POWER IGBT POWER IGBT generation high voltage power IGBTs. Using

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

POWER IGBT POWER IGBT generation high voltage power IGBTs. Using

Datasheet Thumbnail

Top Searches for this datasheet

APT50GP60JDF2
POWER IGBT
POWER IGBT generation high voltage power IGBTs. Using Punch Through Technology this IGBT ideal many high frequency, high voltage switching applications been optimized high frequency switchmode power supplies.
ISOTOP
Recognized"
Conduction Loss Gate Charge Ultrafast Tail Current shutoff
operation 400V, operation 400V, SSOA rated
MAXIMUM RATINGS
Symbol VCES VGEM SSOA TJ,TSTG Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current 25°C Continuous Collector Current 110°C Pulsed Collector Current
Ratings: 25°C unless otherwise specified.
APT50GP60JDF2 UNIT
190A@600V
Watts Amps Volts
25°C
Safe Operating Area 150°C Total Power Dissipation Operating Storage Junction Temperature Range Max. Lead Temp. Soldering: 0.063" from Case Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVCES VGE(TH) VCE(ON) Characteristic Test Conditions Collector-Emitter Breakdown Voltage (VGE 500µA) Gate Threshold Voltage (VCE VGE, 1mA, 25°C) UNIT
Volts
Collector-Emitter Voltage (VGE 15V, 50A, 25°C) Collector-Emitter Voltage (VGE 15V, 50A, 125°C) Collector Cut-off Current (VCE 600V, 25°C) Collector Cut-off Current (VCE 600V, 125°C) Gate-Emitter Leakage Current (VGE ±20V)
4-2003 050-7437
2500 ±100
CAUTION: These Devices Sensitive Electrostatic Discharge. Proper Handling Procedures Should Followed.
Website http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP SSOA Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
APT50GP60JDF2
Test Conditions Capacitance Gate Charge 300V 150°C, 15V, 100µH,VCE 600V Inductive Switching (25°C) 400V
UNIT
5700 1261 1058
Gate-Emitter Charge Gate-Collector ("Miller Charge Safe Operating Area
td(on) td(off) Eon1 Eon2 Eoff td(on) td(off) Eon1 Eon2 Eoff
Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-on Switching Energy (Diode) Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
+25°C
Inductive Switching (125°C) 400V +125°C
Turn-on Switching Energy (Diode) Turn-off Switching Energy
THERMAL MECHANICAL CHARACTERISTICS
Symbol Characteristic Junction Case (IGBT) Junction Case (DIODE) Package Weight UNIT °C/W
1.17 29.2
Repetitive Rating: Pulse width limited maximum junction temperature. Combi devices, Ices includes both IGBT FRED leakages MIL-STD-750 Method 3471. Eon1 clamped inductive turn-on-energy IGBT only, without effect commutating diode reverse recovery current adding IGBT turn-on loss. (See Figure 24.) Eon2 clamped inductive turn-on energy that includes commutating diode reverse recovery current IGBT turn-on switching loss. Combi device used clamping diode shown Eon2 test circuit. (See Figures 22.) Eoff clamped inductive turn-off energy measured accordance with JEDEC standard JESD24-1. (See Figures 23.)
Reserves right change, without notice, specifications information contained herein.
050-7437
4-2003
TYPICAL PERFORMANCE CURVES
TC=25°C TC=-55°C TC=125°C VCE, COLLECTER-TO-EMITTER VOLTAGE FIGURE Output Characteristics(VGE 15V)
VGE, GATE-TO-EMITTER VOLTAGE
250µs PULSE TEST <0.5 DUTY CYCLE 15V. 250µs PULSE TEST <0.5 DUTY CYCLE
APT50GP60JDF2
TC=25°C TC=125°C TC=-55°C
10V. 250µs PULSE TEST <0.5 DUTY CYCLE
COLLECTOR CURRENT
COLLECTOR CURRENT
VCE, COLLECTER-TO-EMITTER VOLTAGE
FIGURE Output Characteristics (VGE 10V) VCE=300V GATE CHARGE (nC) FIGURE Gate Charge VCE=480V
25°C
COLLECTOR CURRENT
VCE=120V
-55°C
25°C 125°C
VGE, GATE-TO-EMITTER VOLTAGE FIGURE Transfer Characteristics
25°C. 250µs PULSE TEST <0.5 DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE
VCE, COLLECTOR-TO-EMITTER VOLTAGE
=100A
=100A
15V. 250µs PULSE TEST <0.5 DUTY CYCLE
VGE, GATE-TO-EMITTER VOLTAGE FIGURE State Voltage Gate-to- Emitter Voltage
Junction Temperature (°C) FIGURE State Voltage Junction Temperature
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
1.10 1.05 0.95 0.85
COLLECTOR CURRENT(A)
1.15
4-2003 050-7437
JUNCTION TEMPERATURE (°C) FIGURE Breakdown Voltage Junction Temperature
CASE TEMPERATURE (°C) FIGURE Collector Current Case Temperature
TYPICAL PERFORMANCE CURVES
VGE= 400V 25°C 125°C VGE=
(OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns)
APT50GP60JDF2
400V
=15V,TJ=25°C =15V,TJ=125°C =10V,TJ=125°C
=10V,TJ=25°C
ICE, COLLECTOR EMITTER CURRENT FIGURE Turn-On Delay Time Collector Current
RISE TIME (ns) FALL TIME (ns)
125°C,VGE
ICE, COLLECTOR EMITTER CURRENT FIGURE Turn-Off Delay Time Collector Current
125°C,
25°C,
125°C,VGE
100µH, 400V
ICE, COLLECTOR EMITTER CURRENT FIGURE Current Rise Time Collector Current 4000
EON2, TURN ENERGY LOSS (µJ) EOFF, TURN ENERGY LOSS (µJ)
400V
100µH, 400V
ICE, COLLECTOR EMITTER CURRENT FIGURE Current Fall Time Collector Current 3500 3000 2500 2000 1500 1000
25°C,
400V
3500 3000
125°C,
=125°C, VGE=15V
=125°C,VGE=10V
2500 2000 1500 1000
25°C, VGE=10V 25°C, VGE=15V
ICE, COLLECTOR EMITTER CURRENT FIGURE Turn-On Energy Loss Collector Current 6000
SWITCHING ENERGY LOSSES (µJ)
400V +15V 125°C
ICE, COLLECTOR EMITTER CURRENT FIGURE Turn Energy Loss Collector Current 4000
SWITCHING ENERGY LOSSES (µJ)
400V +15V
5000
3500 3000 2500 2000 1500 1000
4000 3000
Eon2 100A Eoff 100A
Eon2 100A
Eoff 100A
4-2003
2000 Eon2 1000 Eon2 Eoff Eoff
Eon2 Eon2
Eoff Eoff
050-7437
GATE RESISTANCE (OHMS) FIGURE Switching Energy Losses Gate Resistance
JUNCTION TEMPERATURE (°C) FIGURE Switching Energy Losses Junction Temperature
TYPICAL PERFORMANCE CURVES
10,000 5,000
COLLECTOR CURRENT
APT50GP60JDF2
Cies
CAPACITANCE
1,000 Coes
Cres
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure Capacitance Collector-To-Emitter Voltage
VCE, COLLECTOR EMITTER VOLTAGE Figure Minimim Switching Safe Operating Area
0.20
ZJC, THERMAL IMPEDANCE (°C/W)
0.16 0.12 0.08 0.04 0.05 10-5
Note:
Duty Factor t1/t2 Peak
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS) Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case Pulse Duration
MODEL
0.0775
0.0158F
FMAX, OPERATING FREQUENCY (kHz)
Junction temp.
Power (Watts)
0.216
0.313F
0.0855 Case temperature
4.49F
125°C 75°C 400V
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
COLLECTOR CURRENT Figure Operating Frequency Collector Current
Fmax min(f max1 max1 Pdiss 0.05 d(off Pdiss Pcond
4-2003 050-7437
TYPICAL PERFORMANCE CURVES
APT50GP60JDF2
APT30DF60
Gate Voltage
td(on)
D.U.T.
Collector Current
Collector Voltage
Switching Energy
Figure Inductive Switching Test Circuit
Figure Turn-on Switching Waveforms Definitions
Gate Voltage
VTEST
*DRIVER SAME TYPE D.U.T.
td(off)
Collector Voltage
100uH CLAMP
Switching Energy
Collector Current
DRIVER* D.U.T.
Figure Turn-off Switching Waveforms Definitions
Figure EON1 Test Circuit
050-7437
4-2003
APT50GP60JDF2
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Characteristic Test Conditions Maximum Average Forward Current 96°C, Duty Cycle 0.5) Forward Current Non-Repetitive Forward Surge Current 45°C, 8.3ms)
Ratings: 25°C unless otherwise specified.
APT50GP60JDF2 UNIT
Amps
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic Test Conditions Forward Voltage 100A 50A, 150°C UNIT
Volts
SOT-227 (ISOTOP®) Package Outline
31.5 (1.240) 31.7 (1.248) (.307) (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) places) 11.8 (.463) 12.2 (.480) (.350) (.378) places)
(.157) places)
(.157) (.165) places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
(.129) (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
Emitter/Anode
Collector/Cathode
Emitter/Anode terminals shorted internally. Current handling capability equal either Emitter/Anode terminal.
4-2003 050-7437
Emitter/Anode Dimensions Millimeters (Inches)
APT's devices covered more following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202
Gate
5,182,234 5,231,474
5,019,522 5,434,095
5,262,336 5,528,058

POWER IGBT POWER IGBT generation high voltage power IGBTs. Using

Top Searches for this datasheet

Other recent searches