Description: NTE196 (NPN) NTE197 (PNP) silicon complementary transisto
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NTE196 (NPN) NTE197 (PNP) Silicon Complementary Transistors Audio Power Output Medium Power Switching
Description: NTE196 (NPN) NTE197 (PNP) silicon complementary transistors TO220 type package designed general purpose amplifier switching applications. Features: Current Gain Specified Amps: Collector-Emitter Sustaining Voltage: VCEO(sus) High Current-Gain Bandwidth Product: 4MHz 500mA (NTE196) 10MHz 500mA (NTE197) Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO Collector-Base Voltage, Emitter-Base Voltage, Collector Current, Continuous Peak Base Current, Total Power Dissipation +25°C), Derate Above 25°C 0.32W/°C Operating Junction Temperature Range, -65° +150°C Storage Temperature Range, Tstg -65° +150°C Thermal Resistance, Junction-to-Case, RthJC 3.125°C/W Electrical Characteristics: +25°C unless otherwise specified)
Characteristics
Symbol
Test Conditions
Unit
Collector-Emitter Sustaining Voltage VCEO(sus) 100mA, Note Collector Cutoff Current ICEO ICEX Emitter Cutoff Current IEBO 60V, 80V, VEB(off) 1.5V 80V, VEB(off) 1.5V, +150°C
Note Pulse Test: Pulse Width 300µs, Duty Cycle
Electrical Characteristics (Cont'd): +25°C unless otherwise specified)
Characteristics (Note
Symbol VCE(sat) VBE(on)
Test Conditions
Unit
Current Gain
Collector-Emitter Saturation Voltage Base-Emitter Voltage
Dynamic Characteristics
Current-Gain Bandwidth Product NTE196 NTE197
Output Capacitance Small-Signal Current Gain
500mA, ftest 1MHz, Note 10V, 1MHz 500mA, 50kHz
Note Pulse Test: Pulse Width 300µs, Duty Cycle Note |hfe| ftest .420 (10.67) .110 (2.79)
.147 (3.75)
.500 (12.7)
.250 (6.35) .500 (12.7) .070 (1.78) Base .100 (2.54) Emitter Collector/Tab
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