Features: Center Fired Gate Diffused Design Gate Current Thermal Imped

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Features: Center Fired Gate Diffused Design Gate Current Thermal Imped

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NTE5580 thru NTE5585 Silicon Controlled Rectifier Phase Control Applications
Features: Center Fired Gate Diffused Design Gate Current Thermal Impedance High Surge Electrical Characteristics: Repetitive Peak Off-State Reverse Voltage, VDRM VRRM NTE5580 200V NTE5582 600V NTE5584 1200V NTE5585 1600V Maximum On-State Current, I(RMS) 235A Maximum Average On-State Current, IT(AV) +88°C, 180° conduction 150A +80°C, phase conduction 135A Maximum Peak One-Cycle, Non-Repetitive Surge Current, ITSM 50Hz 3200A 60Hz 3500A Maximum Fusing (1.5msec), 32,000A2sec Peak On-State Voltage +25°C, 180° conduction, Rated IT(AV)), 1.7V Maximum Thermal Resistance, Junction-to-Case, RthJC 0.14°C/W Typical Turn-Off Time 125°C), 250µs Rate-of-Rise Turned-On Current, di/dt 200A/µs Operating Junction Temperature Range, -40° +125°C Maximum Reverse Recovered Charge +25°C), 200µc Maximum Critical Rate-of-Rise Off-State Voltage, dV/dt Exponential Max. Rated 200V/µs Maximum Required Gate Current Trigger, -40°C 200mA +25°C 150mA Maximum Required Gate Voltage Trigger -40° +125°C), Peak On-State Voltage, Note Maximum Stud Torque In-Lbs (33.9 N-M) Note LN(I) Where: IMIN IMAX 3000A .523 .022 .0005 .038
1.443 (36.68) (Across Corners)
Screw
Cathode Cathode (Red)
1.212 (30.8) .156 (3.96)
1.077 (27.35)
1.031 (26.18) (Ceramic) .643 (16.35) Screw
.350 (8.89) Gate (White)
3.625 (92.07)
8.100 (205.74) (Terminals
.630 (16.0) 3/4-16 UNF-2A (Terminal Anode

Features: Center Fired Gate Diffused Design Gate Current Thermal Imped

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