µPA1806 N-CHANNEL FIELD EFFECT TRANSISTOR SWITCHING DESCRIPT

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

µPA1806 N-CHANNEL FIELD EFFECT TRANSISTOR SWITCHING DESCRIPT

Datasheet Thumbnail

Top Searches for this datasheet

FIELD EFFECT TRANSISTOR
µPA1806
N-CHANNEL FIELD EFFECT TRANSISTOR SWITCHING
DESCRIPTION
µPA1806 switching device, which driven directly power source. This device features on-state resistance excellent switching characteristics, suitable applications such DC/DC converters power management notebook computers
PACKAGE DRAWING (Unit:
Source Gate Drain
MAX. ±0.05 0.25 ±0.05 +0.15 -0.1
FEATURES
drive available on-state resistance RDS(on)1 MAX. (VGS RDS(on)2 11.5 MAX. (VGS RDS(on)3 MAX. (VGS Built-in protection diode against
0.145 ±0.055
3.15 ±0.15 ±0.1
±0.2 ±0.1 ±0.2
ORDERING INFORMATION
PART NUMBER PACKAGE
0.65 MAX.
µPA1806GR-9JG
Power TSSOP8
0.27 +0.03 -0.08
0.10
ABSOLUTE MAXIMUM RATINGS 25°C)
Drain Source Voltage (VGS Gate Source Voltage (VDS Drain Current (DC) 25°C) Drain Current (pulse)
Note1 Note2
EQUIVALENT CIRCUIT
+150
Gate Protection Diode Source Gate Body Diode Drain
VDSS VGSS ID(DC) ID(pulse) Tstg
Total Power Dissipation Channel Temperature Storage Temperature
Notes Duty Cycle Mounted ceramic substrate 5000 Remark diode connected between gate source transistor serves protector against ESD. When this device actually used, additional protection circuit externally required voltage exceeding rated voltage applied this device.
information this document subject change without notice. Before using this document, please confirm that this latest version.
devices/types available every country. Please check with local representative availability additional information.
Document G16248EJ1V0DS00 (1st edition) Date Published August 2002 CP(K) Printed Japan
2002
µPA1806
ELECTRICAL CHARACTERISTICS 25°C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain Source On-state Resistance SYMBOL IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) td(off) VF(S-D) di/dt A/µs TEST CONDITIONS 1460 0.82 11.5 MIN. TYP. MAX. UNIT
TEST CIRCUIT SWITCHING TIME
TEST CIRCUIT GATE CHARGE
D.U.T.
D.U.T. Duty Cycle
Wave Form
Wave Form
td(on)
td(off)
toff
Data Sheet G16248EJ1V0DS
µPA1806
TYPICAL CHARACTERISTICS 25°C)
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA Percentage Rated Power
TOTAL POWER DISSIPATION AMBIENT TEMPERATURE
Total Power Dissipation
Mounted ceramic substrate 5000 Mounted FR-4 board 2500
Ambient Temperature
Ambient Temperature
FORWARD BIAS SAFE OPERATING AREA
ID(pulse) ID(DC)
Drain Current
DS(on) Limited Single pulse Mounted ceramic substrate 5000
0.01
Drain Source Voltage
TRANSIENT THERMAL RESISTANCE PULSE WIDTH rth(ch-A) Transient Thermal Resistance °C/W
1000 Single pulse Mounted FR-4 board 2500 125°C/W
Mounted ceramic substrate 5000 62.5°C/W
1000 Pulse Width
Data Sheet G16248EJ1V0DS
µPA1806
DRAIN CURRENT DRAIN SOURCE VOLTAGE
Pulsed
FORWARD TRANSFER CHARACTERISTICS
Pulsed
Drain Current
Drain Current
0.01 0.001 0.0001 125°C 75°C 25°C -25°C
Drain Source Voltage
Gate Source Voltage
GATE CUT-OFF VOLTAGE CHANNEL TEMPERATURE Forward Transfer Admittance
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT
Pulsed
VGS(off) Gate Cut-off Voltage
-25°C 25°C 75°C 125°C
0.01
Channel Temperature
Drain Current
RDS(on) Drain Source On-state Resistance
Pulsed
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE
DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE
Pulsed
Channel Temperature
Gate Source Voltage
Data Sheet G16248EJ1V0DS
µPA1806
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT
Pulsed
CAPACITANCE DRAIN SOURCE VOLTAGE
10000
Ciss, Coss, Crss Capacitance
1000
0.01
Drain Current
Drain Source Voltage
SWITCHING CHARACTERISTICS
10000
SOURCE DRAIN DIODE FORWARD VOLTAGE
Pulsed
td(on), td(off), Switching Time
Diode Forward Current
1000
td(off) td(on) 0.01
0.01
Drain Current
VF(S-D) Source Drain Voltage
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Gate Source Voltage
Gate Charge
Data Sheet G16248EJ1V0DS
µPA1806
information this document current August, 2002. information subject change without notice. actual design-in, refer latest publications NEC's data sheets data books, etc., most up-to-date specifications semiconductor products. products and/or types available every country. Please check with sales representative availability additional information. part this document copied reproduced form means without prior written consent NEC. assumes responsibility errors that appear this document. does assume liability infringement patents, copyrights other intellectual property rights third parties arising from semiconductor products listed this document other liability arising from such products. license, express, implied otherwise, granted under patents, copyrights other intellectual property rights others. Descriptions circuits, software other related information this document provided illustrative purposes semiconductor product operation application examples. incorporation these circuits, software information design customer's equipment shall done under full responsibility customer. assumes responsibility losses incurred customers third parties arising from these circuits, software information. While endeavours enhance quality, reliability safety semiconductor products, customers agree acknowledge that possibility defects thereof cannot eliminated entirely. minimize risks damage property injury (including death) persons arising from defects semiconductor products, customers must incorporate sufficient safety measures their design, such redundancy, fire-containment, anti-failure features. semiconductor products classified into following three quality grades: "Standard", "Special" "Specific". "Specific" quality grade applies only semiconductor products developed based customer-designated "quality assurance program" specific application. recommended applications semiconductor product depend quality grade, indicated below. Customers must check quality grade each semiconductor product before using particular application. "Standard": Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade semiconductor products "Standard" unless otherwise expressly specified NEC's data sheets data books, etc. customers wish semiconductor products applications intended NEC, they must contact sales representative advance determine NEC's willingness support given application. (Note) "NEC" used this statement means Corporation also includes majority-owned subsidiaries. "NEC semiconductor products" means semiconductor product developed manufactured defined above).

µPA1806 N-CHANNEL FIELD EFFECT TRANSISTOR SWITCHING DESCRIPT

Top Searches for this datasheet

Other recent searches