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Description: NTE194 silicon amplifier transistor packaged standard TO9


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NTE194 Silicon Transistor Audio Power Amplifier
Description: NTE194 silicon amplifier transistor packaged standard TO92 case. Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO 160V Collector-Base Voltage, VCBO 180V Emitter-Base Voltage, VEBO Continuous Collector Current, 600mA Total Device Dissipation +25°C), 350mW Derate above 25°C 2.8mW/°C Total Device Dissipation +25°C), 1.0W Derate above 25°C 8.0mW/°C Operating Junction Temperature Range, -55° +150°C Storage Temperature Range, Tstg -55° +150°C Thermal Resistance, Junction-to-Case, RthJC 125°C/W Thermal Resistance, Junction-to-Ambient (Note RthJA 357°C/W Note RthJA measured with device soldered into typical printed circuit board. Electrical Characteristics: +25°C unless otherwise specified)
Parameter Characteristics Collector-Emitter Breakdown Voltage Collctor-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current V(BR)CEO 1mA, Note V(BR)CBO 100µA, V(BR)EBO 10µA, ICBO IEBO 120V, 120V, +100°C Emitter Cutoff Current Symbol Test Conditions Unit
Note Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%.
Electrical Characteristics (Cont'd): +25°C unless otherwise specified)
Parameter Characteristics (Note Current Gain 10mA 50mA Collector-Emitter Saturation Voltage VCE(sat) VBE(sat) 10mA, 50mA, Base-Emitter Saturation Voltage 10mA, 50mA, Small-Signal Characteristics Current Gain-Bandwidth Product Output Capacitance Input Capacitance Small-Signal Current Gain Noise Figure Cobo Cibo 10V, 10mA, 100MHz 10V, 1MHz 0.5V, 1MHz 10V, 1mA, 1kHz 250µA, 10Hz 15.7kHz 0.15 0.20 Symbol Test Conditions Unit
Note Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%.
.135 (3.45) .210 (5.33)
Seating Plane
.500 (12.7)
.021 (.445)
.100 (2.54) .050 (1.27) .165 (4.2) .105 (2.67) .105 (2.67) .205 (5.2)

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