These N-Channel enhancement mode power field effect transistors produc

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These N-Channel enhancement mode power field effect transistors produc

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NDP7060 NDB7060 N-Channel Enhancement Mode Field Effect Transistor
These N-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process especially tailored minimize on-state resistance, provide superior switching performance, withstand high energy pulses avalanche commutation modes. These devices particularly suited voltage applications such automotive, DC/DC converters, motor controls, other battery powered circuits where fast switching, in-line power loss, resistance transients needed.
Features
75A, 60V. RDS(ON) 0.013 VGS=10V. Critical electrical parameters specified elevated temperature. Rugged internal source-drain diode eliminate need external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design extremely RDS(ON). TO-220 TO-263 (D2PAK) package both through hole surface mount applications.
Absolute Maximum Ratings
Symbol VDSS VDGR VGSS Parameter Drain-Source Voltage
25°C unless otherwise noted
NDP7060
NDB7060
Units
Drain-Gate Voltage (RGS Gate-Source Voltage Continuous Nonrepetitive Drain Current Continuous Pulsed
Maximum Power Dissipation 25°C Derate above 25°C
W/°C
TJ,TSTG
Operating Storage Temperature Range Maximum lead temperature soldering purposes, 1/8" from case seconds
1997 Fairchild Semiconductor Corporation
NDP7060.SAM
Electrical Characteristics 25°C unless otherwise noted)
Symbol Parameter Conditions Units DRAIN-SOURCE AVALANCHE RATINGS (Note BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) ID(on) Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current
CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current 125°C Gate Body Leakage, Forward Gate Body Leakage, Reverse VGS, 125°C Static Drain-Source On-Resistance 125°C On-State Drain Current Forward Transconductance 37.5 0.01 0.015 -100
CHARACTERISTICS (Note Gate Threshold Voltage 0.013 0.024
DYNAMIC CHARACTERISTICS
Ciss Coss Crss
tD(on) tD(off)
Input Capacitance Output Capacitance Reverse Transfer Capacitance
2960 1130
3600 1600
SWITCHING CHARACTERISTICS (Note Turn Delay Time Turn Rise Time Turn Delay Time Turn Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge RGEN 14.5
NDP7060.SAM
Electrical Characteristics
Symbol Parameter
25°C unless otherwise noted)
Conditions
Units
DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuos Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage 37.5 (Note 125°C Reverse Recovery Time Reverse Recovery Current dIF/dt A/µs 0.84
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 62.5 °C/W °C/W
Note: Pulse Test: Pulse Width Duty Cycle 2.0%.
NDP7060.SAM
Typical Electrical Characteristics
=20V
DRAIN-SOURCE CURRENT
DS(on), NORMALIZED
5.0V
DRAIN-SOURCE ON-RESISTANCE
DRAIN-SOURCE VOLTAGE
DRAIN CURRENT
Figure On-Region Characteristics
Figure On-Resistance Variation with Gate Voltage Drain Current
DS(on), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
DRAIN-SOURCE ON-RESISTANCE
125°C
DS(ON), NORMALIZED
25°C
-55°C
JUNCTION TEMPERATURE (°C)
DRAIN CURRENT
Figure On-Resistance Variation with Temperature
Figure On-Resistance Variation with Drain Current Temperature
GATE-SOURCE THRESHOLD VOLTAGE
DRAIN CURRENT GS(th) NORMALIZED
250µA
-55°C
125°C 25°C
GATE SOURCE VOLTAGE
JUNCTION TEMPERATURE (°C)
Figure Transfer Characteristics
Figure Gate Threshold Variation with Temperature
NDP7060.SAM
Typical Electrical Characteristics (continued)
1.15 DRAIN-SOURCE BREAKDOWN VOLTAGE
250µA
REVERSE DRAIN CURRENT
NORMALIZED
125°C
1.05
25°C -55°C
0.95
0.01
JUNCTION TEMPERATURE (°C)
0.001
BODY DIODE FORWARD VOLTAGE
Figure Breakdown Voltage Variation with Temperature
Figure Body Diode Forward Voltage Variation with Current Temperature
5000
GATE-SOURCE VOLTAGE
3000 2000 CAPACITANCE (pF)
Ciss
1000
Coss
Crss
DRAIN SOURCE VOLTAGE
GATE CHARGE (nC)
Figure Capacitance Characteristics
Figure Gate Charge Characteristics
d(on)
d(off)
INVERTED
PULSE IDTH
Figure Switching Test Circuit
Figure Switching Waveforms
NDP7060.SAM
Typical Electrical Characteristics (continued)
TRANSCONDUCTANCE (SIEMENS)
-55°C
DRAIN CURRENT
DS(O
25°C
125°C
SINGLE PULSE 25°C
DRAIN CURRENT
DRAIN-SOURCE VOLTAGE
Figure Transconductance Variation with Drain Current Temperature
Figure Maximum Safe Operating Area
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
r(t) °C/W
0.05 P(pk)
0.05 0.03 0.02 0.01 0.01
0.02 0.01 Single Pulse
Duty Cycle, ,TIME (ms) 1000
0.05
Figure Transient Thermal Response Curve
NDP7060.SAM

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