High Gain, Noise GaAs DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM

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High Gain, Noise GaAs DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM

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MwT-S7
High Gain, Noise GaAs
DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM
CHIP THICKNESS
Dimensions Microns
FEATURES
HIGH AVAILABLE GAIN WHEN BIASED LOW-NOISE EXCELLENT BROADBAND GAIN OSCILLATOR BUFFER APPLICATIONS MICRON REFRACTORY METAL/GOLD GATE MICRON GATE WIDTH CHOICE CHIP PACKAGE TYPES
DESCRIPTION
MwT-S7 GaAs MESFET device whose nominal quarter-micron gate length micron gate width make ideally suited applications requiring high-gain frequency range while exhibiting noise figure. straight geometry MwT-S7 makes equally effective either wideband (e.g. GHz) narrow-band applications. Procesing which guarantees phase noise makes MwT-S7 particularly attractive oscillator applications. chip produced using MwT's reliable metal system devices from each wafer screened insure reliability. chips passivated using MwT's patented "Diamond-Like Carbon" process increased durability, Designers MwT's unique selection feature choose devices from narrow Idss ranges, insuring consistent circuit operation.
SPECIFICATIONS 25°C
SYMBOL PARAM. CONDITIONS UNITS
SPECIFICATIONS 25°C
SYMBOL PARAMETERS CONDITIONS FREQ UNITS
IDSS BVGSO BVGDO
Saturated Drain Current Vds= VGS= Transconductance Vds= VGS= Pinch-off Voltage Vds= IDS= Gate-to-Source Breakdown Volt. Igs= -1.0 Gate-to-Drain Breakdown Volt. Igd= -1.0 Thermal Resistance
-1.5 -4.0 -5.0 -7.0
P1dB
Output Power Compression VDS= Idss= IDS=30mA Small Signal Gain VDS= Idss= IDS=30mA Optimum Noise Figure VDS= 3.0V IDS= 10mA Gain Optimum Noise Figure VDS= 3.0V IDS= 10mA Recommended IDSS Range Optimum P1dB
10.0
16.0 11.0 3470
-4.5
NFopt
-7.0 380* IDSS
MwT-S7 Chip, °C/W MwT-S770, S773 *Overall depends case mounting.
DEVICE EQUIVALENT CIRCUIT MODEL
GATE
PARAMETER
DRAIN
VALUE 0.025 0.07 3.67 0.027 0.159 0.13 0.05 0.314 0.027 69.0 psec
SOURCE
Source Resistance Source Inductance Drain-Source Resistance Drain-Source Capacitance Drain Resistance Drain Capacitance Drain Inductance Gate Bond Wire Inductance Gate Capacitance Gate Resistance Gate-Source Capacitance Channel Resistance Gate-Drain Capacitance Transconductance Transit Time
ORDERING INFORMATION
Chip Package Package MwT-S7 MwT-S771 MwT-S773 NOTE: Package information, please supplimentary application note from website www.mwtinc.com. When placing order inquiring, please specify range, wafer no., known, screening level required.
4268 Solar
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
rights reserved. MicroWave Technology, Inc. specifications subject change without notice.
MwT-S7
High Gain, Noise GaAs
MwT-S7 DUAL BIAS
Output Reference Plane Mils Long
Copper Heat Sink Mils Below Level Microstrip
MwT-S7 OPTIONAL BONDING
Output Reference Plane Mils Mils Long
Copper Heat Sink Mils Below Level Microstrip
Output Microstrip
Output Microstrip Mils
Mils
Mils
Mils Long Input Reference Plane Input Microstrip
Mils
Gold Ridge Mils each)
Mils Long Input Reference Plane Input Microstrip
Mils
Bond Wires Diameter
Gold Ridge Dual Bias, 25pF Caps Bond Wires Single Bias each)
Diameter
SAFE OPERATING LIMITS BACKSIDE CHIP
Absolute Maximum Continuous Maximum
150.0
75°C Lower
MAXIMUM RATINGS 25°C
SYMBOL PARAMETER UNITS CONT MAX1 ABSOLUTE MAX2
(mA)
100.0 50.0
75°C Lower
Drain Source Voltage Channel Temperature Storage Temperature Input Power
Safe Operating Limits +150 +175 +150 +175
NOTES: Exceeding these limits continuous operation reduce mean-time-to-failure below design goals. Exceeding these limits cause permanent damage.
TYPICAL NOISE PARAMETERS
MwT-S7LN Chip: VDS= 3.0V IDS= FREQUENCY 2.00 4.00 8.00 12.00 16.00 18.00 0.29 0.56 1.06 1.89 GAMMA ANGLE 0.68 0.49 0.41 0.49 0.55 0.58 Rn/50
NOISE FIGURE ASSOCIATED GAIN FREQUENCY
Associated Gain (dB)
NFopt (dB)
7074 7478
20.0 15.0 10.0 Frequency (GHz)
7882 8286 8690
0.188 0.182 0.165 0.152 0.143 0.14
9094
9498
SELECTION
BIN# IDSS (mA) 2630 3034 3438 3842 4246 4650 5054 5458 5862 6266 6670
ACCURACY STATEMENT When placing order inquiring, please specify range, wafer no., known, screening level required.
4268 Solar
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
rights reserved. MicroWave Technology, Inc. specifications subject change without notice.

High Gain, Noise GaAs DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM

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