2SK3297 DESCRIPTION 2SK3297 N-channel DMOS device that featu

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2SK3297 DESCRIPTION 2SK3297 N-channel DMOS device that featu

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FIELD EFFECT TRANSISTOR
2SK3297
DESCRIPTION
2SK3297 N-channel DMOS device that features gate charge excellent switching characteristics, designed high voltage applications such switching power supply, adapter.
ORDERING INFORMATION
PART NUMBER 2SK3297 PACKAGE Isolated TO-220
FEATURES
gate charge TYP. (VDD voltage rating on-state resistance RDS(ON) MAX. (VGS capability ratings TO-220 package
(Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS 25°C)
Drain Source Voltage (VGS Gate Source Voltage (VDS Drain Current(DC) 25°C) Drain Current(pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) Tstg
±5.0 +150 16.7
Total Power Dissipation 25°C) Total Power Dissipation 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
Notes1. Duty Cycle Starting 25°C,
information this document subject change without notice. Before using this document, please confirm that this latest version.
devices/types available every country. Please check with local representative availability additional information.
Document D14058EJ1V0DS00 (1st edition) Date Published November 2000 Printed Japan
1999, 2000
2SK3297
ELECTRICAL CHARACTERISTICS 25°C)
Characteristics Zero Gate Voltage Drain Current Gate Leakage Current Gate Source Cut-off Voltage Forward Transfer Admittance Drain Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) td(off) VF(S-D) di/dt A/µs Symbol Test Conditions VGS(on) MIN. TYP. MAX. ±100 Unit
TEST CIRCUIT AVALANCHE CAPABILITY
D.U.T. BVDSS
TEST CIRCUIT SWITCHING TIME
D.U.T.
Wave Form
VGS(on)
Wave Form
Duty Cycle
td(on)
td(off)
toff
Starting
TEST CIRCUIT GATE CHARGE
D.U.T.
Data Sheet D14058EJ1V0DS
2SK3297
TYPICAL CHARACTERISTICS
DRAIN CURRENT DRAIN SOURCE VOLTAGE
Drain Current
FORWARD TRANSFER CHARACTERISTICS Pulsed
Drain Current
Pulsed Drain Source Voltage
-25°C 25°C 75°C 125°C
0.01
Gate Source Voltage
GATE SOURCE CUT-OFF VOLTAGE CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT
VGS(off) Gate Source Cut-off Voltage
Forward Transfer Admittance
-25°C 25°C 75°C 125°C Pulsed
Drain Current
Channel Temperature
RDS(on) Drain Source On-state Resistance
Pulsed
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT Pulsed
Gate Source Voltage
Drain Current
Data Sheet D14058EJ1V0DS
2SK3297
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE Pulsed
SOURCE DRAIN DIODE FORWARD VOLTAGE Pulsed
Diode Forward Current
0.01
Channel Temperature
Source Drain Voltage
CAPACITANCE DRAIN SOURCE VOLTAGE 10000
SWITCHING CHARACTERISTICS
td(on), td(off), Switching Time
Ciss, Coss, Crss Capacitance
Ciss
td(off)
1000
td(on)
Coss
Crss 1000
Drain Current
Drain Source Voltage
REVERSE RECOVERY TIME DIODE FORWARD CURRENT 10000
Reverse Recovery Time Drain Source Voltage
DYNAMIC INPUT/OUTPUT CHARACTERISTICS Gate Charge
Gate Source Voltage
1000
di/dt A/µs
Diode Forward Current
Data Sheet D14058EJ1V0DS
2SK3297
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA
TOTAL POWER DISSIPATION CASE TEMPERATURE
Percentage Rated Power
Total Power Dissipation
Channel Temperature
Case Temperature
FORWARD BIAS SAFE OPERATING AREA
Drain Current
ID(pulse)
ID(DC)
25°C Single Pulse
1000
Drain Source Voltage
TRANSIENT THERMAL RESISTANCE PULSE WIDTH Rth(ch-A) 62.5°C/W
rth(t) Transient Thermal Resistance °C/W
Rth(ch-C) 3.57°C/W
Single Pulse 0.01 1000
Pulse Width
Data Sheet D14058EJ1V0DS
2SK3297
SINGLE AVALANCHE CURRENT INDUCTIVE LOAD
Single Avalanche Current
SINGLE AVALANCHE ENERGY DERATING FACTOR
Energy Derating Factor
Starting 25°C
0.01
Inductive Load
Starting Starting Channel Temperature
Data Sheet D14058EJ1V0DS
2SK3297
PACKAGE DRAWING(Unit:
Isolated TO-220 (MP-45F)
10.0±0.3 4.5±0.2 2.7±0.2
3.2±0.2
EQUIVALENT CIRCUIT
15.0±0.3 3±0.1
Drain
12.0±0.2
Gate
Body Diode
4±0.2
13.5 MIN.
Source
0.7±0.1 2.54 TYP.
1.3±0.2 1.5±0.2 2.54 TYP.
2.5±0.1 0.65±0.1 1.Gate 2.Drain 3.Source
Remark Strong electric field, when exposed this device, cause destruction gate oxide ultimately degrade device operation. Steps must taken stop generation static electricity much possible, quickly dissipate once, when occurred.
Data Sheet D14058EJ1V0DS
2SK3297
information this document current November, 2000. information subject change without notice. actual design-in, refer latest publications NEC's data sheets data books, etc., most up-to-date specifications semiconductor products. products and/or types available every country. Please check with sales representative availability additional information. part this document copied reproduced form means without prior written consent NEC. assumes responsibility errors that appear this document. does assume liability infringement patents, copyrights other intellectual property rights third parties arising from semiconductor products listed this document other liability arising from such products. license, express, implied otherwise, granted under patents, copyrights other intellectual property rights others. Descriptions circuits, software other related information this document provided illustrative purposes semiconductor product operation application examples. incorporation these circuits, software information design customer's equipment shall done under full responsibility customer. assumes responsibility losses incurred customers third parties arising from these circuits, software information. While endeavours enhance quality, reliability safety semiconductor products, customers agree acknowledge that possibility defects thereof cannot eliminated entirely. minimize risks damage property injury (including death) persons arising from defects semiconductor products, customers must incorporate sufficient safety measures their design, such redundancy, fire-containment, anti-failure features. semiconductor products classified into following three quality grades: "Standard", "Special" "Specific". "Specific" quality grade applies only semiconductor products developed based customer-designated "quality assurance program" specific application. recommended applications semiconductor product depend quality grade, indicated below. Customers must check quality grade each semiconductor product before using particular application. "Standard": Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade semiconductor products "Standard" unless otherwise expressly specified NEC's data sheets data books, etc. customers wish semiconductor products applications intended NEC, they must contact sales representative advance determine NEC's willingness support given application. (Note) "NEC" used this statement means Corporation also includes majority-owned subsidiaries. "NEC semiconductor products" means semiconductor product developed manufactured defined above).

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