Description: NTE191 (NPN) NTE240 (PNP) silicon complementary transisto

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Description: NTE191 (NPN) NTE240 (PNP) silicon complementary transisto

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NTE191 (NPN) NTE240 (PNP) Silicon Complementary Transistors High Voltage Video Amplifier
Description: NTE191 (NPN) NTE240 (PNP) silicon complementary transistors TO202N type package designed high-voltage video luminance output stages receivers. Features: High Collector-Emitter Breakdown Voltage: V(BR)CEO 300V (Min) Collector-Emitter Saturation Voltage: VCE(sat) 0.75V (Max) 30mA Collector-Base Capacitance: (Max) Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO 300V Collector-Base Voltage, 300V Emitter-Base Voltage, VEBO NTE191 NTE240 Continuous Collector Current, 500mA Total Device Dissipation +25°C), Derate Above 25°C 8mW/°C Total Device Dissipation +25°C), Derate Above 25°C 80mW/°C Operating Junction Temperature Range, -55° +150°C Storage Temperature Range, Tstg -55° +150°C Thermal Resistance, Junction-to-Case, RthJC 12.5°C/W Thermal Resistance, Junction-to-Ambient (Note RthJA 125°C/W Note NTE191 discontinued device longer available. Note RthJA measured with device soldered into typical printed circuit board. Electrical Characteristics: +25°C unless otherwise specified)
Parameter Characteristics Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage NTE191 NTE240 V(BR)CEO 1mA, Note V(BR)CBO 100µA, V(BR)EBO 100µA, Symbol Test Conditions Unit
Note Pulse Test: Pulse Width 300µs, Duty Cycle
Electrical Characteristics (Cont'd): +25°C unless otherwise specified)
Parameter Characteristics (Cont'd) Collector Cutoff Current Emitter Cutoff Current Characteristics Current Gain (NTE191 NTE240) NTE191 1mA, 10V, Note 10mA, 10V, Note 30mA, 10V, Note NTE240 10mA, 10V, Note 30mA, 10V, Note Collector-Emitter Saturation Voltage Base-Emitter Voltage NTE191 NTE240 Dynamic Characteristics Current Gain-Bandwidth Product NTE191 NTE240 Collector-Base Capacitance NTE191 NTE240 10mA, 20V, 100MHz, Note 20V, 1MHz VCE(sat) VBE(on) 30mA, 30mA, 0.75 0.85 0.90 ICBO IEBO 200V, Symbol Test Conditions Unit
Note Pulse Test: Pulse Width 300µs, Duty Cycle
.380 (9.65) .050 (1.27) .160 (4.06) .280 (7.25) .128 (3.28)
.100 (2.54)
.218 (5.55)
.995 (25.3)
.475 (12.0)
.100 (2.54) .200 (5.08) Collector Connected

Description: NTE191 (NPN) NTE240 (PNP) silicon complementary transisto

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