Gauge PowerAssist Applications Accurate measurement available cha
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bq2013H
Gauge PowerAssist Applications
Accurate measurement available charge rechargeable batteries Designed electric assist bicycles other applications Measures wide dynamic current range Supports NiCd, NiMH lead acid Designed battery pack integration
General Description
bq2013H Gauge intended battery-pack installation maintain accurate record battery's available charge. monitors voltage drop across sense resistor connected series between negative battery terminal ground determine charge discharge activity battery. bq2013H designed high cpaacity battery packs used high-discharge rate systems. Battery self-discharge estimated based internal timer temperature sensor. Compensations battery temperature, rate charge, self-discharge applied charge counter provide available capacity information across wide range operating conditions. Initial battery capacity, self-discharge rate, display mode, charge compensation using PROG1-6 pins. Actual battery capacity automatically "learned" course discharge cycle from full empty.
Nominal available charge directly indicated using five-segment display. These segments used graphically indicate nominal available charge. bq2013H supports simple single-line bi-directional serial link external processor (common ground). bq2013H outputs battery information response external commands over serial link. support battery pack testing, outputs also controlled command. external processor also overwrite some bq2013H gauge data registers. bq2013H operate directly from four nickel cells three lead acid. With output external transistor, simple, inexpensive regulator built provide from greater number cells. Internal registers include available charge, temperature, capacity, battery battery status.
120µA typical standby current (self-discharge estimation mode) Small size enables implementations little square inch
Direct drive LEDs capacity display char discharge compensation using internal temperature sensor Simple single-wire serial communications port subassembly testing 16-pin narrow SOIC
Connections
LCOM SEG1/PROG1 SEG2/PROG2 SEG3/PROG3 SEG4/PROG4 SEG5PROG5 PROG6
Names
DONE DISP
LCOM SEG1/PROG1 SEG2/PROG2 SEG3/PROG3 SEG4/PROG4 SEG5/PROG5
common output segment Program input segment Program input segment Program input segment Program input segment Program input Program input
DONE DISP
Voltage reference output Fast charge complete input Serial communications input/output Register backup input Battery sense input Display control input Sense resistor input Supply voltage
16-Pin Narrow SOIC
PN2013.eps
PROG6
SLUS120-MAY 1999 REVISED JANUARY 2004
bq2013H
Descriptions
LCOM common This open-drain output switches source current LEDs. switch during initialization allow reading PROG1-5 pull-up pull-down program resistors. LCOM also high impedance when display off. SEG1- SEG5 display segment outputs (dual function with PROG1-PROG5 Each output activate sink current sourced from LCOM. PROG1- PROG6 Programmed full count selection inputs (dual function with SEG1 SEG5) These three-level input pins define programmed full-count (PFC), display mode, self-discharge rate, offset compensation, overload threshold, charge compensation. Sense resistor input voltage drop (VSR) across sense resistor monitored integrated over time interpret charge discharge activity. input (see Figure connected between negative terminal battery ground. indicates charge, indicates discharge. effective voltage drop, VSRO, seen bq2013H VOS. DONE Charge complete input This input/output used communicate status external charge controller bq2013H. DISP Display control input DISP pulled high disables display. DISP floating allows display active during certain charge discharge conditions. Transitioning DISP activates display. Secondary battery input This input monitors scaled battery voltage through high-impedance resistive divider network end-of-discharge voltage (EDV) thresholds. Register backup input This input used provide backup potential bq2013H registers during periods when storage capacitor connected RBI. Serial This open-drain bidirectional communications port. Voltage reference output regulator provides voltage reference output optional micro-regulator. Supply voltage input Ground
bq2013H Functional Description
General Operation
bq2013H determines battery capacity monitoring amount charge input removed from rechargeable battery. bq2013H measures discharge charge currents, estimates self-discharge, monitors battery low-battery voltage thresholds, compensates temperature charge rates. charge measurement made monitoring voltage across small-value series sense resistor between battery's negative terminal ground. available battery charge determined monitoring this voltage over time correcting measurement environmental operating conditions. Figure shows typical battery pack application bq2013H using display. bq2013H configured display capacity either relative absolute display mode. relative display mode uses last measured discharge capacity battery battery "full" reference. absolute display mode uses programmed full count (PFC) full reference, forcing each segment display represent fixed amount charge. push-button display feature available enabling display. bq2013H monitors charge discharge currents voltage across sense resistor (see Figure filter between negative battery terminal required.
bq2013H Gauge
ZVNL110A
LCOM SEG1/PROG1 SEG2/PROG2 SEG3/PROG3 SEG4/PROG4 SEG5/PROG5 DISP
100K 0.1µF
Fast Charger
Notes:
PROG6 DONE
Charger
Indicates optional.
battery stack voltage directly connect across nickel cells (4.8V nominal should exceed 6.5V) with resistor zener diode limit voltage during charge. Otherwise, R1and needed regulation nickel cells. Programming resistors ESD-protection diodes shown. required.
Load
FG2013H1.eps
Figure Application Diagram: Display
bq2013H
Register Backup
bq2013H input intended used with storage capacitor provide backup potential internal bq2013H registers when momentarily drops below 3.0V. output when above 3.0V. After rises above 3.0V, bq2013H checks internal registers data loss corruption. data changed, then register cleared, register loaded with initial PFC.
Temperature
bq2013H internally determines temperature 10°C steps centered from -35°C +85°C. temperature steps used adapt charge rate compensations self-discharge counting. temperature range available over serial port 10°C increments shown following table: TMPGG (hex) Temperature Range -30°C -30°C -20°C -20°C -10°C -10°C 10°C 10°C 20°C 20°C 30°C 30°C 40°C 40°C 50°C 50°C 60°C 60°C 70°C 70°C 80°C 80°C
Voltage Thresholds
conjunction with monitoring charge/discharge currents, bq2013H monitors battery potential through end-of-discharge voltage (EDV) thresholds. threshold levels used determine when battery reached "empty" state. thresholds bq2013H follows: EDV1 (first) 1.00V EDVF (final) EDV1 100mV battery voltage divider (RB1 Figure used scale these values desired threshold. below either thresholds specified delay times Table associated flag latched remains latched, independent VSB, until next valid charge. monitoring disabled OVLD FLGS2 set.
Layout Considerations
bq2013H measures voltage differential between pins. (the offset voltage pin) greatly affected board layout. optimal results, board layout should follow strict rule single-point ground return. Sharing high-current ground with small signal ground causes undesirable noise small signal nodes. Additionally:
Table Delay Time Seconds
Capacity Temperature 10°C 10°C 30°C 30°C
capacitors should placed close possible pins their paths should short possible. high-quality ceramic capacitor 0.1µf recommended VCC. sense resistor (RS) should close possible bq2013H. should located close possible pin. maximum should exceed 100K.
Reset
bq2013H reset removing grounding seconds with command over serial port. serial port reset command sequence requires writing register PPFC (address leh) writing register (address 05h.)
Gauge Operation
operational overview diagram Figure illustrates operation bq2013H. bq2013H accumulates measure charge discharge currents, well estimation self-discharge. bq2013H compensates charge current charge rate tem-
bq2013H
perature. Discharge current load compensated based value stored location LCOMP (address 0eh). LCOMP allows bq2013H automatically adjust continuous small discharge currents. bq2013H compensates self discharge load value well temperature. main counter, Nominal Available Capacity (NAC), represents available battery capacity given time. Battery charging increments register, while battery discharging, self-discharge decrement register increment (Discharge Count Register). also corrected automatically offset error based value offset location OFFSET (address 0bh.) Discharge Count Register (DCR) used update Last Measured Discharge (LMD) register only complete battery discharge from full empty occurs without partial battery charges. Therefore, bq2013H adapts capacity determination based actual conditions discharge. battery's initial capacity equal Programmed Full Count (PFC) shown Table Until updated, counts beyond this threshold during subsequent charges. This approach allows gauge charger-independent compatible with type charge regime. Last Measured Discharge (LMD) learned battery capacity: last measured discharge capacity battery. initialization (application battery replacement), PFC. During subsequent discharges, updated with latest measured capacity Discharge Count Register (DCR) representing discharge from full below EDV. maximum decrease because update LMD. qualified discharge necessary capacity transfer from register. also serves 100% reference threshold used relative display mode. Programmed Full Count (PFC) initial battery capacity: initial gauge rate values programmed using PFC. also provides 100% reference absolute display mode. bq2013H configured given application selecting value from Table correct determined multiplying rated battery capacity sense resistor value: Battery capacity (mAh) sense resistor (mVh) Selecting slightly less than rated capacity absolute mode provides capacity above full reference much battery's life.
Charge Current Rate Temperature Compensation Discharge Current Self-Discharge Timer Load Temperature Compensation
Inputs
Load Compensation
Main Counters Capacity Reference (LMD)
Nominal Available Charge (NAC) (offset corrected)
Last Measured Discharged (LMD)
Discharge Count Qualified Register (DCR) Transfer
Temperature Translation
Temperature Step, Other Data
Outputs
Chip-Controlled Available Charge Display
Serial Port
FG2013H2.eps
Figure Operational Overview
bq2013H
Example: Selecting Value Given: Sense resistor 0.0075 Number cells Capacity 5000mAh, NiCd cells Current range Relative display mode with second timer Self-discharge Trickle charge compensation 0.85 Typical offset -75µV Voltage drop across sense resistor Select: 44,800 counts 35mVh PROG1, PROG2 PROG3 PROG4 PROG5 PROG6 Therefore: 5000mAh 0.0075 37.5mVh
Table bq2013H Programmed Full Count Selections
Programmed Full Count (PFC) 27136 24064 41472 35072 28672 44800 30720 38400 12800
84.8 75.2 64.8 54.8 44.8
Scale
PROG1
PROG2
1280
1280
2560
2560
Table Programmed Self-Discharge
PROG3 Self-Discharge 1.6% 0.8% 0.2%
bq2013H
Table Programmed Display Mode
PROG4 Overload Threshold VOVLD -75mV VOVLD -75mV VOVLD -25mV Display Mode Relative/4s timer after push-button release Relative/4s timer after push-button release Absolute/4s timer after push-button release
Table Programmed Charge Compensation
Trickle PROG5 <30°C 0.80 1.00 0.85 30°C-50°C 0.75 1.00 0.80 >50°C 0.70 1.00 0.75 <30°C 0.95 1.00 0.95 30°C-50°C 0.90 1.00 0.90 >50°C 0.85 1.00 0.85 Fast
Table Programmed Discharge Offset Adjustment
PROG6 Offset -150µV -75µV
bq2013H
initial full battery capacity 35mVh (4667mAh) until bq2013H "learns" capacity with qualified discharge from full EDV1. Nominal Available Capacity (NAC): counts during charge maximum value down during discharge self discharge reset initialization first valid charge following discharge EDV1. prevent overstatement charge during periods overcharge, stops incrementing when LMD. When DONE input asserted high, indicating full charge completion, LMD. Discharge Count Register (DCR): counts during discharge independent could continue increasing after decremented Prior (empty battery), both discharge self-discharge increment DCR. After only discharge increments DCR. resets when LMD. does roll over stops counting when reaches FFFFh. value becomes value first charge after valid discharge EDV1 following conditions met:
Discharge Counting
discharge counts where VSRO -250µV cause register decrement increment. enabled, display activated when VSRO -2mV. display remains active seconds after VSRO rises above 2mV.
Self-Discharge Estimation
bq2013H decrements increments self-discharge based time temperature. selfdischarge count rate programmed Table This rate battery temperature between 20-30°C. register cannot decremented below
Count Compensations
bq2013H determines fast charge when updates rate counts/s. Charge activity compensated temperature rate before updating NAC. Self-discharge estimation compensated temperature before updating DCR.
Charge Compensation
Charge efficiency factors selected using Table trickle charge fast charge. Fast charge defined rate charge resulting counts/s (0.16C 0.6C, depending selections; Table Temperature adapts charge rate compensation factors over three ranges between nominal, warm, temperatures. Program used select three compensation programs. These values shown Table
valid charge initiations (charges greater than updates) occurred during period between EDV1. self-discharge count less than NAC. temperature when EDV1 level reached during discharge. set.
Charge Counting
Charge activity detected based positive voltage input. charge activity detected, bq2013H increments rate proportional VSRO (VSR VOS) and, enabled, activates display VSRO 500µV. Charge actions increment after compensation charge rate temperature. bq2013H detects charge activity with VSRO 250µV. valid charge equates sustained charge activity greater than updates. Once valid charge detected, charge counting continues until VSRO drops below 250µV.
bq2013H
Self-Discharge Compensation
self-discharge compensation programmed three different rates. rates vary across ranges from <10°C >70°C, doubling with each higher temperature step (10°C). Table fast-charge completion, bq2013H sets DONE input should maintained oller microcontroller keeps batteries full; otherwise should held low.
Table Self-Discharge Compensation
Self-Discharge Compensation Typical Rate/Day PROG3
Communicating With bq2013
bq2013H includes simple single-pin (HDQ plus return) serial data interface. host processor uses interface access various bq2013H registers. Battery characteristics easily monitored adding single contact battery pack. open-drain bq2013H should pulled host system, left floating serial interface used. interface uses command-based protocol, where host processor sends command byte bq2013H. command directs bq2013H either store next eight bits data received register specified command byte output eight bits data specified command byte. (See Figure communication protocol asynchronous return-to-one. Command data bytes consist stream eight bits that have maximum transmission rate bits/s. least-significant command data byte transmitted first. protocol simple enough that implemented most host processors using either polled interrupt processing. Data input from bq2013H sampled using pulse-width capture timers available some microcontrollers. communication error occurs, e.g., tCYCB 250µs, bq2013H should sent BREAK reinitiate serial interface. BREAK detected when driven logic-low state time, greater. should then returned normal ready-high logic state time, tBR. bq2013H ready receive command from host processor. return-to-one data frame consists three distinct sections. first section used start transmission either host bq2013H taking logic-low state period, tSTRH;B. next section actual data transmission, where data should valid period, tDSU;B, after negative edge used start communication. data should held period, tDH;DV, allow host bq2013H sample data bit. final section used stop transmission returning logic-high state least period, tSSU;B, after negative edge used start communication. final logic-high state should until period tCYCH;B, allow time ensure that transmission stopped properly. timings data break communication given serial com-
Temperature PROG3 Range 10°C 10-20°C 20-30°C 30-40°C 40-50°C 50-60°C 60-70°C 70°C
PROG3
2048 1024
Offset Compensation
bq2013H uses voltage frequency converter measure voltage across resistor used monitor current into battery. This converter offset value that influenced supply bypassing this supply. typical value found well designed about -75µV. Program used compensate this offset, reducing effective VOS. Offset compensation occurs when VSRO -250µV VSRO 250µV.
Error Summary
susceptible error initialization updates occur. initialization, value includes error between programmed full capacity actual capacity. This error present until valid discharge occurs updated (see description "Layout Considerations" section). other cause error battery wear-out. battery ages, measured capacity must adjusted account changes actual battery capacity.
DONE Input
fast-charge controller micro-controller uses DONE input communicate charge status bq2013H. When DONE input asserted high
bq2013H
Table bq2013H Current-Sensing Errors
Symbol Parameter Integrated non-linearity error Integrated nonrepeatability error Typical Maximum Units Notes 0.1% above below 25°C volt above below 4.25V. Measurement repeatability given similar operating conditions.
munication timing specification illustration sections. Communication with bq2013H always performed with least-significant being transmitted first. Figure shows example communication sequence read bq2013H NACH register.
location Command Code Bits
bq2013H Command Code Registers
bq2013H status registers listed Table described below.
Where bq2013H outputs requested register contents specified address portion command code. following eight bits should written register specified address portion command code.
Command Code
bq2013H latches command code when eight valid command bits have been received bq2013H. command code register contains fields:
lower seven-bit field command code contains address portion register accessed. Attempts write invalid addresses ignored. Command Code Bits (LSB)
Command address
command code used select whether received command read write function.
Written Host bq2013H CMDR
Received Host from bq2013H
Break
tRSPS
TD2013H.eps
Figure Typical Communication With bq2013H
bq2013H
Table bq2013H Command Status Registers
Symbol Register Name Loc. Read/ (hex) Write 7(MSB) CHGS TMP3 Control Field TMP2 RSVD TMP1 RSVD TMP0 RSVD EDV1 0(LSB) EDVF
Primary status FLGS1 flags register TMPGG NACH Temperature gauge register Nominal available capacity high byte register Nominal available capacity byte register
NACH7 NACH6 NACH5 NACH4 NACH3 NACH2 NACH1 NACH0
NACL
NACL7 NACL6 NACL5 NACL4 NACL3 NACL2 NACL1 NACL0
Battery BATID identification register Last measured discharge register
BATID7 BATID6 BATID5 BATID4 BATID3 BATID2 BATID1 BATID0 LMD7 RSVD RSVD OFS7 SDR7 DMF7 RSVD VSB7 LMD6 RSVD RSVD RSVD OFS6 SDR6 DMF6 RSVD VSB6 LMD5 RSVD PPD6 PPU6 OFS5 SDR5 DMF5 RSVD VSB5 LMD4 RSVD PPD5 PPU5 OFS4 SDR4 DMF4 RSVD VSB4 LMD3 RSVD PPD4 PPU4 OFS3 SDR3 DMF3 RSVD VSB3 LMD2 RSVD PPD3 PPU3 OFS2 SDR2 DMF2 RSVD VSB2 LMD1 RSVD PPD2 PPU2 OFS1 SDR1 DMF1 RSVD VSB1 LMD0 OVLD PPD1 PPU1 OFS0 SDR0 DMF0 RSVD VSB0
FLGS2 Secondary status flags register OCTL Program pull down register Program pull register Output control register
OFFSET Offset adjustment regisiter Self discharge rate Digital magnitude filter
LCOMP Load compensation CCOMP PPFC Notes: Fast charge compensation Program data Battery voltage register
RSVD reserved. other registers documented reserved.
bq2013H
Primary Status Flags Register (FLGS1)
FLGS1 register (address=01h) contains primary bq2013H flags. charge status flag (CHGS) asserted when valid charge rate detected. bq2013H deems charge valid results updates with VSRO 250µV. VSRO less than 250µV discharge activity clears CHGS. CHGS location FLGS1 Bits CHGS location FLGS1 Bits
where Self-discharge reduces valid charge action detected, EDV1 asserted with temperature less than 0°C, reset first discharge after
where CHGS Either discharge activity detected VSRO 250µV updates with VSRO 250µV
first end-of-discharge warning flag (EDV1) warns user that battery empty. SEG1 blinks rate DONE asserted low. EDV1 detection disabled OVLD flag latched until valid charge been detected. EDV1 location FLGS1 Bits EDV1
battery replaced flag (BRP) asserted whenever bq2013H reset application serial port command. reset when either valid charge action increments equal LMD, when valid charge action detected after EDV1 flag asserted. signifies that device been reset. location FLGS1 Bits
where EDV1 Valid charge action detected VEDV1 VEDV1 delay time, provided that OVLD
where bq2013H charged until first charge after discharge which sets EDV1 flag bq2013H reset
final end-of-discharge warning flag (EDVF) flag used warn that battery power failure condition. segment drivers turned off. EDVF flag latched until valid charge been detected. EDVF threshold 100mV below EDV1 threshold. EDVF location FLGS1 Bits EDVF
valid discharge flag (VDQ) asserted when bq2013H discharged from NAC=LMD. flag remains until either updated until three actions that clear occurs:
Where EDVF Valid charge action detected VEDVF VEDVF, providing OVLD
been reduced more than during because self-discharge since valid charge action sustained VSRO VSRQ least updates EDV1 flag temperature below 0°C.
bq2013H
Table Temperature Register Contents
TMP3 TMP2 TMP1 TMP0 Temperature -30°C -30°C -20°C -20°C -10°C -10°C 10°C 10°C 20°C 20°C 30°C 30°C 40°C 40°C 50°C 50°C 60°C 60°C 70°C 70°C 80°C 80°C TMPGG Gauge Bits
Nominal Available Charge Register (NAC)
NACH register (address=03h) NACL register (address=17h) main gauging registers bq2013H. registers incremented during charge actions decremented during discharge self-discharge actions. correction factors charge/discharge efficiency applied automatically NAC. NACH NACL during bq2013H reset.
Battery Identification Register (BATID)
read/write BATID register (address=04h) available system determine type battery pack. BATID contents retained long VRBI greater than contents BATID have effect operation bq2013H. There default setting this register.
Last Measured Discharge Register (LMD)
read/write register (address=05h) that bq2013H uses measured full reference. bq2013H adjusts based measured discharge capacity battery from full empty. this bq2013H updates capacity battery. during bq2013H reset.
Temperature Gauge Register (TMPGG)
TMPGG Temperature Bits TMP3 TMP2 TMP1 TMP0
Secondary Status Flags Register (FLGS2)
read-only FLGS2 register (address=06h) contains secondary bq2013H flags. charge rate flag (CR) used denote fast charge regime. Fast charge assumed whenever charge action initiated. flag remains asserted charge rate does fall below counts/s. location FLGS2 Bits
read-only TMPGG register (address=02h) contains data fields. first field contains battery temperature. second field contains available charge from battery. bq2013H contains internal temperature sensor. temperature used charge efficiency factors well adjust self-discharge coefficient. temperature register contents translated shown Table bq2013H calculates available charge function full reference, either PFC. results calculation available display port gauge field TMPGG register. register used give available capacity increments from
Where When charge rate falls below counts/sec When charge rate above counts/sec
fast charge regime efficiency factors used when When trickle charge efficiency fac-
bq2013H
tors used. time change varies user-selectable count rates. overload flag (OVLD) asserted when discharge overload detected. PROG4 defines overload threshold, defined Table OVLD remains asserted long condition valid. OVLD location FLGS2 Bits OVLD tion. cleared either writing logic zero serial port resetting bq2013H.
Offset Adjustment Register
value this register (address 0bh) used correct offset VFC. This register initialized from state PROG6. following initial values:
offset correction -75µV correction -150µV correcton
Where OVLD VSRO VOVLD VSRO VOVLD
value equation: Offset VCOS
Program Pull-Down Register (PPD)
register (address=07h) contains some programming information bq2013H. program pins have corresponding location, PPD1-6. given location pull-down resistor been detected corresponding segment driver. example, PROG1 PROG4 have pull-down resistors, contents xx001001. PPD/PPU Bits
where VCOS desired offset correction volts.
Self-Discharge Rate Compensation
This register contains value used correct self-discharge compensation. This value initialized from state PROG3. following initial values:
1.6% 0.8% 0.2%
RSVD RSVD PPU6 PPU5 PPU4 PPU3 PPU2 PPU1 RSVD RSVD PPD6 PPD5 PPD4 PPD3 PPD2 PPD1
value equation: 0.3296 where self-discharge rate day.
Program Pull-Up Register (PPU)
register (address=08h) contains rest programming information bq2013H. program pins have corresponding location, PPU1-6. given location pull-up resistor been detected corresponding segment driver. example, PROG3 PROG5 have pull-up resistors, contents xx010100.
Digital Magnitude Filter (DMF)
read-write register (address=0dh) provides system with means change default settings digital magnitude filter. writing different values into this register, limits VSRD VSRQ adjusted. default value 250µV. value equation: VSRD,
Output Control Register (OCTL)
write-only OCTL register (address=0ah) provides system with means check display connections bq2013H. segment drivers overwritten data from OCTL when OCTL, OCE, set. data bits OC5-1 OCTL register (see Table details) output onto segment pins, SEG5-1, respectively OCE=1. Whenever written OCTL should register location must cleared return bq2013H normal opera-
where VSRD,Q desired filter threshold Note: Care should taken when writing this register. VSRD VSRQ below specified adversely affect accuracy bq2013H.
bq2013H
Load Compensation
load compensation value (address 0eh) allows bq2013H compensate small discharge loads that below digital filter. Each increment LCOMP register represents 2µVh. value LCOMP represents additional amount discharge applied constant rate when VSRO VSRQ. LCOMP compensation applied addition selfdischarge. LCOMP full reset. value equation: LCOMP VCLD where VCLD desired load correction volts. 1.2V
Display
bq2013H directly display capacity information using low-power LEDs. LEDs used, segment pins should tied VCC, battery, LCOM through resistors programming bq2013H. bq2013H displays battery charge state either absolute relative mode. relative mode, battery charge represented percentage LMD. Each segment represents LMD. absolute mode, each segment represents fixed amount charge, based initial PFC. absolute mode, each segment represents PFC. battery wears over time, possible below initial PFC. this case, LEDs turn representing reduction actual battery capacity. When DISP tied VCC, SEG1-5 outputs inactive. When DISP left floating, display becomes active during charge registers counting rate equivalent VSRO 500µV fast discharge registers counting rate equivalent VSRO -2mV. When DISP pulled held, segment outputs become active continuously. When released high segment outputs will remain active seconds. segment outputs modulated banks, with segments alternating with segments segment outputs modulated approximately 320Hz, with each bank active period. SEG1 blinks rate whenever been detected below VEDV1 indicate low-battery condition less than PFC, depending display mode.
Charge Compensation
charge-compensation value (address 0fh) allows bq2013H compensate battery charge inefficiencies. This value initialized from state PROG5 represents fast-charge compensation factor 30°C. value overwritten serial port stored percent. bq2013H scales value determine compensation other rates temperatures. example, PROG5 applied efficiency drops each temperature range, trickle rates below fastcharge rates. value (85%) written CCOMP, compensation trickle charge 50°C 60%.
Program Data (PPFC)
PPFC register provides means perform software controlled reset device. recommended reset method bq2013H
Write PPFC zero Write zero
After these operations, software reset occurs. Resetting bq2013H sets following:
Microregulator
bq2013H operate directly from nickel lead acid cells. facilitate power supply requirements bq2013H, output provided regulate external low-threshold n-FET. micropower source bq2013H inexpensively built using external resistor.
VDQ, OCE, LCOMP,
Battery Voltage Register (VSB)
battery voltage register used read battery voltage pin. register (address 7eh) updated approximately once second with present value battery voltage. battery voltage determined equation:
bq2013H
Absolute Maximum Ratings
Symbol other pins TOPR Note: Parameter Relative Relative Relative Relative Operating temperature Minimum -0.3 -0.3 -0.3 -0.3 Maximum +7.0 +7.0 +8.5 Vcc+0.7 Unit Current limited (see Figure 100k series resistor should used protect case shorted battery. Commercial Notes
Permanent device damage occur Absolute Maximum Ratings exceeded. Functional operation should limited Recommended Operating Conditions detailed this data sheet. Exposure conditions beyond operational limits extended periods time affect device reliability.
Voltage Thresholds TOPR; 6.5V)
Symbol VEDV VSRO VSRQ VSRD Note: Parameter End-of-discharge warning sense range Valid charge Valid discharge Minimum 0.96 VEDV -300 Typical VEDV Maximum 1.04 VEDV +500 -250 Unit Notes
affected board layout. Proper layout guidelines should followed optimal performance. "LayoutConsiderations."
bq2013H
Electrical Characteristics TOPR)
Symbol VREF RREF RSBmax IDISP ILCOM IRBI RHDQ VIHPFC VILPFC VIZPFC VOLSL VOLSH VOHML VOHMH IOLS VIHDQ VILDQ RPROG RFLOAT Note: Parameter Supply voltage Offset referred Reference 25°C Reference -40°C +85°C Reference input impedance Normal operation Battery input input impedance DISP input leakage LCOM input leakage data-retention current Internal pulldown input impedance PROG logic input high PROG logic input PROG logic input output low, output low, high LCOM output high, LCOM output high, high sink current Open-drain sink current Open-drain output input high input DONE input high DONE input Soft pull-up pull-down resistor value (for programming) Float state external impedance voltages relative VSS. Minimum -0.2 float 11.0 Typical 4.25 Maximum ±150 float Unit -200mV PROG1-6 PROG1-6 PROG1-6 IOLS 1.75mA SEG1-SEG5, DONE 6.5V, IOLS 11.0mA SEG1-SEG5, DONE IOHLCOM -5.25mA 3.5V, IOHLCOM -33.0mA VOLSH 0.4V, 6.5V 0.3V, 5mA, DONE DONE PROG1-6 PROG1-6 VDISP DISP VRBI Notes excursion from 2.0V 3.0V initializes unit. DISP IREF IREF VREF 3.0V, 4.25V, 6.5V,
bq2013H
High-Speed Serial Communication Timing Specification TOPR)
Symbol tCYCH tCYCB tSTRH tSTRB tDSU tDSUB tSSU tSSUB tRSPS Note: Parameter Cycle time, host bq2013H (write) Cycle time, bq2013H host (read) Start hold, host bq2013H (write) Start hold, bq2013H host (read) Data setup Data setup Data hold Data valid Stop setup Stop setup Response time, bq2013H host Break Break recovery Minimum Typical Maximum Unit Notes note
open-drain should pulled least host system proper operation. left floating serial interface used.
bq2013H
Break Timing
TD201803.eps
Host bq2013H
Write Write tSTRH tDSU tSSU tCYCH
bq2013H Host
Read Read tSTRB tDSUB tSSUB tCYCB
bq2013H
16-Pin SOIC Narrow (SN)
16-Pin (SOIC Narrow)
Dimension Minimum 0.060 0.004 0.013 0.007 0.385 0.150 0.045 0.225 0.015 dimensions inches. Maximum 0.070 0.010 0.020 0.010 0.400 0.160 0.055 0.245 0.035
.004
bq2013H
Data Sheet Revision History
ChangeNo. Note: Page Description Change "Final" changes from "Preliminary" version Updated application diagram Changed charge/discharge default threshold from 200µV 250µV. Changed offset compensation window range from ±200µV ±250µV Designated appropriate locations from "R/W" Changed charge threshold from 200µV 250µV Changed default from 200µV 250µV Added absolute maximum rating Changed charge/discharge default threshold from 200µV 250µV Added VSRO parameter Changed designation Changed from 0.5V 0.3V (max.) Added RPROG
Change Dec. 1998 changes from July 1998 "Preliminary." Change 1999 changes from Dec. 1998.
bq2013H
Ordering Information
bq2013H
Temperature Range:
blank Commercial +70°C)
Package Option:
16-pin narrow SOIC
Device:
bq2013H Gauge
Notes
PACKAGE OPTION ADDENDUM
www.ti.com
8-Mar-2005
PACKAGING INFORMATION
Orderable Device BQ2013HSN-A514 BQ2013HSN-A514TR
Status ACTIVE ACTIVE
Package Type SOIC SOIC
Package Drawing
Pins Package Plan 2500 None None
Lead/Ball Finish NIPDAU NIPDAU
Peak Temp Level-1-220C-UNLIM Level-1-220C-UNLIM
marketing status values defined follows: ACTIVE: Product device recommended designs. LIFEBUY: announced that device will discontinued, lifetime-buy period effect. NRND: recommended designs. Device production support existing customers, does recommend using this part design. PREVIEW: Device been announced production. Samples available. OBSOLETE: discontinued production device.
Plan currently available please check latest availability information additional product content details. None: available Lead (Pb-Free). Pb-Free (RoHS): TI's terms "Lead-Free" "Pb-Free" mean semiconductor products that compatible with current RoHS requirements substances, including requirement that lead exceed 0.1% weight homogeneous materials. Where designed soldered high temperatures, Pb-Free products suitable specified lead-free processes. Green (RoHS Sb/Br): defines "Green" mean "Pb-Free" addition, uses package materials that contain halogens, including bromine (Br) antimony (Sb) above 0.1% total product weight.
MSL, Peak Temp. Moisture Sensitivity Level rating according JEDECindustry standard classifications, peak solder temperature. Important Information Disclaimer:The information provided this page represents TI's knowledge belief date that provided. bases knowledge belief information provided third parties, makes representation warranty accuracy such information. Efforts underway better integrate information from third parties. taken continues take reasonable steps provide representative accurate information have conducted destructive testing chemical analysis incoming materials chemicals. suppliers consider certain information proprietary, thus numbers other limited information available release. event shall TI's liability arising such information exceed total purchase price part(s) issue this document sold Customer annual basis.
Addendum-Page
IMPORTANT NOTICE Texas Instruments Incorporated subsidiaries (TI) reserve right make corrections, modifications, enhancements, improvements, other changes products services time discontinue product service without notice. Customers should obtain latest relevant information before placing orders should verify that such information current complete. products sold subject TI's terms conditions sale supplied time order acknowledgment. warrants performance hardware products specifications applicable time sale accordance with TI's standard warranty. Testing other quality control techniques used extent deems necessary support this warranty. Except where mandated government requirements, testing parameters each product necessarily performed. assumes liability applications assistance customer product design. Customers responsible their products applications using components. minimize risks associated with customer products applications, customers should provide adequate design operating safeguards. does warrant represent that license, either express implied, granted under patent right, copyright, mask work right, other intellectual property right relating combination, machine, process which products services used. Information published regarding third-party products services does constitute license from such products services warranty endorsement thereof. such information require license from third party under patents other intellectual property third party, license from under patents other intellectual property Reproduction information data books data sheets permissible only reproduction without alteration accompanied associated warranties, conditions, limitations, notices. Reproduction this information with alteration unfair deceptive business practice. responsible liable such altered documentation. Resale products services with statements different from beyond parameters stated that product service voids express implied warranties associated product service unfair deceptive business practice. responsible liable such statements. Following URLs where obtain information other Texas Instruments products application solutions: Products Amplifiers Data Converters Interface Logic Power Mgmt Microcontrollers amplifier.ti.com dataconverter.ti.com dsp.ti.com interface.ti.com logic.ti.com power.ti.com microcontroller.ti.com Applications Audio Automotive Broadband Digital Control Military Optical Networking Security Telephony Video Imaging Wireless Mailing Address: Texas Instruments Post Office 655303 Dallas, Texas 75265 Copyright 2005, Texas Instruments Incorporated www.ti.com/audio www.ti.com/automotive www.ti.com/broadband www.ti.com/digitalcontrol www.ti.com/military www.ti.com/opticalnetwork www.ti.com/security www.ti.com/telephony www.ti.com/video www.ti.com/wireless
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