CMOS Dual Complementary Pair Plus Inverter Pinout CD4007UBMS
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CD4007UBMS
CMOS Dual Complementary Pair Plus Inverter
Pinout
CD4007UBMS VIEW
DRAIN SOURCE GATES SOURCE DRAIN GATES
Features
High-Voltage Type (20V Rating) Standardized Symmetrical Output Characteristics Medium Speed Operation tPHL, tPLH (typ) 100% Tested Maximum Quiescent Current Meets Requirements JEDEC Tentative Standards 13B, "Standard Specifications Description Series CMOS Devices" Maximum Input Current Over Full Package-Temperature Range; 100nA +25oC
VDD,
SUBSTRATES, Q1(P) DRAIN
SOURCE DRAIN, SOURCE DRAIN GATES SOURCE DRAIN
VSS, SUBSTRATES SOURCE
Applications
Extremely High-Input Impedance Amplifiers Shapers Inverters Threshold Detector Linear Amplifiers Crystal Oscillators
Functional Diagram
Description
CD4007BMS types comprised three n-channel three p-channel enhancement-type transistors. transistor elements accessible through package terminals provide convenient means constructing various typical circuits shown Figure More complex functions possible using multiple packages. Numbers shown parentheses indicate terminals that connected together form various configurations listed. CD4007BMS supplied these lead outline packages: Braze Seal Frit Seal Ceramic Flatpack
TERMINAL TERMINAL
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. 1-888-INTERSIL 321-724-7143 Copyright Intersil Corporation 1999
File Number
3291
7-666
Specifications CD4007UBMS
Absolute Maximum Ratings
Supply Voltage Range, (VDD) -0.5V +20V (Voltage Referenced Terminals) Input Voltage Range, Inputs .-0.5V +0.5V Input Current, Input .±10mA Operating Temperature Range -55oC +125oC Package Types Storage Temperature Range (TSTG) -65oC +150oC Lead Temperature (During Soldering) +265oC Distance 1/16 1/32 Inch (1.59mm 0.79mm) from case Maximum
Reliability Information
Thermal Resistance Ceramic FRIT Package 80oC/W 20oC/W Flatpack Package 70oC/W 20oC/W Maximum Package Power Dissipation (PD) +125 -55oC +100oC (Package Type 500mW +100oC +125oC (Package Type Derate Linearity 12mW/oC 200mW Device Dissipation Output Transistor 100mW Full Package Temperature Range (All Package Types) Junction Temperature +175oC
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP SUBGROUPS 18V, Input Leakage Current Input Leakage Current Output Voltage Output Voltage Output Current (Sink) Output Current (Sink) Output Current (Sink) Output Current (Source) Output Current (Source) Output Current (Source) Output Current (Source) Threshold Voltage Threshold Voltage Functional VOL15 VOH15 IOL5 IOL10 IOL15 IOH5A IOH5B IOH10 IOH15 VNTH VPTH 15V, Load 15V, Load (Note VOUT 0.4V 10V, VOUT 0.5V 15V, VOUT 1.5V VOUT 4.6V VOUT 2.5V 10V, VOUT 9.5V 15V, VOUT 13.5V 10V, -10µA 10µA 2.8V, 20V, 18V, Input Voltage (Note Input Voltage High (Note Input Voltage (Note Input Voltage High (Note 4.5V, 0.5V 4.5V, 0.5V 15V, 13.5V, 1.5V 15V, 13.5V, 1.5V LIMITS TEMPERATURE
PARAMETER Supply Current
SYMBOL
CONDITIONS (NOTE 20V,
-100 -1000 -100
1000 -0.53 -1.8 -1.4 -3.5 -0.7
UNITS
+125oC -55oC +25o
+125oC -55oC +25oC +125oC -55oC +25oC, +125oC, -55oC
+25oC, +125oC, -55oC 14.95 +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +125oC -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC 12.5 0.53 -2.8
VDD/2 VDD/2
NOTES: voltages referenced device GND, 100% testing being implemented. Go/No test with limits applied inputs
accuracy, voltage measured differentially VDD. Limit 0.050V max.
7-667
Specifications CD4007UBMS
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP SUBGROUPS TEMPERATURE +25oC +125oC, -55oC LIMITS UNITS
PARAMETER Propagation Delay
SYMBOL TPHL TPLH TTHL TTLH
CONDITIONS (NOTE
Transition Time
+25oC +125oC, -55oC
NOTES: 50pF, 200K, Input 20ns. 55oC +125oC limits guaranteed, 100% testing being implemented. TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current SYMBOL CONDITIONS NOTES TEMPERATURE +125 10V, -55oC, +25oC +125oC 15V, -55oC, +25oC +125oC Output Voltage Output Voltage Output Voltage Output Voltage Output Current (Sink) IOL5 Load 10V, Load Load 10V, Load VOUT 0.4V +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +125oC -55oC Output Current (Sink) IOL10 10V, VOUT 0.5V +125 -55oC Output Current (Sink) IOL15 15V, VOUT 1.5V +125oC -55oC Output Current (Source) IOH5A VOUT 4.6V +125oC -55oC Output Current (Source) IOH5B VOUT 2.5V +125oC -55oC Output Current (Source) IOH10 10V, VOUT 9.5V +125oC -55oC Output Current (Source) IOH15 =15V, VOUT 13.5V +125oC -55oC Input Voltage Input Voltage High Propagation Delay TPHL TPLH 10V, 10V, +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC +25oC
4.95 9.95 0.36 0.64
0.25 -0.36 -0.64 -1.15 -2.0 -0.9 -1.6 -2.4 -4.2
UNITS
7-668
Specifications CD4007UBMS
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) LIMITS PARAMETER Transition Time SYMBOL TTHL TTLH CONDITIONS Input NOTES TEMPERATURE +25oC +25oC
15.0
UNITS
Input Capacitance NOTES:
voltages referenced device GND. parameters listed Table controlled design process directly tested. These parameters characterized initial design release upon design changes which would affect these characteristics. 50pF, 200K, Input 20ns. TABLE POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current Threshold Voltage Threshold Voltage Delta Threshold Voltage Threshold Voltage Delta Functional SYMBOL VNTH VNTH VPTH VPTH CONDITIONS 20V, 10V, -10µA 10V, -10µA 10µA 10µA 18V, Propagation Delay Time TPHL TPLH +25oC NOTES TEMPERATURE +25oC +25oC +25oC +25oC +25oC
-2.8 VDD/2
-0.2 VDD/2 1.35 +25oC Limit
UNITS
NOTES: voltages referenced device GND. 50pF, 200K, Input 20ns.
Table +25oC limit. Read Record
TABLE BURN-IN LIFE TEST DELTA PARAMETERS +25OC PARAMETER Supply Current Output Current (Sink) Output Current (Source) SYMBOL IOL5 IOH5A ±0.1µA Pre-Test Reading Pre-Test Reading DELTA LIMIT
TABLE APPLICABLE SUBGROUPS CONFORMANCE GROUP Initial Test (Pre Burn-In) Interim Test (Post Burn-In) Interim Test (Post Burn-In) (Note Interim Test (Post Burn-In) (Note Final Test Group Group Subgroup Subgroup MIL-STD-883 METHOD 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 Sample 5005 Sample 5005 Sample 5005 GROUP SUBGROUPS Deltas Deltas Deltas Subgroups IDD, IOL5, IOH5A READ RECORD IDD, IOL5, IOH5A IDD, IOL5, IOH5A IDD, IOL5, IOH5A
7-669
Specifications CD4007UBMS
TABLE APPLICABLE SUBGROUPS (Continued) CONFORMANCE GROUP Group MIL-STD-883 METHOD Sample 5005 GROUP SUBGROUPS READ RECORD Subgroups
NOTE: Parameteric, Functional; Cumulative Static
TABLE TOTAL DOSE IRRADIATION MIL-STD-883 METHOD 5005 TEST PRE-IRRAD POST-IRRAD Table READ RECORD PRE-IRRAD POST-IRRAD Table
CONFORMANCE GROUPS Group Subgroup
TABLE BURN-IN IRRADIATION TEST CONNECTIONS OSCILLATOR FUNCTION Static Burn-In Note Static Burn-In Note Dynamic BurnIn Note Irradiation Note NOTE: Each except will have series resistor ±5%, ±0.5V Each except will have series resistor Group Subgroup sample size dice/wafer, failures, ±0.5V OPEN GROUND -0.5V 50kHz 25kHz
Schematic Diagram
*CMOS INPUT
PROTECTION NETWORK
OUTPUT TERMINAL
PARASITIC NETWORK COMPONENTS WELL SUBSTRATE
**CMOS OUTPUT PROTECTION
NETWORK BETWEEN TERMINAL NOS. CORRESPONDING DRAINS AND/OR SOURCES
FIGURE DETAILED SCHEMATIC DIAGRAM CD4007UBMS SHOWING INPUT, OUTPUT, PARASITIC DIODES
7-670
CD4007UBMS Logic Circuits
(13, 11); (12,
(14, 11); 13);
13); 11);
TRIPLE INVERTERS
INPUT GATE
INPUT NAND GATE
(13, (14, (VDD) (VSS)
#ALL UNIT SUBSTRATES CONNECTED UNIT SUBSTRATES CONNECTED
TREE (RELAY) LOGIC
(OPTIONAL PULL-UP)
10); (13, 12); (14, 11); 10); 12); (11, 14); (OPTIONAL PULL-DOWN)
HIGH SINK-CURRENT DRIVER
HIGH SOURCE-CURRENT DRIVER
CLOCK (OUT)
OUT1 (IN1)
OUT2 (IN2)
10); (14, 11); (13,
12); (11, 10);
HIGH SINK SOURCE-CURRENT DRIVER
DUAL BI-DIRECTIONAL TRANSMISSION GATING
FIGURE SAMPLE CMOS LOGIC CIRCUIT ARRANGEMENTS USING TYPE CD4007UBMS
7-671
CD4007UBMS Typical Performance Characteristics
AMBIENT TEMPERATURE (TA) +25oC SINGLE INPUT ONLY INPUTS ONLY THREE INPUTS OTHER INPUT SWITCHES AMBIENT TEMPERATURE (TA) +25oC OUTPUT VOLTAGE (VO) SUPPLY VOLTAGE (VDD)
OUTPUT VOLTAGE (VO)
SUPPLY VOLTAGE (VDD)
SINGLE INPUT ONLY INPUTS ONLY THREE INPUTS OTHER INPUT
12.5 INPUT VOLTAGE (VI)
10.0 12.5 INPUT VOLTAGE (VI)
15.0
FIGURE TYPICAL VOLTAGE-TRANSFER CHARACTERISTICS NAND GATE
AMBIENT TEMPERATURE (TA) +25oC
FIGURE TYPICAL VOLTAGE-TRANSFER CHARACTERISTICS GATE
OUTPUT (SINK) CURRENT (IOL) (mA)
AMBIENT TEMPERATURE (TA) +25oC OUTPUT VOLTAGE (VO) DRAIN-TO-SOURCE VOLTAGE (VDS) GATE-TO-SOURCE VOLTAGE (VGS) SUPPLY VOLTAGE (VDD) 15.0 12.5 10.0
10.0 12.5 INPUT VOLTAGE (VI)
15.0
FIGURE TYPICAL OUTPUT (SINK) CURRENT CHARACTERISTICS
AMBIENT TEMPERATURE (TA) +25oC 15.0 OUTPUT VOLTAGE (VO) 12.5 10.0 10.0 12.5 15.0 INPUT VOLTAGE (VI) TERM 10.0 SUPPLY VOLTAGE (VDD)
FIGURE MINIMUM MAXIMUM VOLTAGE-TRANSFER CHARACTERISTICS INVERTER
12.5
OUTPUT (SINK) CURRENT (IOL) (mA)
AMBIENT TEMPERATURE (TA) +25oC
SUPPLY MILLIAMPERES (ID)
15.0 GATE-TO-SOURCE VOLTAGE (VGS) 12.5 10.0
DRAIN-TO-SOURCE VOLTAGE (VDS)
FIGURE TYPICAL CURRENT VOLTAGE-TRANSFER CHARACTERISTICS INVERTER
FIGURE MINIMUM OUTPUT (SINK) CURRENT CHARACTERISTICS
7-672
CD4007UBMS Typical Performance Characteristics
DRAIN-TO-SOURCE VOLTAGE (VDS) AMBIENT TEMPERATURE (TA) +25oC GATE-TO-SOURCE VOLTAGE (VGS)
(Continued)
DRAIN-TO-SOURCE VOLTAGE (VDS) OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) AMBIENT TEMPERATURE (TA) +25oC GATE-TO-SOURCE VOLTAGE (VGS)
OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)
-10V
-10V
-15V
-15V
FIGURE TYPICAL OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS
FIGURE MINIMUM OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS
PROPAGATION DELAY TIME (tPLH, tPHL) (ns) AMBIENT TEMPERATURE (TA) +25oC SUPPLY VOLTAGE (VDD)
OUTPUT VOLTAGE (VO)
SUPPLY VOLTAGE (VDD) =125oC -55oC -55oC 125oC
125oC
-55oC
INPUT VOLTAGE (VI)
LOAD CAPACITANCE (CL) (pF)
FIGURE TYPICAL VOLTAGE-TRANSFER CHARACTERISTICS FUNCTION TEMPERATURE
FIGURE TYPICAL PROPAGATION DELAY TIME LOAD CAPACITANCE
AMBIENT TEMPERATURE (TA) +25oC DISSIPATION GATE (PD) (µW) SUPPLY VOLTAGE (VDD) LOAD CAPACITANCE (CL) 15pF (CL) 50pF
AMBIENT TEMPERATURE (TA) +25oC TRANSITION TIME (fTHL, fTLH) (ns)
SUPPLY VOLTAGE (VDD)
LOAD CAPACITANCE (CL) (pF)
INPUT FREQUENCY (fi) (Hz)
FIGURE TYPICAL TRANSISTION TIME LOAD CAPACITANCE
FIGURE TYPICAL DISSIPATION FREQUENCY CHARACTERISTICS
7-673
CD4007UBMS Chip Dimension Layout
Dimensions parentheses millimeters derived from basic inch dimensions indicated. Grid graduations mils (10-3 inch)
METALLIZATION: PASSIVATION:
Thickness:
Silane
BOND PADS: 0.004 inches 0.004 inches THICKNESS: 0.0198 inches 0.0218 inches
Intersil semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
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