µPA607T P-CHANNEL (6-PIN CIRCUITS) SWITCHING µPA607T mini-mo

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µPA607T P-CHANNEL (6-PIN CIRCUITS) SWITCHING µPA607T mini-mo

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FIELD EFFECT TRANSISTOR
µPA607T
P-CHANNEL (6-PIN CIRCUITS) SWITCHING
µPA607T mini-mold device provided with elements. achieves high-density mounting saves mounting costs.
PACKAGE DIMENSIONS millimeters)
0.65 -0.15
0.32 -0.05
+0.1
FEATURES
elements package same size SC-59 Complement µPA606T Automatic mounting supported
±0.2
+0.1
0.16 -0.06
+0.1
0.95
0.95 ±0.2
CONNECTION
Source Gate Drain Source Gate Drain
ABSOLUTE MAXIMUM RATINGS
PARAMETER Drain Source Voltage Gate Source Voltage Drain Current (DC) Drain Current (pulse) Total Power Dissipation Channel Temperature Storage Temperature SYMBOL VDSS VGSS ID(DC) ID(pulse)* Tstg RATINGS -100 -200 (Total) +150 UNIT
Duty Cycle
Document G11254EJ1V0DS00 (1st edition) Date Published June 1996 Printed Japan
1996
µPA607T
ELECTRICAL CHARACTERISTICS
PARAMETER Drain Cut-off Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain Source On-State Resistance Drain Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time SYMBOL IDSS IGSS VGS(off) |yfs| RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) td(off) VGS(on) -5.0 -5.0 TEST CONDITIONS -5.0 -1.0 -5.0 -4.0 -5.0 MIN. -1.5 TYP. -1.9 MAX. -1.0 +1.0 -2.5 UNIT
SWITCHING TIME MEASUREMENT CIRCUIT CONDITIONS
Gate voltage waveform
VGS(ON)
Drain current waveform Duty Cycle td(on) td(off)
µPA607T
TYPICAL CHARACTERISTICS
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA
Derating Factor Total Power Dissipation
TOTAL POWER DISSIPATION AMBIENT TEMPERATURE
Case Temperature
Ambient Temperature
DRAIN CURRENT DRAIN SOURCE VOLTAGE -120 -100
Drain Current
TRANSFER CHARACTERISTICS -100
Drain Current
Pulsed measurement
-0.1 -0.01 -5.0 Pulsed measurement Gate Source Voltage
-0.001 Drain Source Voltage
GATE SOURCE CUT-OFF VOLTAGE CHANNEL TEMPERATURE
-2.4 |yfs| Forward Transfer Admittance VGS(off) Gate Cut-off Voltage -5.0
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT -5.0 Pulsed measurement
-2.2 -2.0 -1.8 -1.6 -1.4 -1.2
Channel Temperature
Drain Current
-100
µPA607T
DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE Pulsed measurement DRAIN SOURCE ON-STATE RESISTANCE vs.DRAIN CURRENT Pulsed measurement
RDS(on) Drain Source On-State Resistance
RDS(on) Drain Source On-State Resistance
Gate Source Voltage
Drain Current
-100
RDS(on) Drain Source On-State Resistance
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE Ciss, Coss, Crss Capacitance
CAPACITANCE DRAIN SOURCE VOLTAGE
Ciss Coss Crss
Channel Temperature
-100 Drain Source Voltage
SWITCHING CHARACTERISTICS td(on), td(off), Switching Time -5.0 -100 Source Drain Current
SOURCE DRAIN DIODE FORWARD VOLTAGE Pulsed measurement
td(on)
td(off)
-100 -200 Drain Current
-500
-0.1 -0.5
-0.7 -0.8 -0.9 -0.6 Source Drain Voltage
-1.0
µPA607T
REFERENCE
Document Name semiconductor device reliability/quality control system Quality grade semiconductor devices Semiconductor device mounting technology manual Guide quality assurance semiconductor devices Semiconductor selection guide Document TEI-1202 IEI-1209 C10535E MEI-1202 X10679E
µPA607T
part this document copied reproduced form means without prior written consent Corporation. Corporation assumes responsibility errors which appear this document. Corporation does assume liability infringement patents, copyrights other intellectual property rights third parties arising from device described herein other liability arising from such device. license, either express, implied otherwise, granted under patents, copyrights other intellectual property rights Corporation others. While Corporation been making continuous effort enhance reliability semiconductor devices, possibility defects cannot eliminated entirely. minimize risks damage injury persons property arising from defect semiconductor device, customer must incorporate sufficient safety measures design, such redundancy, fire-containment, anti-failure features. devices classified into following three quality grades: "Standard", "Special", "Specific". Specific quality grade applies only devices developed based customer designated "quality assurance program" specific application. recommended applications device depend quality grade, indicated below. Customers must check quality grade each device before using particular application. Standard: Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade devices "Standard" unless otherwise specified NEC's Data Sheets Data Books. customers intend devices applications other than those specified Standard quality grade, they should contact Sales Representative advance. Anti-radioactive design implemented this product.
94.11

µPA607T P-CHANNEL (6-PIN CIRCUITS) SWITCHING µPA607T mini-mo

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