CMOS Buffer/Converter CD4050BMS non-inverting buffer features log
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CD4050BMS
CMOS Buffer/Converter
CD4050BMS non-inverting buffer features logic level conversion using only supply voltage (VCC). input signal high level (VIH) exceed supply voltage when this device used logic level conversions. This device intended CMOS DTL/TTL converters drive directly DTL/TTL loads. (VCC 0.4V, 3.3mA. CD4050BMS designated replacement CD4010B. Because CD4050BMS requires only power supply, preferred over CD4010B should used place CD4010B inverter, current driver, logic level conversion applications. these applications CD4050BMS compatible with CD4010B, substituted this device existing well designs. Terminal connected internally CD4050BMS, therefore, connection this terminal consequence circuit operation. applications requiring high sink current voltage conversion, CD4069UB Inverter recommended. CD4050BMS supplied these lead outline packages: Braze Seal Frit Seal Ceramic Flatpack
Features
High Voltage Type (20V Rating) Non-Inverting Type High Sink Current Driving Loads High-to-Low Level Logic Conversion 100% Tested Quiescent Current Maximum Input Current Over Full Package Temperature Range; 100nA +25oC Parametric Ratings
Applications
CMOS DTL/TTL Converter CMOS Current "Sink" "Source" Driver CMOS High-to-Low Logic Level Converter
Pinout
CD4050BMS VIEW
Functional Diagram
Schematic Diagram
FIGURE SCHEMATIC DIAGRAM, IDENTICAL UNITS
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. www.intersil.com 407-727-9207 Copyright Intersil Corporation 1999
CD4050BMS
Absolute Maximum Ratings
Supply Voltage Range, (VDD) -0.5V +20V (Voltage Referenced Terminals) Input Voltage Range, Inputs -0.5V +0.5V Input Current, Input. .±10mA Operating Temperature Range -55oC +125oC Package Types Storage Temperature Range (TSTG). -65oC +150oC Lead Temperature (During Soldering) +265oC Distance 1/16 1/32 Inch (1.59mm 0.79mm) from case Maximum
Reliability Information
Thermal Resistance. Ceramic FRIT Package 80oC/W 20oC/W Flatpack Package 70oC/W 20oC/W Maximum Package Power Dissipation (PD) +125oC -55oC +100oC (Package Type .500mW +100oC +125oC (Package Type Derate Linearity 12mW/oC 200mW Device Dissipation Output Transistor. .100mW Full Package Temperature Range (All Package Types) Junction Temperature .+175oC
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP SUBGROUPS 18V, Input Leakage Current Input Leakage Current Output Voltage Output Voltage Output Current (Sink) Output Current (Sink) Output Current (Sink) Output Current (Sink) Output Current (Source) Output Current (Source) Output Current (Source) Output Current (Source) Threshold Voltage Threshold Voltage Functional VOL15 VOH15 IOL4 IOL5 IOL10 IOL15 IOH5A IOH5B IOH10 IOH15 VNTH VPTH 15V, Load 15V, Load (Note 4.5V, VOUT 0.4V VOUT 0.4V 10V, VOUT 0.5V 15V, VOUT 1.5V VOUT 4.6V VOUT 2.5V 10V, VOUT 9.5V 15V, VOUT 13.5V 10V, -10µA 10µA 2.8V, 20V, 18V, Input Voltage (Note Input Voltage High (Note Input Voltage (Note Input Voltage High (Note 4.5V, 0.5V 4.5V, 0.5V 15V, 13.5V, 1.5V 15V, 13.5V, 1.5V LIMITS TEMPERATURE +25oC +125oC -55oC +25oC +125oC -55oC +25oC +125oC -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +125oC -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC -100 -1000 -100 14.95 -2.8 1000 -0.8 -3.2 -1.8 -6.0 -0.7 UNITS
PARAMETER Supply Current
SYMBOL
CONDITIONS (NOTE 20V,
VDD/2 VDD/2
NOTES: voltages referenced device GND, 100% testing being implemented. Go/No test with limits applied inputs.
accuracy, voltage measured differentially VDD. Limit 0.050V max.
CD4050BMS
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP SUBGROUPS Propagation Delay TPLH Transition Time TTHL Transition Time TTLH NOTES: 50pF, 200K, Input 20ns. -55oC +125oC limits guaranteed, 100% testing being implemented. TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current SYMBOL CONDITIONS NOTES TEMPERATURE -55oC, +25oC +125oC 10V, -55oC, +25oC +125oC 15V, -55oC, +25oC +125oC Output Voltage Output Voltage Output Voltage Output Voltage Output Current (Sink) IOL4 Load 10V, Load Load 10V, Load 4.5V, VOUT 0.4V +25oC, +125oC, 55oC +25oC, +125oC, 55oC +25oC, +125oC, 55oC +25oC, +125oC, 55oC +125oC -55oC Output Current (Sink) IOL5 VOUT 0.4V +125oC -55oC Output Current (Sink) IOL10 10V, VOUT 0.5V +125oC -55oC Output Current (Sink) IOL15 15V, VOUT 1.5V +125oC -55oC Output Current (Source) IOH5A VOUT 4.6V +125oC -55oC Output Current (Source) IOH5B VOUT 2.5V +125oC -55oC Output Current (Source) IOH10 10V, VOUT 9.5V +125oC -55oC Output Current (Source) IOH15 =15V, VOUT 13.5V +125oC -55oC 4.95 9.95 -0.48 -0.81 -1.55 -2.6 -1.18 -2.0 -3.1 -5.2 UNITS LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC UNITS
PARAMETER Propagation Delay
SYMBOL TPHL
CONDITIONS (NOTE
CD4050BMS
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) LIMITS PARAMETER Input Voltage Input Voltage High Propagation Delay SYMBOL TPHL CONDITIONS 10V, 10V, 10V, 10V, Propagation Delay TPLH 10V, 10V, Propagation Delay TPHL 15V, 15V, Propagation Delay TPLH 15V, 15V, Transition Time TTHL 10V, 15V, Transition Time TTLH 10V, 15V, Input Capacitance NOTES: voltages referenced device GND. parameters listed Table controlled design process directly tested. These parameters characterized initial design release upon design changes which would affect these characteristics. 50pF, 200K, Input 20ns. TABLE POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current Threshold Voltage Threshold Voltage Delta Threshold Voltage Threshold Voltage Delta Functional SYMBOL VNTH CONDITIONS 20V, 10V, -10µA 10V, -10µA 10µA 10µA 18V, Propagation Delay Time TPHL TPLH +25oC NOTES TEMPERATURE +25oC +25oC +25oC +25oC +25oC +25oC -2.8 VDD/2 -0.2 VDD/2 1.35 +25oC Limit UNITS Input NOTES TEMPERATURE +25oC, +125oC, 55oC +25oC, +125oC, 55oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC UNITS
NOTES: voltages referenced device GND. 50pF, 200K, Input 20ns.
Table +25oC limit. Read Record
TABLE BURN-IN LIFE TEST DELTA PARAMETERS +25OC PARAMETER Supply Current MSI-1 Output Current (Sink) Output Current (Source) SYMBOL IOL5 IOH5A 0.2µA Pre-Test Reading Pre-Test Reading DELTA LIMIT
CD4050BMS
TABLE APPLICABLE SUBGROUPS CONFORMANCE GROUP Initial Test (Pre Burn-In) Interim Test (Post Burn-In) Interim Test (Post Burn-In) (Note Interim Test (Post Burn-In) (Note Final Test Group Group Group Subgroup Subgroup MIL-STD-883 METHOD 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 Sample 5005 Sample 5005 Sample 5005 Sample 5005 GROUP SUBGROUPS Deltas Deltas Deltas Subgroups Subgroups IDD, IOL5, IOH5A READ RECORD IDD, IOL5, IOH5A IDD, IOL5, IOH5A IDD, IOL5, IOH5A
NOTE: Parametric, Functional; Cumulative Static TABLE TOTAL DOSE IRRADIATION MIL-STD-883 METHOD 5005 TEST PRE-IRRAD POST-IRRAD Table READ RECORD PRE-IRRAD POST-IRRAD Table
CONFORMANCE GROUPS Group Subgroup
TABLE BURN-IN IRRADIATION TEST CONNECTIONS OSCILLATOR FUNCTION Static Burn-In (Note Static Burn-In (Note Dynamic Burn-In (Note Irradiation (Note NOTES: Each except will have series resistor 0.5V Each except will have series resistor Group Subgroup sample size dice/wafer, failures, 0.5V Each except will have series resistor 4.75K 0.5V OPEN GROUND 7-9, 11-14 -0.5V 50kHz 25kHz
Typical Performance Characteristics
OUTPUT (SINK) CURRENT (IOL) (mA) AMBIENT TEMPERATURE (TA) +25oC SUPPLY VOLTAGE (VCC) OUTPUT VOLTAGE (VO) AMBIENT TEMPERATURE (TA) +25oC GATE-TO-SOURCE VOLTAGE (VGS)
MINIMUM MAXIMUM
INPUT VOLTAGE (VI) DRAIN-TO-SOURCE VOLTAGE (VDS)
FIGURE MINIMUM MAXIMUM VOLTAGE TRANSFER CHARACTERISTICS
FIGURE TYPICAL OUTPUT (SINK) CURRENT CHARACTERISTICS
CD4050BMS Typical Performance Characteristics
OUTPUT (SINK) CURRENT (IOL) (mA) AMBIENT TEMPERATURE (TA) +25oC GATE-TO-SOURCE VOLTAGE (VGS) -10V -15V GATE-TO-SOURCE VOLTAGE (VGS)
(Continued)
DRAIN-TO-SOURCE VOLTAGE (VDS)
OUTPUT HIGH (SINK) CURRENT (IOH) (mA)
AMBIENT TEMPERATURE (TA) +25oC
DRAIN-TO-SOURCE VOLTAGE (VDS)
FIGURE MINIMUM OUTPUT (SINK) CURRENT DRAIN CHARACTERISTICS
DRAIN-TO-SOURCE VOLTAGE (VDS)
FIGURE TYPICAL OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS
SUPPLY VOLTAGE (VCC)
OUTPUT HIGH (SINK) CURRENT (IOH) (mA) OUTPUT VOLTAGE (VO) INPUT VOLTAGE (VI) +125oC -55oC AMBIENT TEMP (TA) -55oC +125oC
AMBIENT TEMPERATURE (TA) +25oC GATE-TO-SOURCE VOLTAGE (VGS) -10V
-15V
FIGURE MINIMUM OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS
POWER DISSIPATION INVERTER (µW)
FIGURE TYPICAL VOLTAGE TRANSFER CHARACTERISTICS FUNCTION TEMPERATURE
POWER DISSIPATION INVERTER (PD) (µW) AMBIENT TEMPERATURE +25oC 15V; 1MHz 15V; 100KHz 10V; 100KHz 15V; 10KHz 10V; 10KHz 15V; 1KHz SUPPLY VOLTAGE (VCC) FREQUENCY 10KHz INPUT RISE FALL TIME (tr, (ns)
AMBIENT TEMPERATURE (TA) +25oC
SUPPLY VOLTAGE (VDD)
LOAD CAPACITANCE (CL) 50pF (11pF FIXTURE 39pF EXT) 15pF (11pF FIXTURE
INPUT FREQUENCY (kHz)
FIGURE TYPICAL POWER DISSIPATION FREQUENCY CHARACTERISTICS
FIGURE TYPICAL POWER DISSIPATION INPUT RISE FALL TIMES INVERTER
CD4050BMS Chip Dimensions Layout
Dimensions parenthesis millimeters derived from basic inch dimensions indicated. Grid graduations mils (10-3 inch). METALLIZATION: Thickness: PASSIVATION: Silane
BOND PADS: 0.004 inches 0.004 inches THICKNESS: 0.0198 inches 0.0218 inches
Intersil semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
Intersil semiconductor products sold description only. Intersil Corporation reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries.
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