Description: NTE190 silicon transistor TO202N type case designed horiz
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NTE190 Silicon Transistor High Voltage Amplifier
Description: NTE190 silicon transistor TO202N type case designed horizontal drive applications, high voltage linear amplifiers, high voltage transistor regulators. Features: High Collector-Emitter Breakdown Voltage: V(BR)CEO 180V (Min) Collector-Emitter Saturation Voltatge: VCE(sat) 0.5V (Max) 200mA High Power Dissipation: +25°C Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO 180V Collector-Base Voltage, 180V Emitter-Base Voltage, Collector Current, Total Device Dissipation +25°C), Derate Above 25°C 8mW/°C Total Device Dissipation +25°C), Derate Above 25°C 80mW/°C Operating Junction Temperature Range, -55° +150°C Storage Temperature Range, Tstg -55° +150°C Lead Temperature (During Soldering, 1/16" from case 10sec), +260°C Thermal Resistance, Junction-to-Ambient, RthJA 125°C/W Thermal Resistance, Junction-to-Case, RthJC 12.5°C/W Electrical Characteristics: +25°C unless otherwise specified)
Parameter Characteristics Collector-Emitter Breakdown Voltage V(BR)CEO 1mA, Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current V(BR)CBO 100µA, V(BR)EBO 100µA, ICBO 150V, Symbol Test Conditions Unit
Electrical Characteristics (Cont'd): +25°C unless otherwise specified)
Parameter Characteristics (Note Current Gain Base-Emitter Voltage Collector-Emitter Saturation Voltage Dynamic Characteristics Current Gain-Bandwidth Product Output Capacitance Input Capacitance 50mA, 20V, 20MHz 10V, 100kHz 0.5V, 100kHz VBE(on) VCE(sat) 10mA, 200mA, 200mA, 20mA Symbol Test Conditions Unit
Note Pulse Test: Pulse Width 300µs. Duty Cycle
.380 (9.65) .050 (1.27) .160 (4.06) .280 (7.25) .128 (3.28)
.100 (2.54)
.218 (5.55)
.995 (25.3)
.475 (12.0)
.100 (2.54) .200 (5.08) Collector Connected
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