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Maximum Ratings Electrical Characteristics: +125°C unless otherwise sp
Top Searches for this datasheetNTE5374 NTE5375 Silicon Controlled Rectifier (SCR) High Speed Switching Maximum Ratings Electrical Characteristics: +125°C unless otherwise specified) Repetitive Peak Voltages, VDRM, VRRM NTE5374 600V NTE5375 1200V Non-Repetitive Peak Off-State Voltage, VDSM NTE5374 600V NTE5375 1200V Non-Repetitive Peak Reverse Blocking Voltage, VRSM NTE5374 700V NTE5375 1300V Average On-State Current +85°C, Single phase, 50Hz, 180° sinewave), IT(AV) 183A On-State Current, IT(RMS) 355A Continuous On-State Current, 355A Peak One-Cycle Surge (Non-Repetitive) On-State Current, ITSM 10ms, half sinewave, TJ(initial) +125°C, 0.6VRRMmax) 3500A 10ms, half sinewave, TJ(initial) +125°C, 10V) 3850A Maximum Permissible Surge Energy (TJ(initial) +125°C), 10ms, 0.6VRRMmax) 61.3 103A2sec 10ms, 10V) 74.1 103A2sec 3ms, 10V) 54.5 103A2sec Peak Forward Gate Current (Anode Positive with Respect Cathode), IFGM Peak Forward Gate Voltage (Anode Positive with Respect Cathode), VFGM Peak Reverse Gate Voltage, VRGM Average Gate Power, PG(AV) 1.5W Peak Gate Power, Rate Rise Off-State Voltage VDRM, Gate Open-Circuit), dv/dt 200V/µs Rate Rise On-State Current (Repetitive, Gate Drive 20V, with 1µs), di/dt 500A/µs Peak On-State Voltage 600A), 1.96V Forward Conduction Threshold Voltage, 1.4V Forward Conduction Slope Resistance, 0.937m Repetitive Peak Off-State Current Rated VDRM), IDRM 30mA Repetitive Peak Reverse Current Rated VRRM), IRRM 30mA Maximum Gate Current Required Fire Devices +25°C, 1A), 200mA Maximum Gate Voltage Required Fire Devices +25°C, 1A), Maximum Ratings Electrical Characteristics (Cont'd): +125°C unless otherwise specified) Maximum Holding Current +25°C, 1A), 600mA Maximum Gate Voltage Which Will Trigger Device, 0.25V Typical Stored Charge 300A, dir/dt 20A/µs, 50V, Chord Value), 50µC Maximum Circuit Commutated Turn-Off Time, 300A, dir/dt 20A/µs, dv/dt 200V/µs VDRM) 40µs Typical Circuit Commutated Turn-Off Time, 300A, dir/dt 20A/µs, dv/dt 20V/µs VDRM) 35µs Operating Temperature Range, -40° +125°C Storage Temperature Range, Tstg -40° +150°C Thermal Resistance, Junction-to-Case, RthJC 0.04/W 1.443 (36.68) (Across Corners) Screw Cathode Cathode (Red) 1.212 (30.8) .156 (3.96) 1.077 (27.35) 1.031 (26.18) (Ceramic) .643 (16.35) Screw .350 (8.89) Gate (White) 8.100 (205.74) (Terminals 3.625 (92.07) .630 (16.0) 3/4-16 UNF-2A (Terminal Anode Other recent searchesTAT7466 - TAT7466 TAT7466 Datasheet Si4429EDY - Si4429EDY Si4429EDY Datasheet PHP3055E - PHP3055E PHP3055E Datasheet PHB3055E - PHB3055E PHB3055E Datasheet PHD3055E - PHD3055E PHD3055E Datasheet M3D070 - M3D070 M3D070 Datasheet M35SP-7 - M35SP-7 M35SP-7 Datasheet HN1C01FE - HN1C01FE HN1C01FE Datasheet HFE4228 - HFE4228 HFE4228 Datasheet FDB8870 - FDB8870 FDB8870 Datasheet CLSP-008U-4 - CLSP-008U-4 CLSP-008U-4 Datasheet AC750Vrms1 - AC750Vrms1 AC750Vrms1 Datasheet DC500V - DC500V DC500V Datasheet
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