MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS VOLTS INPUT OUTPUT M
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AM82223-018
MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS
VOLTS INPUT OUTPUT MATCHING POUT MINIMUM GAIN MINIMUM COMMON BASE CONFIGURATION
DESCRIPTION:
AM82223-018 common base silicon bipolar transistor designed high gain efficiency telemetry applications 2.2-2.3 frequency range. AM82223-018 incorporates internal input output impedance matching structures along with rugged, emitter-site ballasted geometry.
ABSOLUTE MAXIMUM RATINGS (Tcase 25°C)
Symbol
PDISS TSTG
Parameter
Value
58.3 +200
Unit
Power Dissipation Device Current* Collector-Supply Voltage* Junction Temperature Storage Temperature
Thermal Data
RTH(J-C) Junction-case Thermal Resistance °C/W
053-7010 9-2002
AM82223-018
STATIC
ELECTRICAL SPECIFICATIONS (Tcase 25°C)
Symbol
BVcbo BVebo Icbo
Test Conditions Min.
Value Typ.
Max.
-2.0
Unit
DYNAMIC
Symbol POUT
Test Conditions Min.
4.0W 4.0W 4.0W =24V =24V =24V
Value Typ.
Max.
Unit
053-7010 9-2002
AM82223-018
PACKAGE MECHANICAL DATA
053-7010 9-2002
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