Features: High Breakdown Voltage Reliability Fast Switching Speed Wide
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NTE2539 Silicon Transistor High Voltage, High Speed Switch
Features: High Breakdown Voltage Reliability Fast Switching Speed Wide Absolute Maximum Ratings: +25°C unless otherwise specified) Collector-Base Voltage, VCBO 500V Collector-Emitter Voltage, VCEO 400V Emitter-Base Voltage, VEBO Collector Current, Continuous Peak (Note Base Current, Collector Dissipation, +25°C 2.5W +25°C 160W Operating Junction Temperature, +150°C Storage Temperature Range, Tstg -55° +150°C Note Pulse Test: Pulse Width 300µs, Duty Cycle 10%. Electrical Characteristics: +25°C unless otherwise specified)
Parameter Collector Cutoff Current Emitter Cutoff Current Current Gain Symbol ICBO IEBO Test Conditions 400V, 3.2A 10mA Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VCE(sat) VBE(sat) 16A, 3.2A 16A, 3.2A Unit
Electrical Characteristics (Cont'd): +25°C unless otherwise specified)
Parameter Gain-Bandwidth Product Output Capacitance Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Turn-On Time Storage Time Fall Time Symbol Test Conditions 10V, 3.2A 10V, 1MHz Unit
V(BR)CBO 1mA, V(BR)EBO 1mA, VCEX(sus) 10A, -4A, 200µH Clamped tstg 20A, -8A, 200V
Collector-Emitter Breakdown Voltage V(BR)CEO 10mA,
.190 (4.82)
.615 (15.62)
.787 (20.0) .591 (15.02) .126 (3.22)
.787 (20.0)
.215 (5.47)
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