600V POWER IGBT POWER IGBT generation high voltage power IGB

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600V POWER IGBT POWER IGBT generation high voltage power IGB

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APT40GP60B2DF2
600V
POWER IGBT
POWER IGBT generation high voltage power IGBTs. Using Punch Through Technology this IGBT ideal many high frequency, high voltage switching applications been optimized high frequency switchmode power supplies.
T-Max
Conduction Loss Gate Charge Ultrafast Tail Current shutoff
MAXIMUM RATINGS
Symbol VCES VGEM SSOA TJ,TSTG Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current
operation 400V, operation 400V, SSOA rated
Ratings: 25°C unless otherwise specified.
APT40GP60B2DF2 UNIT
25°C Volts
160A 600V
Watts Amps
Continuous Collector Current 110°C Pulsed Collector Current
25°C
Switching Safe Operating Area 150°C Total Power Dissipation Operating Storage Junction Temperature Range Max. Lead Temp. Soldering: 0.063" from Case Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVCES VGE(TH) VCE(ON) Characteristic Test Conditions Collector-Emitter Breakdown Voltage (VGE 250µA) Gate Threshold Voltage (VCE VGE, 1mA, 25°C) UNIT
Volts
Collector-Emitter Voltage (VGE 15V, 40A, 25°C) Collector-Emitter Voltage (VGE 15V, 40A, 125°C) Collector Cut-off Current (VCE 600V, 25°C)
4-2003 050-7404
Collector Cut-off Current (VCE 600V, 125°C) Gate-Emitter Leakage Current (VGE ±20V)
3000 ±100
CAUTION: These Devices Sensitive Electrostatic Discharge. Proper Handling Procedures Should Followed.
Website http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP SSOA Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
APT40GP60B2DF2
Test Conditions Capacitance Gate Charge 300V 150°C, 15V, 100µH,VCE 600V Inductive Switching (25°C) VCC(Peak) 400V
UNIT
4610
Gate-Emitter Charge Gate-Collector ("Miller Charge Switching
td(on) td(off) Eon1 Eon2 Eoff td(on) td(off) Eon1 Eon2 Eoff
Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-on Switching Energy (Diode) Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
+25°C
Inductive Switching (125°C) VCC(Peak) 400V +125°C
Turn-on Switching Energy (Diode) Turn-off Switching Energy
THERMAL MECHANICAL CHARACTERISTICS
Symbol Characteristic Junction Case (IGBT) Junction Case (DIODE) Package Weight UNIT °C/W
Repetitive Rating: Pulse width limited maximum junction temperature. Combi devices, Ices includes both IGBT FRED leakages MIL-STD-750 Method 3471. Eon1 clamped inductive turn-on-energy IGBT only, without effect commutating diode reverse recovery current adding IGBT turn-on loss. (See Figure24.) Eon2 clamped inductive turn-on energy that includes commutating diode reverse recovery current IGBT turn-on switching loss. Combi device used clamping diode shown Eon2 test circuit. (See Figures 22.) Eoff clamped inductive turn-off energy measured accordance wtih JEDEC standard JESD24-1. (See Figures 23.) Continuous current limited package lead temperature.
Reserves right change, without notice, specifications information contained herein.
050-7404
4-2003
TYPICAL PERFORMANCE CURVES
COLLECTOR CURRENT
15V. 250µs PULSE TEST <0.5 DUTY CYCLE
APT40GP60B2DF2
10V. 250µs PULSE TEST <0.5 DUTY CYCLE
TC=-55°C
TC=125°C
TC=-55°C
COLLECTOR CURRENT
TC=125°C TC=25°C
TC=25°C
VCE, COLLECTER-TO-EMITTER VOLTAGE
VCE, COLLECTER-TO-EMITTER VOLTAGE
FIGURE Output Characteristics(VGE 15V)
VGE, GATE-TO-EMITTER VOLTAGE
250µs PULSE TEST <0.5 DUTY CYCLE
FIGURE Output Characteristics (VGE 10V) GATE CHARGE (nC) FIGURE Gate Charge
25°C
COLLECTOR CURRENT
VCE=120V VCE=300V
VCE=480V
-55°C 25°C 125°C
VGE, GATE-TO-EMITTER VOLTAGE FIGURE Transfer Characteristics
VCE, COLLECTOR-TO-EMITTER VOLTAGE
VCE, COLLECTOR-TO-EMITTER VOLTAGE
25°C. 250µs PULSE TEST <0.5 DUTY CYCLE
15V. 250µs PULSE TEST <0.5 DUTY CYCLE
VGE, GATE-TO-EMITTER VOLTAGE FIGURE State Voltage Gate-to- Emitter Voltage
COLLECTOR CURRENT(A)
Junction Temperature (°C) FIGURE State Voltage Junction Temperature
4-2003
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
1.15 1.10 1.05 0.95 0.85
CASE TEMPERATURE (°C) FIGURE Collector Current Case Temperature
050-7404
JUNCTION TEMPERATURE (°C) FIGURE Breakdown Voltage Junction Temperature
APT40GP60B2DF2
td(ON), TURN-ON DELAY TIME (ns)
(OFF), TURN-OFF DELAY TIME (ns)
=15V,TJ=125°C =10V,TJ=125°C =15V,TJ=25°C
VGE= 400V 25°C, =125°C
VGE=
=10V,TJ=25°C
400V
ICE, COLLECTOR EMITTER CURRENT FIGURE Turn-On Delay Time Collector Current
RISE TIME (ns)
125°C,VGE
ICE, COLLECTOR EMITTER CURRENT FIGURE Turn-Off Delay Time Collector Current
100µH, 400V 125°C,
FALL TIME (ns)
125°C,VGE 100µH, 400V
25°C,
ICE, COLLECTOR EMITTER CURRENT FIGURE Current Rise Time Collector Current 3000
EON1, TURN ENERGY LOSS (µJ)
400V +15V
ICE, COLLECTOR EMITTER CURRENT FIGURE Current Fall Time Collector Current 2000
EOFF, TURN ENERGY LOSS (µJ)
400V +15V
=125°C,
2500
=125°C,10V
1500
125°C,
2000 1500 25°C,
1000
1000
25°C,
ICE, COLLECTOR EMITTER CURRENT FIGURE Turn-On Energy Loss Collector Current 4000
SWITCHING ENERGY LOSSES (µJ) SWITCHING ENERGY LOSSES (µJ)
400V 125°C +15V
25°C,
ICE, COLLECTOR EMITTER CURRENT FIGURE Turn Energy Loss Collector Current 3000
400V +15V
Eon2 2500 2000
Eon2
3500 3000 2500 2000 1500 1000
Eoff Eon2
1500
Eoff Eon2
4-2003
1000
Eoff Eoff20A
Eon2
Eoff
Eon2 Eoff
050-7404
GATE RESISTANCE (OHMS) FIGURE Switching Energy Losses Gate Resistance
JUNCTION TEMPERATURE (°C) FIGURE Switching Energy Losses Junction Temperature
TYPICAL PERFORMANCE CURVES
10,000 5,000 Cies
COLLECTOR CURRENT
APT40GP60B2DF2
CAPACITANCE
1,000 Coes
VCE, COLLECTOR EMITTER VOLTAGE Figure Minimim Switching Safe Operating Area
Cres
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure Capacitance Collector-To-Emitter Voltage 0.25
THERMAL IMPEDANCE (°C/W)
0.20 0.15 0.10
Note:
0.05 0.05 10-5 10-4
Duty Factor t1/t2 Peak
SINGLE PULSE 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE PULSE DURATION
MODEL
0.0106
0.00663F
FMAX, OPERATING FREQUENCY (kHz)
Junction temp.
Power (Watts)
Fmax min(f max1
0.0868
0.0106F
max1
125°C 75°C 400V
0.05 d(off Pdiss Pcond
0.133 Case temperature
0.262F
Pdiss
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
COLLECTOR CURRENT Figure Operating Frequency Collector Current
050-7404
4-2003
APT40GP60B2DF2
APT30DF60
Gate Voltage
td(on)
Collector Current
D.U.T.
Collector Voltage
Figure Inductive Switching Test Circuit
Switching Energy
Figure Turn-on Switching Waveforms Definitions
Gate Voltage
VTEST *DRIVER SAME TYPE D.U.T.
td(off)
Collector Voltage
100uH
CLAMP
Switching Energy
Collector Current
DRIVER* D.U.T.
Figure Turn-off Switching Waveforms Definitions
Figure EON1 Test Circuit
050-7404
4-2003
APT40GP60B2DF2
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Characteristic Test Conditions Maximum Average Forward Current 96°C, Duty Cycle 0.5) Forward Current Non-Repetitive Forward Surge Current 45°C, 8.3ms)
Ratings: 25°C unless otherwise specified.
APT40GP60B2DF2 UNIT
Amps
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic Test Conditions Maximum Forward Voltage 40A, 150°C UNIT
Volts
T-MAX (B2) Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector (Cathode)
20.80 (.819) 21.46 (.845)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055)
2.21 (.087) 2.59 (.102)
5.45 (.215) 2-Plcs.
Dimensions Millimeters (Inches)
APT's products covered more U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 foreign patents. Foreign patents pending. Rights Reserved.
050-7404
Gate Collector (Cathode) Emitter (Anode)
4-2003

600V POWER IGBT POWER IGBT generation high voltage power IGB

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