Preliminary Data Sheet 09.97 T2333-XV12-P3-7600 Edition 09.9
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Mixer/Amplifier 2333 Version
Preliminary Data Sheet 09.97
T2333-XV12-P3-7600
Edition 09.97 Published Siemens Bereich Halbleiter, MarketingKommunikation, 81541 Siemens 1995. Rights Reserved. Attention please! patents other rights third parties concerned, liability only assumed components, applications, processes circuits implemented within components assemblies. information describes type component shall considered assured characteristics. Terms delivery rights change design reserved. questions technology, delivery prices please contact Semiconductor Group Offices Germany Siemens Companies Representatives worldwide (see address list). technical requirements components contain dangerous substances. information types question please contact your nearest Siemens Office, Semiconductor Group. Siemens approved CECC manufacturer. Packing Please recycling operators known you. also help touch with your nearest sales office. agreement will take packing material back, sorted. must bear costs transport. packing material that returned unsorted which obliged accept, shall have invoice costs incurred. Components used life-support devices systems must expressly authorized such purpose! Critical components1 Semiconductor Group Siemens only used life-support devices systems2 with express written approval Semiconductor Group Siemens critical component component used life-support device system whose failure reasonably expected cause failure that life-support device system, affect safety effectiveness that device system. Life support devices systems intended implanted human body, support and/or maintain sustain human life. they fail, reasonable assume that health user endangered.
Ausgabe 09.97 Herausgegeben Siemens Bereich Halbleiter, MarketingKommunikation, 81541 Siemens 1995. Alle Rechte vorbehalten. Wichtige Hinweise! Freiheit Rechten Dritter leisten Bauelemente selbst, nicht Anwendungen, Verfahren Bauelementen oder Baugruppen realisierten Schaltungen. Angaben werden Bauelemente spezifiziert, nicht Eigenschaften zugesichert. technische vorbehalten. Fragen Technik, Preise richten bitte Ihnen Vertrieb Halbleiter Deutschland oder unsere Landesgesellschaften Ausland. Bauelemente aufgrund technischer Erfordernisse Gefahrstoffe enthalten. bitten unter Angabe betreffenden Typs ebenfalls Vertrieb Halbleiter einzuholen. Siemens Hersteller CECCqualifizierten Produkten. Verpackung Bitte benutzen Ihnen bekannten Verwerter. helfen Ihnen auch weiter wenden sich Ihren Vertrieb Halbleiter. Nach nehmen Verpackungsmaterial sortiert Transportkosten tragen. Verpackungsmaterial, unsortiert wird oder keine haben, Ihnen anfallenden Kosten Rechnung stellen. Bausteine lebenserhaltenden oder Systemen zugelassen sein! Kritische Bauelemente1 Bereichs Halbleiter Siemens schriftlicher Genehmigung Bereichs Halbleiter Siemens lebenserhaltenden oder Systemen2 eingesetzt werden. kritisches Bauelement einem lebenserhaltenden oder System eingesetztes Bauelement, dessen Ausfall berechtigter Grund Annahme besteht, lebenserhaltende oder System bzw. dessen Sicherheit oder Wirksamkeit wird. Lebenserhaltende Systeme sind chirurgischen Einpflanzung menschlichen gedacht, oder bzw. erhalten menschliche Leben. Sollten ausfallen, besteht berechtigter Grund Annahme, Gesundheit Anwenders werden kann.
2333 Revision History: Previous Version: Page 06.96 Version) Page Version)
Current Version: 09.97 06.96 Subjects (major changes since last revision)
Supply Voltage 5.0V max. Input Voltage VLO/X 5.0V max. Input Voltage VAO+0.3V max. Input Voltage Peak min. Input Voltage -0.3V min. VS+0.3 max. Input Voltage VSTB 5.0V max. Open Collector Output Voltage VMO/X ->1.7V min. 5.0V max. Amplifier Current (Base, Peak) Amplifier Power dissipation PAMPtot 105mW Thermal Resistance RthJA 213K/W Thermal Resistance RthSO 160K/W Integrity Amplifier f=0.9GHz Amplifier f=1.8GHz Diagram Identical Values Printout Update Additional Application Information Correction Printing Mistakes
2333 Revision History: Previous Version: Page 11.95 Version) Page 06.96 Version)
Current Version: 06.96 11.95 Subjects (major changes since last revision)
Update RF/S-parameters becauce cavitiy change, correction printing mistakes, update application circuits
2333
Table Contents 3.1.1 3.1.2 3.1.3 3.1.4 3.2.1 3.2.2 3.2.3 3.3.1 3.3.2 3.3.3 3.3.4
Page
Overview Functional Description, Benefits Applications Configuration Definitions Functions Functional Block Diagram Circuit Description Electrical Characteristics Absolute Maximum Ratings Operational Range AC/DC Characteristics Test Circuits Application Data Receiver Application Shortform Data Measurement results Application hint Mixer metrics versus mixer current Circuit diagram layout Upconversion Application Shortform Data Measurement results Circuit diagram layout Receiver/SAW Application Shortform Data System calculations Measurement results Circuit diagram layout Package Outlines
Semiconductor Group
09.97
Mixer/Amplifier
2333
Version Overview Functional Description, Benefits
Bipolar
B6HF bipolar technology, 25GHz Small outline P-TSSOP package Reduced external components Frequency range 3.0GHz Amplifier used Driver mode typ. noise figure 1.8GHz typ. current consumption
P-TSSOP-16
Driver mode +12dBm output compression 20mA current consumption Gilbert cell mixer with high gain 4.5V voltage supply -40°C +85°C operational temperature range Standby function High isolation values amplifier mixer Good crosstalk performance Applications
Cellular radio systems Cordless telephone systems WLAN-Systems
Type 2333
Semiconductor Group
Version V1.2
Ordering Code Q67006-A6128
Package P-TSSOP-16
09.97
2333
Configuration
(top view)
AREF GND1 GND1
GND1
GND2
P-TSSOP16
Semiconductor Group
09.97
2333
Definitions Functions Symbol
AREF GND1 GND1 GND2 GND1
Function
Amplifier bias supply signal input Amplifier signal base input Amplifier ground Amplifier ground Mixer signal open collector output Mixer signal open collector output Voltage supply total circuit Mixer local oscillator signal base input, inverted Mixer local oscillator signal base input, inverted Mixer ground Mixer signal emitter input, inverted Mixer signal emitter input, inverted Standby mixer bandgap Amplifier ground Amplifier signal open collector output Amplifier gain control
Semiconductor Group
09.97
2333
Functional Block Diagram
GND1
GND2
Bias1
Amplifier
Bias
Bias2
Mixer
GND1
AREF
GND1
Semiconductor Group
09.97
2333
MIXER
Circuit Description
mixer used this design general purpose up-/down conversion gilbert cell mixer. pins MI/MIX enters Using external supplied local oscillator LO/LOX converted output signal created open collector output pins MO/MOX. open collector pins need connected external voltage supply. connection mixer inputs single ended balanced, capacitive inductive. improve mixer performance external resistors MI/MIX make possible adjust mixer current. Voltage supply mixer connected GND2. AMPLIFIER amplifier used noise amplifier driver. signal enters open collector output which need connected supply voltage, amplified signal external available further use. Matching networks in-/and output used improving gain noise performance. reduce series feedback emitter line amplifier connected ground three GND1 pins. AREF internal supplied reference voltage available biasing This output should implemented input matching network. voltage supply amplifier also VCC. dc-level allows adjust amplifier current. Lower current recommended using amplifier LNA, high current using driver. COMMON Differential signals symmetrical circuits used throughout mixer part internal bias driver generates supply voltage temperature compensated reference voltages. allows mixer bandgap part switched power mode. pins with exception GND1,2 AI/AO protected.
Semiconductor Group
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Electrical Characteristics Absolute Maximum Ratings
maximum ratings exceeded under circumstances, even momentarily individually, permanent damage will result. Ambient temperature Tamb -40°C.+85°C Parameter Symbol Limit Values
Supply Voltage Input Voltage Input Voltage VMI/MIX VLO/LOX -0.3 -0.3
Units
Remarks
VS+0.3 5.0max. VS+0.3 2.7max.
Freq.>1MHz
Input Voltage
-0.3
VAO+0.3 3.5max.
Input Voltage Peak) Input Voltage
-0.3
Input Voltage
VSTB
-0.3
VS+0.3 5.0max.
Output Voltage Open Collector Output Voltage
VAREF VMO/MOX
-0.3
VS+0.3 5.0max.
Open Collector Output Voltage Open Collector Output Voltage Amplifier Current (Collector) Amplifier Current (Base, Peak) Amplifier Power Dissipation Differential Input Voltage Junction Temperature
PAMPtot VIDIFF
-0.3 -0.3
Base open RB<50k
Semiconductor Group
09.97
2333
Absolute Maximum Ratings maximum ratings exceeded under circumstances, even momentarily individually, permanent damage will result. Ambient temperature Tamb -40°C.+85°C Parameter Symbol Limit Values
Storage Temperature Thermal Resistance Thermal Resistance integrity, pins without AI,AO GND1/2 RthJA RthSO VESD -500
Units
Remarks
Attention: exceed max. junction temperature Junction soldering point, simulated with according 883D, method 3015.7,and EOS/ESD assn. standard S5.1-1993
Semiconductor Group
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2333
Operational Range
Within operational range operates described circuit description. AC/DC characteristic limits guaranteed. Supply voltage VVCC 2.7V.4.5V, Ambient temperature Tamb -40°C.85°C
Parameter
Symbol
Limit Values
3000 3000 3000 3000
Units
Remarks
Input Frequency MI/X Input Frequency LO/X Input Frequency Intermediate Frequency Standby Voltage Standby Voltage Gain Control Voltage, High Gain Control Voltage,
Diagram Diagram
STBON STBOFF GCHigh GCLow
Note: Power levels refer Ohms impedance
Semiconductor Group
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2333
AC/DC Characteristics
AC/DC characteristics involve spread values guaranteed within specified supply voltage ambient temperature range. Typical characteristics median production. Supply voltage VVCC 2.7V.4.5V, Ambient temperature Tamb +25°C
Parameter
Symbol
Limit Values
Units Test Test Conditions Circuit
Supply Current
Supply current, total I5,6,7,15 23.6 external resistors MI/MIX* external resistors MI/MIX* OFF, GC=0V IAO=20 IAO=0
Supply current, total
I5,6,7,15
Supply current, total
I5,6,7,15
Minimum value external resistors MI/MIX: R1=R2=33Ohm
Semiconductor Group
09.97
2333
AC/DC Characteristics AC/DC characteristics involve spread values guaranteed within specified supply voltage ambient temperature range. Typical characteristics median production. Supply voltage VVCC 2.7V 4.5V, Ambient temperature Tamb +25°
Parameter
Symbol
Limit Values
Unit Test Test Conditions Circuit
AMPLIFIER-Driver, Signal Input IAO=20mA, VAO=3.3V, f=2.5GHz
Input impedance, freq. Max. input level, compression 10.0 Diagram f=2.5GHz f=2.5GHz
Input intercept, third order IICPDAI
AMPLIFIER-Driver, Signal Output IAO=20mA, VAO=3.3V, f=2.5GHz
Output current Output freq. impedance S21Amp +12.5 20.0 Diagram f=2.5GHz
Power gain
AMPLIFIER-Driver, Signal Input IAO=0mA, VAO=3.3V, f=2.5GHz
Input impedance, freq. Max. input change level, 20.0 Diagram f=2.5GHz f=2.5GHz
Input intercept, third order IICPAI
AMPLIFIER-Driver, Signal Output IAO=0mA, VAO=3.3V, f=2.5GHz
Output current Output freq. impedance S21Amp Diagram f=2.5GHz
Power gain
amplifier measurements have done with Siemens RT5880 Duroid (Teflon) Boards
Semiconductor Group
09.97
2333
AC/DC Characteristics AC/DC characteristics involve spread values guaranteed within specified supply voltage ambient temperature range. Typical characteristics median production. Supply voltage VVCC 2.7V 4.5V, Ambient temperature Tamb +25°
Parameter
Symbol
Limit Values
Unit Test Test Conditions Circuit
AMPLIFIER-LNA, Signal Input IAO=5mA, VAO=3.3V, f=1.8GHz Input impedance, freq. Diagram Max.input level, compression Input intercept, third order Noise figure IICPAI -12.0 f=1.8GHz f=1.8GHz f=1.8GHz
AMPLIFIER-LNA, Signal Output IAO=5mA, VAO=3.3V, f=1.8GHz Output current Power gain S21LNA 12.0 Diagram f=1.8GHz Output impedance freq.
AMPLIFIER-LNA, Signal Input IAO=0mA, VAO=3.3V, f=1.8GHz
Input impedance, freq. Max. input level, change Input intercept, third order IICPAI 20.0 Diagram f=1.8GHz f=1.8GHz
AMPLIFIER-LNA, Signal Output IAO=0mA, VAO=3.3V, f=1.8GHz
Output current Power gain S21A Diagram f=1.8GHz Output impedance freq.
measurements have done with Siemens RT5880 Duroid (Teflon) Boards
Semiconductor Group
09.97
2333
AC/DC Characteristics AC/DC characteristics involve spread values guaranteed within specified supply voltage ambient temperature range. Typical characteristics median production. Supply voltage VVCC 2.7V 4.5V, Ambient temperature Tamb +25°
Parameter
Symbol
Limit Values
Unit Test Test Conditions Circuit
MIXER, Signal Input MI/MIX, Upconversion, R1,2=33Ohm Input impedance .freq. Max. input level, compression Input intercept point IICP3MI Diagram fMI=0.66GHz fMI=0.66GHz
MIXER, Local Oscillator Input LO/LOX, Upconversion, R1,2=33Ohm Input impedance freq. Input level Diagram fLO=2.0GHz
MIXER, Signal Output MO/MOX, fout 2.66GHz, Upconversion, R1,2=33Ohm Output current IMO/X 10.4 with ext. resistors MI/MIX fMO=2.66GHz fMO=2.66GHz fMO=2.66GHz
Output resistance Output capacitance Power gain
RMODiff CMODiff
0.57
MIXER, Isolation Between In-/Output, fout 2.66GHz, Upconversion, R1,2=33Ohm ALO-MO ALO-MI AMO-MI AMO-LO
MI/MO Input/Output including matching network
Semiconductor Group
09.97
2333
AC/DC Characteristics AC/DC characteristics involve spread values guaranteed within specified supply voltage ambient temperature range. Typical characteristics median production. Supply voltage VVCC 2.7V 4.5V, Ambient temperature Tamb +25°
Parameter
Symbol
Limit Values
Unit Test Test Conditions Circuit
MIXER, Signal Input MI/MIX, Downconversion, R1,2=180Ohm Blocking level, f=800kHz, IF=45MHz Pin, wanted -20dBm Noise figure, (NFssbNFdsb+3dB) IF=45MHz Input intercept point, f=800kHz, 45MHz Input impedance .freq. Max. input level, compression MO/MOX, IF=45MHz IICP3MI IICP3MI IICP3MI Pin,unwan. PBL,unwan. PBL,unwan. Diagram f=0.9GHz f=1.8GHz f=2.5GHz f=0.9GHz f=1.8GHz f=2.5GHz f=0.9GHz f=1.8GHz f=2.5GHz f=0.9GHz f=1.8GHz f=2.5GHz
MIXER, Local Oscillator Input LO/LOX, Downconversion, R1,2=180Ohm Input impedance freq. Input level Diagram f=0.9GHz f=1.8GHz f=2.5GHz
matching network used referenced specified mixer performance
Semiconductor Group
09.97
2333
AC/DC Characteristics AC/DC characteristics involve spread values guaranteed within specified supply voltage ambient temperature range. Typical characteristics median production. Supply voltage VVCC 2.7V 4.5V, Ambient temperature Tamb +25°
Parameter
Symbol
Limit Values
Unit
Test Test Conditions Circuit
MIXER, Signal Output MO/MOX, Downconversion, R1,2=180Ohm Power gain, IF=300MHz Power gain, IF=45MHz Output capacitance Output current Output resistance IMO+MOX RMODiff RMODiff CMODiff CMODiff 0.36 0.39 incl. R1,R2 kOhm IF=45MHz kOhm IF=300MHz IF=45MHz IF=300MHz f=0.9GHz f=1.8GHz f=2.5GHz f=0.9GHz f=1.8GHz f=2.5GHz
MIXER, Isolation Between In-/Output, 0.9GHz, Downconversion, R1,2=180Ohm AMI-MO ALO-MO ALO-MI AMO-MI AMO-LO fMI=945MHz, fLO=900MHz
Semiconductor Group
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2333
Test Circuits
Test Circuit
Input
Toko Balun
TokoBalun
82nH Input 82nH
Output
2333
Bias Output
Bias
Input
Mixer/Driver Amplifier, Upconversion mode Test Circuit 1/MI 1/MO IF[MHz] 2660 L1[nH] C1[pF] C2[pF] C3[pF] CK[pF]
Semiconductor Group
09.97
2333
Test Circuit
Input
Toko Balun
Toko Balun
Input
2333
Toko Balun
Output
Vogt Transformer Kit, 0.05mm wire
Bias Output
Bias
Input
Mixer/Driver Amplifier, Downconversion mode Test Circuit IF[MHz] CB[pF] 15/100 CK[pF]
Semiconductor Group
09.97
2333
Test Circuit
Input
Toko Balun
TokoBalun
Output Input Toko Balun
2333
Bias Output
Bias
Input
Mixer/Driver Amplifier, Downconversion mode Test Circuit IF[MHz] L0[nH] L1[nH] C1[pF] C2[pF] C3[pF] CK[pF]
Semiconductor Group
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2333
Test Circuit
Port Network analyzer ZL=50Ohm Port
S-Parameter Measurement Amplifier S11, S12, S21,
S-Parameters tested indicated frequency Duroid 5880 Teflon Boards. capacitive coupling done. output levels port1 -30dbm. have considered design hints measured with SIEMENS testboards. Test Amp.S11, S12, S21, Test frequency 3000
Semiconductor Group
09.97
2333
Diagram S-Parameter Amplifier IAO=20mA, VCC=3.3V, f=30-3000MHz
0.05
0.15
Semiconductor Group
09.97
2333
Diagram3b S-Parameter Amplifier IAO=5mA, VCC=3.3V, f=30-3000MHz
0.15
0.05
Semiconductor Group
09.97
2333
S-Parameter Amplifier IAO=0mA, VCC=3.3V, f=30-3000MHz
Semiconductor Group
09.97
2333
Diagram Noise Circles Amplifier IAO=5mA, VCC=3.3V;f=0.9GHz
-170
-160
FMIN 1.055dB 10.17 GOPT 16.01mS BOPT -2.36mS 0.128 exp(j 34.4°)
Semiconductor Group
2.00 2.50 3.00
1.40 1.60
-100
-110
1.055 1.10 1.20
09.97
2333
Diagram Noise Circles Amplifier IAO=5mA, VCC=3.3V;f=1.8GHz
-170
1.60
-160
2.00
FMIN 1.278dB 7.52 GOPT 21.54mS BOPT -1.59mS 0.053 exp(j 136.2°)
Semiconductor Group
2.50 3.00
1.40
-100
-110
1.278 1.30
09.97
2333
Test Circuit
Network analyzer ZL=50Ohm
Port
Port
S-Parameter Measurement Mixer S11, S12, S21,
Test LO-Input impedance Mi-Input impedance MO-Output impedance
Test Frequency [MHz] 3000 3000 3000
S-Parameters tested indicated frequency equivalent parallel series circuit calculated this base. capacitive coupling done open collector pins connected VCC. output levels port1 -30dbm MOimpedances -5dbm impedance.S-Parameters have considered design hints measured with SIEMENS testboards.
Semiconductor Group
09.97
2333
Test Circuit Supply
Supply
Mixer Input Impedance Measurement Test Circuit Supply
5,6p 5,6p
680nH
5,6p
Mixer Local Oscilllator Impedance Measurement
Semiconductor Group
09.97
2333
Test Circuit
100n
Internal Bias Tees
Power Supply 3.3V
Mixer Output Impedance Measurement
Semiconductor Group
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2333
Diagram Mixer Input Impedance ZMI, IMO/MOX 10mA, f=30-3000MHz
Rdiff
Rsingle
Diagram Mixer Input Impedance ZMI, IMO/MOX 4mA, f=30-3000MHz
Rdiff
Rsingle
Semiconductor Group
09.97
2333
Diagram Mixer Input Impedance ZLO, IMO/MOX 10mA, f=30-3000MHz
Rsingle
Rdiff
Diagram Mixer Input Impedance ZLO, IMO/MOX 4mA, f=30-3000MHz
Rsingle
Rdiff
Semiconductor Group
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2333
Diagram
gain noise figure [dB] noise figure gain [mA]
09.97
Gain, Noise Figure versus Gain Control voltage Noise Figure values without correction attenuation input amplifier ->NFmin=1.7dB VGC=1.91V, amplifier current IAO=5mA, open collector voltage VAO=3.3V according test circuit f=1.8GHz).
Semiconductor Group
2333
3.1.1
Application Data Receiver Application Shortform Data
Measurement conditions Ambient temperature Supply voltage Mixer input signal 1960 MHz, signal 1735 MHz, output measurements refer connectors without consideration losses Parameter Mixer section Mixer current Conversion gain Noise Figure (DSB) order input intercept point 1dB-compression point Input blocking level Port matching return loss return loss return loss Isolations output ALO-IF 1735 |S11,RF| |S11,LO| |S11,IF| IMixer NFDSB IICP3 P1dB kHz, -3dB wanted signal IMO+IMOX Symbol min. Limit values typ. max. Unit Remarks
Semiconductor Group
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Measurement conditions Ambient temperature Supply voltage Mixer input signal 1960 MHz, signal 1735 MHz, output measurements refer connectors without consideration losses Parameter input Symbol min. ALO-RF Limit values typ. 12.5 max. assuming loss 0.25 typical noise figure matching circuit results 1.55 1735 fimage,min= 1480 fsignal,max= 1990 1960 Unit Remarks
input section current Gain Noise Figure
ARF-LO ILNA
order input intercept point 1dB-compression point return loss return loss
IICP3 P1dB |S11,AI| |S11,AO|
Semiconductor Group
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3.1.2
Measurement results
Mixer section
[dB] Noise Figure 1200 Conversion Gain
1400
1600
1800 2000 frequency [MHz]
2200
2400
Figure Conversion Gain Noise Figure versus Frequency
Conversion Gain [dB] Noise Figure power level [dBm]
Figure Conversion Gain Noise Figure versus power
Semiconductor Group 09.97
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Conversion Gain Noise Figure [dB]
frequency [MHz]
Figure Conversion Gain Noise Figure versus frequency
[dB] 1000
fully balanced unbalanced unbalanced LO+MI unbalanced
1500
2000 frequency [MHz]
2500
3000
Figure Isolation unbalanced case matching network replaced 10pF series capacitor port pin. other port tied ground second 10pF capacitor. This means power matching done.
Semiconductor Group 09.97
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[dB] 1000 1500 2000 frequency [MHz]
LO+MI unbalanced fully balanced unbalanced unbalanced
2500
3000
Figure Isolation
[dB] 1000
LO+MI unbalanced fully balanced unbalanced unbalanced
1500
2000 frequency [MHz]
2500
3000
Figure Isolation
Semiconductor Group
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section
Gain [dB] 1000 1500 2000 frequency [MHz] 2500 Noise Figure Gain
Noise Figure [dB] 3000
Figure Gain noise figure versus frequency
|S11| [dB] |S12| 1000 |S22|
1500
2000 frequency [MHz]
2500
3000
Figure Reverse isolation return loss versus frequency
Semiconductor Group
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3.1.3
Application hint Mixer metrics versus mixer current
Mixer current increased obtain higher Input Order Intercept (IIP3), higher Compression Point (P1dB), increased Conversion Gain (G). typical application, order increase mixer current from minimum level 800µA, added shown circuit diagram this section. These external resistors placed parallel existing bias resistors internal PMB2333, thereby reducing aggregate resistance emitters increasing current. current increased further reduction value mixer inputs begin suffer Loading' unless chokes used between MI/MIX pins (compare test circuit data presented this section, mixer current varied different manner. eliminate effects impedance variation (due Loading') caused changing values different mixer currents, these resistors were equal Mixer current then varied adjusting power supply voltage Note that take positive values with respect ground (e.g. 1mA) mixer currents, negative values higher currents.
2333 mixer
Figure Modified mixer input circuitry
Semiconductor Group
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Note that mixer input impedance seen strong function mixer current. mixer input balanced-to-unbalanced transformer/matching circuitry originally tuned current 4mA, re-optimized each other current levels. Despite this limitation, return loss port better than 10dB over entire current range. mixer output MOX) local oscillator LOX) ports exhibit negligible change impedance over this same current range. Measurement conditions: 4.5V 1960 1735 MHz, Effect Power Supply Voltage Mixer Metrics seeking improve Mixer Input Third-Order Intercept Compression Point, important understand constraints these parameters imposed power supply voltage. Refer Figure Receiver `Blocking' predominantly influenced Mixer's Compression Point (P1dB) Input Order Intercept Point (IIP3). supply voltage 4.5V, mixer P1dB (referred input application circuitry) increases with additional mixer current, begins flatten above 8mA. When supply voltage decreased 2.7V, mixer P1dB starts flattening around 5mA. Note how, 2.7V supply voltage, IIP3 continues increase currents over while P1dB flattens out. given conversion gain while operating Volts, considering only mixer's Input Order Intercept (IIP3) might lead falsely conclude that increasing current beyond improves receiver blocking. however, conversion gain decreased, possible improve receiver's blocking level with additional mixer current. shown Figure compression level, referred input, limited either current available voltage swing mixer output. transition between these regions takes place specified conversion gain supply voltage. Figure gives mixer noise figure versus mixer current.
Semiconductor Group
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[dB] [dBm] Mixer Current [mA]
IICP3 P1dB 2.7V P1dB 4.5V
Figure Mixer Input Intercept Point (IIP3), Compression Point (P1dB) Referred Input, Gain (G).
Noise Figure [dB]
mixer current [mA]
Figure Mixer Noise Figure
Semiconductor Group 09.97
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3.1.4
Circuit diagram layout
Figure Circuit diagram
Semiconductor Group 09.97
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dimensions: Substrate material: Substrate height:
Figure side
Semiconductor Group 09.97
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Figure bottom side
Semiconductor Group 09.97
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Figure component placement
Semiconductor Group 09.97
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List Components Item Quantity Reference C17, C10, C11, C12, C13, C14, C15, C18, Value Part SMD/0603 SMD/0603 SMD/0603 SMD/0603 SMD/0603 SMD/0603 SMD/0603
2333
SMD/0603 SMD/0603 SMD/0603 SMD/0603 SMD/A SMD/0603 SMD/0603 SMD/0603 SMD/0805 SMD/0805 SMD/0805 SMD/0805 SMD/0805 SMD/0805 Siemens
Tantalum
Murata LQP21A LQP11A Murata LQP21A LQP11A Murata LQP21A LQP11A Coilcraft 0805 Coilcraft 0805 Coilcraft 0805
connector connector
Stocko 1655-6-0-505 Suhner 50-0-41 Rosenberger 141-400A2
Semiconductor Group
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3.2.1
Upconversion Application Shortform Data
Measurement conditions Ambient temperature Supply voltage Mixer input signal MHz, signal 1717 MHz, Mixer output driver amplifier input signal 1907 Parameter Mixer section Mixer current Conversion gain order input intercept point 1dB-compression point Port matching return loss return loss return loss Isolations input output Driver section Driver current Gain order input intercept point 1dB-compression point IICP3 P1dB 11.0 13.1 +4.5 17mA 3.3V ARF-LO ALO-RF |S11,RF| |S11,LO| |S11,IF| IMixer IICP3 P1dB +3.5 Symbol min. Limit values typ. max. Unit Remarks
Semiconductor Group
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Measurement conditions Ambient temperature Supply voltage Mixer input signal MHz, signal 1717 MHz, Mixer output driver amplifier input signal 1907 Parameter return loss return loss 3.2.2 Symbol min. |S11,AI| |S11,AO| Limit values typ. max. Unit Remarks
Measurement results
gain [dB] 1800
1850
1900 frequency [MHz]
1950
2000
Figure Mixer conversion gain versus frequency
Semiconductor Group
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[dB] 1000 1500 2000 frequency [MHz] 2500 3000 |S11| |S12| |S22| |S21|
Figure Driver amplifier gain, reverse isolation, return loss versus frequency
[dB] 1000
1500
2000 frequency [MHz]
2500
3000
Figure Mixer isolations versus frequency
Semiconductor Group
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3.2.3
Circuit diagram layout
Figure Circuit diagram
Semiconductor Group 09.97
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dimensions: Substrate material: Substrate height:
Figure side
Semiconductor Group 09.97
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Figure bottom side
Semiconductor Group 09.97
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Figure Component placement side
Semiconductor Group 09.97
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Figure Component placement bottom side
Semiconductor Group 09.97
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Upconversion Application List Components Item Quantity Reference C11, C12, C13, C14, C18, C19, Value Part SMD/0603 SMD/0603 SMD/0603 SMD/0603 SMD/0603 SMD/0603 SMD/0603
2333
SMD/0603 SMD/0603 SMD/0603 SMD/A SMD/0603 SMD/0603 SMD/0603 SMD/0603 SMD/0603 SMD/0603 SMD/0805 SMD/0805 Siemens Stocko 1655-6-0-505 Suhner 50-0-41 Rosenberger 141-400A2 Murata LQP11A Coilcraft 0805 Coilcraft 0805 Tantalum
connector connector
Semiconductor Group
09.97
2333
3.3.1
Receiver/SAW Application Shortform Data
Measurement conditions Ambient temperature Supply voltage Mixer input signal MHz, signal MHz, output measurements refer connectors without consideration losses figures mixer section calculated from measurement filter mixer assuming insertion loss 3.1dB filter measurement frequency (890MHz). Parameter Mixer section Mixer current Conversion gain Noise Figure (SSB) order input intercept point input 1dB-compression point section current Gain Noise Figure order input intercept point input 1dB-compression point return loss return loss ILNA GLNA IICP3 P1dB |S11, |S11, 1.75 IMixer NFSSB IICP3 P1dB +6.5 IMO+IMOX Symbol
typ. Value
Unit
Remarks
Semiconductor Group
09.97
2333
Measurement conditions Ambient temperature Supply voltage Mixer input signal MHz, signal MHz, output measurements refer connectors without consideration losses figures mixer section calculated from measurement filter mixer assuming insertion loss 3.1dB filter measurement frequency (890MHz). Parameter Symbol
typ. Value
Unit
Remarks
Cascade figures LNA, resistive (see schematic), filter, mixer Cascade Gain Cascade Noise Figure (SSB) order input intercept point input 1dB-compression point IICP3 P1dB 3.35
Semiconductor Group
09.97
2333
3.3.2
System calculations
filter mixer input matching balancing isolated measurement mixer figures possible. following system calculations have valid entries only Gain, IP3, Noise Figure. input values either from extra measurements (e.g. filter insertion loss) adjusted give cascade figure that measured (e.g. filter+mixer IP3). non-fat typeface figures have meaning.
measurement
Hewlett-Packard NoiseCalc ++-+ Noise Figure (dB) 0.10 1.65 Gain (dB) -0.10 20.00 (dBm) 100.00 20.00 System Temp. 25.0 Input Power (dBm) -30.0 Pout (dBm) -30.1 -10.1 Cascade (dB) 1.75 Noise Temperature 143.9 Signal-to-Noise Ratio (dB) 82.2 Spur Free Dynamic Range (dB) 74.9 Nominal Detectable (dBm) -112.2 AppCAD
Reference Temperature Noise Bandwidth (MHz) Cascade Gain (dB) Input Intercept Point (dBm) Output Intercept Point (dBm) Output Level (dBm)
25.0 1.00000 19.90 20.0 -70.3
loss 2333
Semiconductor Group
09.97
2333
filter Mixer
Hewlett-Packard NoiseCalc ++-+ Noise Figure (dB) 3.10 12.00 Gain (dB) -3.10 4.50 (dBm) 100.00 11.00 System Temp. 25.0 Input Power (dBm) -30.0 Pout (dBm) -33.1 -28.6 Cascade (dB) 15.10 Noise Temperature 9094.2 Signal-to-Noise Ratio (dB) 68.9 Spur Free Dynamic Range (dB) 72.3 Nominal Detectable (dBm) -98.9 AppCAD
Reference Temperature Noise Bandwidth (MHz) Cascade Gain (dB) Input Intercept Point (dBm) Output Intercept Point (dBm) Output Level (dBm)
25.0 1.00000 1.40 11.0 -107.8
filter B4672 2333 Mixer
Overall figures
Hewlett-Packard NoiseCalc AppCAD ++-+ Noise Figure (dB) 0.10 1.65 3.10 3.10 12.00 Gain (dB) -0.10 20.00 -3.10 -3.10 4.50 (dBm) 200.00 20.00 200.00 40.00 11.00 System Temp. 25.0 Reference Temperature 25.0 Input Power (dBm) -30.0 Noise Bandwidth (MHz) 1.00000 Pout (dBm) -30.1 -10.1 -13.2 -16.3 -11.8 Cascade (dB) 3.35 Cascade Gain (dB) 18.20 Noise Temperature 337.0 Input Intercept Point (dBm) -7.9 Signal-to-Noise Ratio (dB) 80.7 Output Intercept Point (dBm) 10.3 Spur Free Dynamic Range (dB) 68.5 Output Level (dBm) -55.9 Nominal Detectable (dBm) -110.6
loss 2333 Resistive pad, 3.1dB attenuation filter B4672 2333 Mixer
Semiconductor Group
09.97
2333
3.3.3
Measurement results
Cascaded figure measurements
gain [dB] image response frequency [MHz] gain 1000 noise figure [dB] noise figure [dB]
Figure Cascade gain, noise figure versus frequency
conversion gain [dB] power level [dBm] gain
Figure Cascade gain, noise figure versus power
Semiconductor Group
09.97
2333
|S11,
1000 frequency [MHz] 1500 2000
Figure input return loss versus frequency
Semiconductor Group
09.97
2333
3.3.4
Circuit diagram layout
Figure Circuit diagram
Semiconductor Group 09.97
2333
dimensions: Substrate material: Substrate height:
Figure side
Semiconductor Group 09.97
2333
Figure bottom side
Semiconductor Group 09.97
2333
Figure component placement
Semiconductor Group 09.97
2333
Figure component placement bottom
Semiconductor Group 09.97
2333
Receiver/SAW Application List Components Item Quantity Reference C16, C10, C12, C14, C15, C19, C24, C11, FIL1 Value Part SMD/0603 SMD/0603 SMD/0603 SMD/0603 SMD/0603 SMD/0603 SMD/0603
2333 B4672
SMD/0603 SMD/0603 SMD/A SMD/0603 SMD/0603 SMD/0603 SMD/0603 SMD/0603 SMD/0603 SMD/0603 SMD/0603 SMD/0603 SMD/0805 SMD/0805 Siemens
Tantalum
Toko LL1608-FH Toko LL1608-FH Toko LL1608-FH Toko LL1608-FH Toko LL1608-FH Toko LL1608-FH
connector connector
Stocko 1655-6-0-505 Suhner 50-0-41 Rosenberger 141-400A2
Semiconductor Group
09.97
2333
Package Outlines P-TSSOP-16 (Plastic Package)
Sorts Packing Package outlines tubes, trays etc. contained Data Book "Package Information". Surface Mounted Device Semiconductor Group
Dimensions 09.97
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