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2SK3322 SWITCHING N-CHANNEL POWER DESCRIPTION 2SK3322 N


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FIELD EFFECT TRANSISTOR
2SK3322
SWITCHING N-CHANNEL POWER
DESCRIPTION
2SK3322 N-Channel DMOS device that features gate charge excellent switching characteristics, designed high voltage applications such switching power supply, adapter.
ORDERING INFORMATION
PART NUMBER 2SK3322 2SK3322-S 2SK3322-ZJ 2SK3322-ZK PACKAGE TO-220AB (MP-25) TO-262 TO-263(MP-25ZJ) TO-263(MP-25ZK)
FEATURES
gate charge TYP. (VDD Gate voltage rating on-state resistance RDS(on) MAX. (VGS Avalanche capability ratings Surface mount package available
ABSOLUTE MAXIMUM RATINGS 25°C)
Drain Source Voltage (VGS Gate Source Voltage (VDS Drain Current (DC) 25°C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) Tstg
±5.5 +150 10.7
Total Power Dissipation 25°C) Total Power Dissipation 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
Notes Duty Cycle Starting 25°C,
information contained this document being issued advance production cycle product. parameters product change before final production Electronics Corporation, discretion, withdraw product prior production. products and/or types availabe every country. Please check with Electronics sales representative availability additional information.
Document D14114EJ2V0DS00 (2nd edition) Date Published August 2003 CP(K) Printed Japan
mark shows major revised points.
1999, 2000
2SK3322
ELECTRICAL CHARACTERISTICS 25°C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) td(off)
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Note
di/dt A/µs
VF(S-D)
Note Pulsed
TEST CIRCUIT AVALANCHE CAPABILITY
D.U.T. BVDSS Duty Cycle
Wave Form
TEST CIRCUIT SWITCHING TIME
D.U.T.
Wave Form
td(on)
td(off) toff
Starting
TEST CIRCUIT GATE CHARGE
D.U.T.
Data Sheet D14114EJ2V0DS
2SK3322
TYPICAL CHARACTERISTICS 25°C)
DRAIN CURRENT DRAIN SOURCE VOLTAGE Pulsed
Drain Current
FORWARD TRANSFER CHARACTERISTICS Pulsed
Drain Current
125°C 75°C 25°C -25°C
Drain Source Voltage
0.01 Gate Source Voltage
GATE SOURCE CUT-OFF VOLTAGE CHANNEL TEMPERATURE
VGS(off) Gate Source Cut-off Voltage
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT
Forward Transfer Admittance
-25°C 25°C 75°C 125°C
Pulsed Drain Current
Channel Temperature
(on) Drain Source On-State Resistance
Pulsed
RDS(on) Drain Source On-State Resistance
DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT
Pulsed Drain Current
Gate Source Voltage
Data Sheet D14114EJ2V0DS
2SK3322
(on) Drain Source On-State Resistance
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE
SOURCE DRAIN DIODE FORWARD VOLTAGE
Diode Forward Current
Pulsed
0.01
Pulsed Source Drain Voltage
Channel Temperature
CAPACITANCE DRAIN SOURCE VOLTAGE 10000
Ciss, Coss, Crss Capacitance
td(on), td(off), Switching Time
SWITCHING CHARACTERISTICS td(off) td(on)
1000
Ciss
Coss
Crss
Drain Current
Drain Source Voltage
REVERSE RECOVERY TIME DRAIN CURRENT 10000
Reverse Recovery Time
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Drain Source Voltage
1000
0.01
Drain Current
Gate Charge
Data Sheet D14114EJ2V0DS
Gate Source Voltage
di/dt A/µS
2SK3322
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA
TOTAL POWER DISSIPATION CASE TEMPERATURE
Percentage Rated Power
Total Power Dissipation
Channel Temperature
Case Temperature
FORWARD BIAS SAFE OPERATING AREA 25°C Single Pulse
ID(pulse)
Drain Current
ID(DC)
1000
Drain Source Voltage
TRANSIENT THERMAL RESISTANCE PULSE WIDTH 1000
rth(t) Transient Thermal Resistance °C/W
Rth(ch-A) 83.3°C/W
Rth(ch-C) 1.93°C/W
Single Pulse 0.01 1000
Pulse Width
Data Sheet D14114EJ2V0DS
2SK3322
SINGLE AVALANCHE CURRENT INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY DERATING FACTOR
Single Avalanche Current
Energy Derating Factor
Starting 25°C
Inductive Load
Starting Starting Channel Temperature
Data Sheet D14114EJ2V0DS
2SK3322
PACKAGE DRAWINGS (Unit: TO-220AB (MP-25)
3.0±0.3
TO-262
1.0±0.5
10.6 MAX. 10.0 TYP.
MAX.
3.6±0.2
MIN.
MAX. 1.3±0.2
1.3±0.2
TYP.
15.5 MAX.
MAX.
1.3±0.2
1.3±0.2
12.7 MIN.
12.7 MIN.
8.5±0.2
0.75±0.1 2.54 TYP.
0.5±0.2 2.54 TYP.
1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.8±0.2
0.75±0.3 2.54 TYP.
0.5±0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.8±0.2
TO-263 (MP-25ZJ)
TYP.
1.0±0.5
TO-263 (MP-25ZK)
MAX. 1.3±0.2
plating 10.0±0.3 7.88 MIN.
1.35±0.3
4.45±0.2 1.3±0.2
TYP.
8.5±0.2
9.15±0.3
15.25±0.5
0.025 0.25
1.4±0.2 0.7±0.2 2.54 TYP.
5.7±0.4
2.54 TYP.
0.5±0.2
2.54
0.5±
0.75±0.2
0.25
2.8±0.2
1.Gate 2.Drain 3.Source 4.Fin (Drain)
1.Gate 2.Drain 3.Source
4.Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Remark diode connected between gate source transistor serves protector against ESD. When this device actually used, additional protection circuit externally required voltage exceeding rated voltage applied this device.
Gate Protection Diode
Source
2.54±0.25
Data Sheet D14114EJ2V0DS
2SK3322
information this document current August, 2003. information subject change without notice. actual design-in, refer latest publications Electronics data sheets data books, etc., most up-to-date specifications Electronics products. products and/or types available every country. Please check with Electronics sales representative availability additional information. part this document copied reproduced form means without prior written consent Electronics. Electronics assumes responsibility errors that appear this document. Electronics does assume liability infringement patents, copyrights other intellectual property rights third parties arising from Electronics products listed this document other liability arising from such products. license, express, implied otherwise, granted under patents, copyrights other intellectual property rights Electronics others. Descriptions circuits, software other related information this document provided illustrative purposes semiconductor product operation application examples. incorporation these circuits, software information design customer's equipment shall done under full responsibility customer. Electronics assumes responsibility losses incurred customers third parties arising from these circuits, software information. While Electronics endeavors enhance quality, reliability safety Electronics products, customers agree acknowledge that possibility defects thereof cannot eliminated entirely. minimize risks damage property injury (including death) persons arising from defects Electronics products, customers must incorporate sufficient safety measures their design, such redundancy, fire-containment anti-failure features. Electronics products classified into following three quality grades: "Standard", "Special" "Specific". "Specific" quality grade applies only Electronics products developed based customerdesignated "quality assurance program" specific application. recommended applications Electronics product depend quality grade, indicated below. Customers must check quality grade each Electronics product before using particular application. "Standard": Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade Electronics products "Standard" unless otherwise expressly specified Electronics data sheets data books, etc. customers wish Electronics products applications intended Electronics, they must contact Electronics sales representative advance determine Electronics' willingness support given application. (Note) "NEC Electronics" used this statement means Electronics Corporation also includes majority-owned subsidiaries. "NEC Electronics products" means product developed manufactured Electronics defined above).
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