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APT40GP60B2DF2

600V 39A

APT40GP60B2DF2
600V 39A
POWER MOS 7 IGBT
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
T-MaxTM
· Low Conduction Loss · Low Gate Charge · Ultrafast Tail Current shutoff
MAXIMUM RATINGS
Symbol VCES VGE VGEM I C1 I C2 I CM SSOA PD TJ, TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current
· 100 kHz operation @ 400V, 41A · 200 kHz operation @ 400V, 26A · SSOA rated
APT40GP60B2DF2 UNIT
100 62 160 160A @ 600V 543 -55 to 150 300
Watts °C Amps
STATIC ELECTRICAL CHARACTERISTICS
Volts
4-2003 050-7404 Rev B
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
APT40GP60B2DF2
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching SOA
td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff
Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-on Switching Energy (Diode) 5 Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
Turn-on Switching Energy (Diode) Turn-off Switching Energy
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT °C / W gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance wtih JEDEC standard JESD24-1. (See Figures 21, 23.) 7 Continuous current limited by package lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
IC, COLLECTOR CURRENT (A)
APT40GP60B2DF2
IC, COLLECTOR CURRENT (A)
0 0.5 1 1.5 2 2.5 3 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
VGE, GATE-TO-EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
1 2 3 4 5 6 7 8 9 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.2
IC, DC COLLECTOR CURRENT(A)
0 25 50 75 100 125 TJ, Junction Temperature (°C) FIGURE 6, On State Voltage vs Junction Temperature 180 160 140 120 100 80
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
60 40 20 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50 -25
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
APT40GP60B2DF2
td(ON), TURN-ON DELAY TIME (ns)
td (OFF), TURN-OFF DELAY TIME (ns)
0 20 40 60 80 100 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 120 100
tr, RISE TIME (ns)
0 20 40 60 80 100 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 100
tf, FALL TIME (ns)
0 20 40 60 80 100 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 3000
EON1, TURN ON ENERGY LOSS (µJ)
0 20 40 60 80 100 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 2000
EOFF, TURN OFF ENERGY LOSS (µJ)
0 0 20 40 60 80 100 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 4000
SWITCHING ENERGY LOSSES (µJ) SWITCHING ENERGY LOSSES (µJ)
0 20 40 60 80 100 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 3000
Eon2 80A 2500 2000
Eon2 80A
Eoff 80A Eon2 40A
Eoff 40A 500 0 0 Eoff20A
Eon2 20A
Eoff 40A
Eon2 20A Eoff 20A
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
10, 000 5, 000 Cies 160 140
IC, COLLECTOR CURRENT (A)
APT40GP60B2DF2
C, CAPACITANCE ( F)
1, 000 500 Coes
120 100 80 60 40 20 0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18, Minimim Switching Safe Operating Area 0
100 50 Cres 10
0 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 0.25
Z JC, THERMAL IMPEDANCE (°C / W)
Note:
PDM t1
SINGLE PULSE 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
RC MODEL
0.00663F
FMAX, OPERATING FREQUENCY (kHz)
Junction temp. ( "C)
Power (Watts)
0.0106F
0.133 Case temperature
0.262F
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
30 40 50 60 70 80 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
APT40GP60B2DF2
APT30DF60
Gate Voltage
td(on)
Collector Current
D.U.T.
Collector Voltage
Figure 21, Inductive Switching Test Circuit
Switching Energy
Figure 22, Turn-on Switching Waveforms and Definitions
Gate Voltage
VTEST DRIVER SAME TYPE AS D.U.T.
td(off)
Collector Voltage
A V CE IC 100uH
V CLAMP
Switching Energy
Collector Current
A DRIVER D.U.T.
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 24, EON1 Test Circuit
APT40GP60B2DF2
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
APT40GP60B2DF2 30 UNIT
STATIC ELECTRICAL CHARACTERISTICS
Volts
T-MAX (B2) Package Outline
Collector (Cathode)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Gate Collector (Cathode) Emitter (Anode)