4ch. Read/Write Amplifier three terminal Head Hard Disk Drive Des

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4ch. Read/Write Amplifier three terminal Head Hard Disk Drive Des

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CXA3171N
4ch. Read/Write Amplifier three terminal Head Hard Disk Drive
Description CXA3171N Read/Write Amplifier special three terminal head hard disk drive designed handle channel heads. Features Operate single power supply power consumption Read Write Designed special three terminal heads Read amplifier emitter follower output featuring times gain (typ). Differential input capacitance Read (typ) Input noise 0.46nV (typ) Differential Head voltage swing Vp-p (typ) Differential P-ECL write data input Built-in write unsafe detection circuit. Built-in Servo write function (2/4 ch). Built-in protection circuit short head GND. Read data outputs high impedance write mode. Built-in supply voltage monitor circuit prohibits incorrect write during power abnormal voltage. Self switching damping resistance (RD=420 Function Read, Write Write unsafe detection HDD, power supply ON/OFF detection. Structure Bipolar silicon monolithic SSOP (Plastic)
Absolute Maximum Ratings (Ta=25 Supply voltage Write current mAo-p Operating temperature Topr Storage temperature Tstg +150 Allowable power dissipation WUS/SE input current ISEH
Recommended Operating Conditions Supply voltage V±10 Write current mAo-p
Sony reserves right change products specifications without prior notice. This information does convey license implication otherwise under patents other right. Application circuits shown, any, typical examples illustrating operation devices. Sony cannot assume responsibility problems arising these circuits.
E97305A7X-TE
CXA3171N
MODE CONTROL
DRIVER
WRITE CURRENT SOURCE
DRIVER
HEAD SELECT
DRIVER
DRIVER
WRITE UNSAFE DETECTOR POWER ON/OFF DETECTOR PROTECTOR
WUS/SE
CXA3171N
Description Symbol
Equivalent circuit
Description
Head. channels provided.
WUS/SE
Write unsafe detection output Servo Enable signal input.
Differential P-ECL write data input.
power supply.
CXA3171N
Symbol
Equivalent circuit
Description
2.1V HS0:R=78K, HS1:R=100K
Head select signal input. Selects heads according Table
180k
Read/Write signal input "High" Read, "Low" Write.
2.1V
Read Amplifier output.
setting resistor write current value connected between this GND.
Electrical Characteristics conditions Measurement conditions Test point Test point -100 Input voltage Output current Test point Test point Min. Typ. Max. Unit
(Unless otherwise specified, VCC=5 Ta=25 Write current IW=20
Item
Symbol
Digital input Pins
"High" applied voltage "Low" applied voltage Test point
VWDL
VWDH
VWDH -2.0 -1.1
VWDH -0.25 -0.4
VWUS
Current consumption Read Current consumption Write Digital input "Low" input voltage Digital input "High" input voltage Digital input "Low" input current Digital input "High" input current Write data input "Low" input voltage Write data input "High" input voltage Write data input current Write unsafe output saturation voltage Write unsafe output leak current
IWUS
Supply power ON/OFF detector threshold voltage
When lowered from Write mode does flow anymore, voltage VTHOFF. When raised from starts flow, voltage VTHON.
CXA3171N
Measurement conditions IW=AW VWC/RWC Servo write enabled Servo write enabled IW=KW/RWC +1.5 2.25 2.75 mAo-p mA/mA +1.6 Min. Typ. Max. Unit
Item
Symbol
conditions
Write current setting range
Write current voltage
Write current gain
Write current setting constant
WUS/SE voltage
VSEH
WUS/SE sink current
ISEH
Read amplifier differential voltage gain
Frequency band width
Input referred noise
Input voltage mVp-p, Load resistance (RDX, RDY) Test point [Vp-p] Frequency which lowers Head impedance when read amplifier output voltage amplified times voltage passed though (low pass filter cutoff frequency MHz) [Vrms], Test point
0.46 0.65
CXA3171N
Measurement conditions Min. Typ. Max. Unit
Item
Symbol
conditions
Common mode rejection ration
CMRR
Power supply rejection ratio
PSRR
Channel separation
Read data output offset voltage Read
VOFFR
In-phase input voltage mVp-p, When Read amplifier output [mVp-p], CMRR Test point Ripple voltage mVp-p, When Read amplifier output [mVp-p], PSRR Test point Selected head input voltage mVp-p Unselected head input voltage mVp-p, When Read amplifier output [mVp-p], Test point VOFFR V2-V3 Test point -300
CXA3171N
Measurement conditions Min. Typ. Max. Unit
Item
Symbol
conditions
Test point -300
RDX, common mode output voltage difference between modes
Vdiff
Test Point
RDX, common mode output voltage Read
-2.6 -2.3 -2.0
CXA3171N
CXA3171N
Unless otherwise specified, VCC=5 Ta=25 (Write data frequency) MHz, IW=20 (Head inductance) (Head resistance value) Refer Fig. Fig. Item Head differential voltage amplitude Symbol Measurement conditions Differential voltage between switching Write current time required Write current turn after changes from "High" "Low". TWR1 time required Read amplifier output turn after changes from "Low" "High". TWR2 time required Write current decreases after changes from "Low" "High". TSA1 time required turn "High" after last transition Write data when Write data stopped Write mode. TSA2 time required turn "Low" after first transition Write data Write mode. time required Read amplifier output reach when selected head switched Read mode. time required Write current reach after Write data falling edge. LH=0 RH=0 time required Write current reach from same time required reach from LH=0 RH=0 Min. Typ. Max. Unit
Vp-p
Mode switching time 15-1 Read Write
TWR1 15-2 Mode switching time Write Read TWR2
16-1
Mode switching time safe unsafe Mode switching time unsafe safe
TSA1
16-2
TSA2
Head switching time Write current propagation delay time Write current rise/fall time
TR/TF
Read amplifier output mVp-p
CXA3171N
Test Circuit
5.1k
to15MHz
2.7k
0.1µ
Fig.
0.1µ
0.1µ
Test Circuit
2.7k
5.1k
-10-
Fig.
CXA3171N
Timing Chart
TWR1
Fig.
Timing Chart
TSA1
TSA2
Fig.
-11-
CXA3171N
Description Functions Read amplifier This noise amplifier amplifying signals from heads with emitter follower output. outputs differential amplifier whose polarity between side head input same. Write circuit Write data input passes through buffer amp. drives Write switch circuit which supplies Write current heads. Write current flows into side when "Low" "High". Mode control mode shown Table WUS/SE. WUS/SE Table Table Table Mode selection
Mode Write Read Servo Write
Head selection heads selected shown Table HS0, pins. Head Table Head selection Servo write mode This mode allows writing multiple channels once. enable servo write mode follow these steps: Place device Read mode. following Table WUS/SE VSEH, input ISEH WUS/SE. While maintaing step above make low, placing device servo write mode.
-12-
CXA3171N
Write unsafe detection circuit This circuit detects write errors. normal Write mode, output low; conditions listed below, high. Head inputs open (under condition which. Write data frequency MHz) Head input shorted VCC. Write data frequency abnormally low. write current. read mode. Supply voltage abnormal (see power supply ON/OFF detection). Power supply ON/OFF detection This circuit monitors detect erroneous Writes. error status established when falls below threshold voltage (VTH) power supply ON/OFF detector, which case recording playback functions prohibited. When rises above VTH, prohibition these functions released. Head Table Head selection Servo Write mode
-13-
CXA3171N
Application Circuit
2.7k 5.1k
Application circuits shown typical examples illustrating operation devices. Sony cannot assume responsibility problems arising these circuits infringement third party patent other right same.
-14-
CXA3171N
Notes operation This device handles high frequency high gain signals. Please note following; Connect decoupling capacitor approximately 1000 near device. Make area large possible. When using 2-channel, short-circuit sides unused head pins leave them open. constant voltage pin. When noise affects this pin, creates noise Write current. Therefore, locate close device possible. Write unsafe detection circuit This circuit uses voltage waveforms head pins detection.
Wave form write data
Voltage waveform head pins (HX,
VTH=1.4V
must more than When possible that Write unsafe detection maximum frequency becomes more than MHz. normal operating area write unsafe detection circuit changed head inductance, head resistance, write current other.
-15-
CXA3171N
Application Notes following characteristics reference. Item Differential output capacitance Differential output resistance Differential input capacitance Read mode Differential input resistance Output resistance Unselected head differential current Write mode Write mode Write current symmetry TAS=T1-T2 Symbol Conditions Between head input pins Between head input pins RDY, LH=1 RH=12 IW=20 LH=0 RH=0 IW=20
VCC=5V, Ta=25 Min. Typ. Max. 1200 2400 Unit
mAp-p -0.5
IWX+IWY
Setting Write current Write current with resistor IW=K/RWC (mA) Refer Fig.
Fig.5 Write current
-Write current (mA)
-16-
CXA3171N
Normalized write current Supply voltage 1.04 Ta=25°C RWC=3.3k 1.04
Normalized write current Ambient temperature VCC=5V RWC=3.3k
IW/IW (Ta=25°C)
IW/IW (VCC=5V)
1.02
1.02
0.98
0.98
0.96 Supply voltage
0.96
Ambient temperature [°C]
Normalized read amplifier voltage tgain Supply voltage 1.04 Ta=25°C 1.04
Normalized read amplifier voltage gain Ambient temperature VCC=5V
AV/AV (Ta=25°C)
AV/AV (VCC=5V)
1.02
1.02
0.98
0.98
0.96 Supply voltage
0.96
Ambient temperature [°C]
Power supply ON/OFF detector threshold voltage Ambient temperature
Power supply ON/OFF Detector Threshold Voltage
Ambient temperature [°C]
-17-
CXA3171N
Package Outline
Unit
24PIN SSOP(PLASTIC)
1.25
0.22 0.05
0.05 0.15 0.02 0.65
0.13
NOTE: Dimensions does include mold protrusion. DETAIL
PACKAGE STRUCTURE
PACKAGE MATERIAL SONY CODE EIAJ CODE JEDEC CODE SSOP-24P-L01 SSOP024-P-0056 LEAD TREATMENT LEAD MATERIAL PACKAGE MASS EPOXY RESIN SOLDER/PALLADIUM PLATING 42/COPPER ALLOY 0.1g
NOTE PALLADIUM PLATING This product uses S-PdPPF (Sony Spec.-Palladium Pre-Plated Lead Frame).
-18-

4ch. Read/Write Amplifier three terminal Head Hard Disk Drive Des

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