Reference DRVIN IGBT Driver VDRV DRVOUT GNDDRV Shot Voltage Detector Detector VDOUT Latch Driver PGND
+36mV
IMCD
Chip Enable
Latch
Functional Description
Name PGND Feedback Voltage Pin. Power Ground. Output driving external NMOS Flyback topology. Ground. Power Input RT9591. Charge Enable Pin, charge function executed when CHARGE from CHARGE High. RT9591 gets into Shutdown mode when CHARGE Low. STAT FBVD VDOUT IMCD VDRV Charge Status Output. Open Drain output. When target output voltage reached, N-MOSFET turns off. This needs pull resistor. Voltage Detector Feedback Pin. Voltage Detector Output Pin, Open Drain output. Minimum Current Detection Pin. IGBT Driver Power Pin. Function
DRVOUT IGBT Driver Output Pin. GNDDRV IGBT Driver Ground Pin. DRVIN VBAT IGBT Driver Input Pin. Input Current Setting Pin. Battery Supply Voltage Input Pin. exposed must soldered large connected maximum power dissipation.
Exposed (17)
Patent Pending www.richtek.com DS9591-07 August 2007
STAT
Preliminary Absolute Maximum Ratings
(Note
RT9591
Supply Voltage, VDD, VBAT, VDRV -0.3V -0.3V (VDD 0.3V) DRVOUT -0.3V (VDRV 0.3V) IMCD -0.5V Other Voltage -0.3V Power Dissipation, 25°C VQFN-16L 1.67W Package Thermal Resistance VQFN-16L 3x3, 60°C/W Junction Temperature 150°C Lead Temperature (Soldering, sec.) 260°C Storage Temperature Range -65°C 150°C Susceptibility (Note (Human Body Mode) (Machine Mode) 200V
Electrical Characteristics
(VDD 3.3V, VVDRV 3.3V, 25°C, Unless Otherwise specification)
Parameter Operating Voltage UVLO Rising UVLO Hysteresis VBAT Voltage Rising VBAT UVLO Hysteresis Voltage
Symbol
Test Conditions
-1.6 0.98 0.01 0.01
-1.81
Units
VBAT(MIN)
-190
1.8V< 6.5V
0.96 3.3V 3.3V 3.3V
Line Regulation
Switch-Off Current Switch-Off Current Shutdown Current IVDD+IVBAT Resistance Resistance STAT Resistance
IVDD_SW_OFF 1.1V IVBAT_SW_OFF 1.1V IOFF Charge 4.5V
Minimum Current Secondary Side IIMCD
continued
Patent Pending DS9591-07 August 2007 www.richtek.com
RT9591
Parameter Charge Input High Threshold Charge Input Threshold Minimum Time IGBT Driver IGBT Driver Supply Voltage DRVIN Input High Threshold DRVIN Input Threshold DRVOUT Resistance VVDRV DRVOUT Resistance Propagation Delay (Rising) Propagation Delay (Falling) Voltage Detector Voltage Detector Trip (Falling) VDOUT Resistance VFBVD VVDRV Symbol
Test Conditions -0.4 VBAT 1.8V 6.5V 1.8V 6.5V -430 Units
-0.4 VVDRV 3.3V VVDRV 3.3V VBAT 1.8V 6.5V 1.8V 6.5V VVDRV 6.5V(Note FBVD Falling 3.3V
-1.0
0.96
0.99
1.02
Note Stresses listed above "Absolute Maximum Ratings" cause permanent damage device. These stress ratings. Functional operation device these other conditions beyond those indicated operational sections specifications implied. Exposure absolute maximum rating conditions extended periods remain possibility affect device reliability. Note Devices sensitive. Handling precaution recommended. Note VDRV IGBT gate driving power. Therefore, setting VDRV voltage must consider IGBT gate threshold voltage, driving capability.
Patent Pending www.richtek.com DS9591-07 August 2007
Preliminary Typical Operating Characteristics
10.0
RT9591
Charge Time VBAT (47uF COUT)
Charge Time VBAT (100uF COUT)
VOUT 300V COUT 100uF 3.3V
VOUT 300V COUT 47uF 3.3V
Charge Time
Charge Time
IPK-PRI
IPK-PRI
IPK-PRI 1.5A
IPK-PRI 1.5A
VBAT
VBAT
Efficiency Output Voltage
Secondary Minimum Current Temperature
11.0
2.5V
3.3V
Secondary Minimum Current (mA)
IPK-PRI 1.5A COUT 100uF VBAT
10.5 10.0
Efficiency
1.8V
Output Voltage
Temperature (°C)
Output Voltage Temperature
Output Voltage Input Voltage
VBAT 25°C VOUT 300V
Output Voltage
Output Voltage
Temperature (°C)
Patent Pending DS9591-07 August 2007
Input Voltage
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(1A/Div) (10V/Div)
VOUT 100V VOUT 300V
RT9591
Output Voltage (100V/Div)
STAT (2V/Div)
(1A/Div) (10V/Div)
Time (1us/Div)
Time (1us/Div)
STAT Output Voltage
Patent Pending
drain-to-source voltage NMOS. (50mA/Div)
VOUT 300V
Primary Current
drain-to-source voltage NMOS.
Primary Current
Time (1s/Div)
(10V/Div) (50mA/Div) (10V/Div)
VOUT 100V
Secondary Current
Secondary Current
Time (1us/Div)
Time (1us/Div)
DS9591-07 August 2007
drain-to-source voltage NMOS.
drain-to-source voltage NMOS.
Preliminary Application Information
RT9591 integrates constant peak current controller charging photoflash capacitor, IGBT driver igniting flash tube, voltage detector with open drain output provide cost effective photoflash solution. photoflash capacitor charger uses constant primary peak current constant secondary valley current control efficiently charge photoflash capacitor. Pulling CHARGE high initiates charging cycle. During time, primary current ramps linearly according VBAT primary inductance. resistor connecting determines time primary NMOS consequently primary peak current. During time, energy stored flyback transformer boosted output capacitor. secondary current decreases linearly rate determined secondary inductance output voltage (neglecting voltage drop diode). secondary current monitored IMCD pin. When secondary current drops below 10mA, time starts again. charging cycle repeats itself charges output voltage. output voltage sensed voltage divider connecting anode rectifying diode. When output voltage reaches desired voltage resistor divider, detector will terminate charging cycle, disable charging block pull high STAT pin. voltage sensing path when charging completed minimize output voltage decay. Both CHARGE STAT pins easily interfaced microprocessor digital system. Transformer flyback transformer should appropriately designed ensure effective efficient operation. Turns Ratio turns ratio transformer should high enough that absolute maximum voltage rating NMOS drain source voltage exceeded. Choose minimum turns ratio according following formula: VOUT: Target Output Voltage
RT9591
VDS(MAX): Maximum drain source voltage NMOS Primary Inductance Each switching cycle, energy transferred output capacitor proportional primary inductance constant primary current. higher primary inductance higher charging efficiency will Besides, RT9591 360ns minimum-off time correct current voltage sensing. ensure charger operating continuous conduction mode, primary inductance should high enough according following formula:
LPRI VOUT
VOUT: Target Output Voltage Transformer turns ratio IPK-PRI Primary peak current 10-9 maximum value minimum-off time. Leakage Inductance Parasitic Capacitance leakage inductance transformer results first spike voltage when NMOS turns shown Figure spike voltage proportional leakage inductance. spike voltage must exceed dynamic rating NMOS drain source voltage. Wellcoupling winding design decreases leakage inductance. However, well-coupling winding design usually results large parasitic capacitance between windings. parasitic capacitance consequently causes initial current swing when NMOS turns shown Figure Trade necessary between leakage inductance parasitic capacitance.
N(MIN)
VOUT VDS(MAX) VBAT
Patent Pending
DS9591-07 August 2007
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RT9591
Spike voltage
Spike Voltage @Switching
peak reverse voltage diode approximately: VPK-R VOUT VBAT) peak current diode equals primary peak current divide transformer turn ratio following equation: IPK-SEC IPK-PRI/N Note: transformer turns ratio.
(10V/Div)
(1A/Div)
NMOS NMOS switching component flyback converter. Select adequate drain source voltage NMOS turn drain current very important. RT9591 typical application circuit, VOUT 300V, VBAT 6.5V, transformer turn ratio VDS(MIN) 300/15 26.5V. NMOS minimum drain source voltage should greater than 26.5V.
Time (250ns/Div)
Figure
Swing Current @Switching
(20V/Div)
Swing Current
addition, make sure that higher than VGS(th) (Gate threshold voltage) sufficiently turn MOSFET. Capacitor ceramic capacitor 10uF/10V recommended input capacitor well decouple switching current. Figure Figure compare input current waveforms with different input capacitors.
(1A/Div)
Time (1us/Div)
Figure
Input Average Current Output Voltage
Transformer Secondary Capacitance capacitance secondary severely affect efficiency. small secondary capacitance multiplied when reflected primary side. This capacitance forms resonant circuit with primary leakage inductance transformer. Therefore, both primary leakage inductance secondary side capacitance should minimized. Rectifying Diode rectifying diode should with short reverse recovery time (small parasitic capacitance). Large parasitic capacitance increases switching loss lowers charging efficiency. addition, peak reverse voltage peak current diode should sufficient.
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Input Average Current (500mA/Div)
VBAT 3.3V 4.7uF
Output Voltage (100V/Div)
Time (1s/Div)
Figuer
Patent Pending DS9591-07 August 2007
Input Average Current Output Voltage
Input Average Current (500mA/Div)
VBAT 3.3V 10uF
RT9591
Adjustable Output Voltage RT9591 senses output voltage voltage divider connecting anode rectifying diode during time. This eliminates power loss voltage-sensing circuit when charging completed. (R1+R2) ratio determines output voltage shown application circuit Figure1. feedback reference voltage 0.98V. VOUT 300V, Figure Photoflash Capacitor Charger Application according following equation:
VOUT
Output Voltage (100V/Div)
Time (1s/Div)
Figure Adjustable Input Current RT9591 simply adjusts peak primary current resistor connecting shown Function Block Diagram. paralleled with internal resistor determines time primary NMOS. During time, primary current ramps linearly with slope VBAT/LPRI. Consequently, current setting resister (RCS) could calculated (IPK LPRI
recommend used 150K reducing parasitic capacitance coupling effect pin. MUST greater than 0805 size resister enduring secondary Lower Charging Current Battery Voltage RT9591 integrates voltage detector with open drain output. This voltage detector specially designed lowering peak primary current minimizing impact battery voltage VBAT condition shown Figure voltage detector senses VBAT through resister divider compares with internal reference voltage. When sensed voltage lower than reference voltage, VDOUT goes changes resistance connecting time. example, equal 1.5M R7equal VDOUT change status form open ground when VBAT voltage under 2.5V. current setting resister different resistance different input current when VBAT voltage under detector voltage. Figure shows lower charging current waveform. When VBAT voltage under 2.5V, input average current become approximately 600mA 460mA.
Where IPK-PRI primary peak current turns ratio transformer. Users could select appropriate according battery capability required charging time. Minimum IPK-PRI Limitation
setting must
VOUT LPRI
where 10-9 maximum value minimum time. lower IPK-PRI setting limitation required, change transformer incease LPRI product.
Patent Pending DS9591-07 August 2007 www.richtek.com
RT9591
10uF
1.5M
150k
100uF/3
FBVD
10uF 100k
VBAT
RT9591
VDOUT STAT CHARGE PGND
DRVOUT GNDDRV
IMCD
150k
DRVIN VDRV
Figure Lower Charging Current Application Circuit
Lower Charging Current
(1V/Div) Under 2.5V
(200mA/Div)
VBAT Input Average Current Output Voltage
DRVIN
Change input current
(100V/Div)
Figure IGBT Driver Input Signal
Time (1s/Div)
Figure IGBT Driver Input Signal slew rate IGBT driver input DRVIN should higher than 2.5V/s normally triggering IGBT shown Figure Layout Guide 1.Both primary secondary power paths should short possible. 2.Keep node area small away from nodes with voltage switching reduce parasitic capacitance coupling effect. 3.The NMOS ground feedback ground should connect VBAT ground reduce switching noise.
Patent Pending www.richtek.com DS9591-07 August 2007
Preliminary Outline Dimension
DETAIL
RT9591
DETAIL Mark Options Note configuration identifier optional, must located within zone indicated.
Symbol
Dimensions Millimeters 0.800 0.000 0.175 0.180 2.950 1.300 2.950 1.300 0.500 0.350 0.450 1.000 0.050 0.250 0.300 3.050 1.750 3.050 1.750
Dimensions Inches 0.031 0.000 0.007 0.007 0.116 0.051 0.116 0.051 0.020 0.014 0.018 0.039 0.002 0.010 0.012 0.120 0.069 0.120 0.069
V-Type Package
Richtek Technology Corporation
Headquarter Taiyuen Street, Chupei City Hsinchu, Taiwan, R.O.C. Tel: (8863)5526789 Fax: (8863)5526611
Richtek Technology Corporation
Taipei Office (Marketing) 137, Lane 235, Paochiao Road, Hsintien City Taipei County, Taiwan, R.O.C. Tel: (8862)89191466 Fax: (8862)89191465 Email: marketing@richtek.com
DS9591-07 August 2007
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Smart Photoflash Capacitor Charger with IGBT Driver RT9591 highly

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