µPA1758 DESCRIPTION This product Dual N-Channel Field Effect

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µPA1758 DESCRIPTION This product Dual N-Channel Field Effect

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FIELD EFFECT TRANSISTOR
µPA1758
DESCRIPTION
This product Dual N-Channel Field Effect Transistor designed power management application notebook computers, Li-ion battery application.
FEATURES
Dual chips small package gate drive type on-state resistance RDS(on)1 (MAX.) (VGS RDS(on)2 (MAX.) (VGS Ciss Ciss 1100 (TYP.) Built-in protection diode Small surface mount package (Power SOP8)
PACKAGE DRAWING (Unit
Source Gate Drain Source Gate Drain 5.37 Max.
+0.10 -0.05
±0.3
0.15
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
Max.
1.44
0.05 Min.
±0.2 0.10
1.27 0.40
0.78 Max. 0.12
µPA1758G
+0.10 -0.05
ABSOLUTE MAXIMUM RATINGS
Drain Source Voltage (VGS Gate Source Voltage (VDS Drain Current (DC) Drain Current (Pulse)
Note1 Note2 Note2
EQUIVALENT CIRCUIT
±12.0 ±6.0
Gate Protection Diode Gate Body Diode Drain
VDSS VGSS ID(DC) ID(pulse) Tstg
Total Power Dissipation unit) Total Power Dissipation unit) Channel Temperature Storage Temperature
Source
Notes Duty cycle
Mounted ceramic substrate 2000
Remark diode connected between gate source transistor serves protector against ESD. When this device actually used, additional protection circuit externally required voltage exceeding rated voltage applied this device.
information this document subject change without notice. Before using this document, please confirm that this latest version.
devices/types available every country. Please check with local representative availability additional information.
Document D12911EJ2V0DS00 (2nd edition) Date Published 2001 CP(K) Printed Japan
mark shows major revised points.
1998
µPA1758
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS Drain Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode forward Voltage VGS(off) IDSS IGSS Ciss Coss Crss td(on) td(off) VF(S-D) VGS(on) TEST CONDITIONS ±12.0 1100 15.0 MIN. TYP. MAX. UNIT
TEST CIRCUIT SWITCHING TIME
D.U.T.
Wave Form
TEST CIRCUIT GATE CHARGE
D.U.T.
(on)
Duty Cycle
Wave Form
(on) (off) toff
Data Sheet D12911EJ2V0DS
µPA1758
TYPICAL CHARACTERISTICS
TRANSIENT THERMAL RESISTANCE PULSE WIDTH
rth(t) Transient Thermal Resistance °C/W
0.01 0.001
Mounted ceramic substrate 2000mm2 1.1mm Single Pulse, unit
Pulse Width
RDS(on) Drain Source On-state Resistance
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE Pulsed
|yfs| Forward Transfer Admittance
TA=-50°C TA=-25°C TA=25°C
VDS=10V Pulsed
ID=3
TA=75°C TA=125°C TA=150°C
Drain Current
Gate Source Voltage
RDS(on) Drain Source On-state Resistance
VGS(off) Gate Source Cut-off Voltage
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT Pulsed VGS=4.5V VGS=2.5V
GATE SOURCE CUTOFF VOLTAGE CHANNEL TEMPERATURE VDS=10 ID=1
Drain Current
Channel Temperature
Data Sheet D12911EJ2V0DS
µPA1758
RDS(on) Drain Source On-state Resistance
SOURCE DRAIN DIODE FORWARD VOLTAGE Pulsed
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE
Diode Forward Current
VGS=2.5V VGS=2.5V
VGS=4.5V
VGS=0V
Channel Temperature
Source Drain Voltage
CAPACITANCE DRAIN SOURCE VOLTAGE 10000
SWITCHING CHARACTERISTICS
td(on), td(off), Switching Time
Ciss, Coss, Crss Capacitance
td(off) td(on)
Ciss 1000 Coss
Crss
VDS=15V VGS=4V Drain Current
Drain Source Voltage
REVERSE RECOVERY DIODE DRAIN CURRENT
Reverse Recovery Diode
Drain Source Voltage
VDD=24 VDD=15 VDD=6
Drain Current
Gate Charge
Data Sheet D12911EJ2V0DS
Gate Source Voltage
di/dt =100A/µ
DYNAMIC INPUT/OUTPUT CHARACTERISTICS ID=6.0
µPA1758
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION AMBIENT TEMPERATURE
Total Power Dissipation W/package
unit unit Mounted ceramic substrate
Percentage Rated Power
Ambient Temperature
Ambient Temperature
FORWARD BIAS SAFE OPERATING AREA
ID(pulse) ID(DC)
Mounted ceramic substrate unit
DRAIN CURRENT DRAIN SOURCE VOLTAGE Pulsed
Drain Current
Drain Current
VGS=4.5
VGS=2.5
25°C Single Pulse
0.01
Drain Source Voltage
Drain Source Voltage
FORWARD TRANSFER CHARACTERISTICS Pulsed
Drain Current
TA=150°C TA=125°C TA=75°C TA=25°C TA=-25°C TA=-50°C
Gate Source Voltage
Data Sheet D12911EJ2V0DS
µPA1758
[MEMO]
Data Sheet D12911EJ2V0DS
µPA1758
[MEMO]
Data Sheet D12911EJ2V0DS
µPA1758
information this document current May, 2001. information subject change without notice. actual design-in, refer latest publications NEC's data sheets data books, etc., most up-to-date specifications semiconductor products. products and/or types available every country. Please check with sales representative availability additional information. part this document copied reproduced form means without prior written consent NEC. assumes responsibility errors that appear this document. does assume liability infringement patents, copyrights other intellectual property rights third parties arising from semiconductor products listed this document other liability arising from such products. license, express, implied otherwise, granted under patents, copyrights other intellectual property rights others. Descriptions circuits, software other related information this document provided illustrative purposes semiconductor product operation application examples. incorporation these circuits, software information design customer's equipment shall done under full responsibility customer. assumes responsibility losses incurred customers third parties arising from these circuits, software information. While endeavours enhance quality, reliability safety semiconductor products, customers agree acknowledge that possibility defects thereof cannot eliminated entirely. minimize risks damage property injury (including death) persons arising from defects semiconductor products, customers must incorporate sufficient safety measures their design, such redundancy, fire-containment, anti-failure features. semiconductor products classified into following three quality grades: "Standard", "Special" "Specific". "Specific" quality grade applies only semiconductor products developed based customer-designated "quality assurance program" specific application. recommended applications semiconductor product depend quality grade, indicated below. Customers must check quality grade each semiconductor product before using particular application. "Standard": Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade semiconductor products "Standard" unless otherwise expressly specified NEC's data sheets data books, etc. customers wish semiconductor products applications intended NEC, they must contact sales representative advance determine NEC's willingness support given application. (Note) "NEC" used this statement means Corporation also includes majority-owned subsidiaries. "NEC semiconductor products" means semiconductor product developed manufactured defined above).

µPA1758 DESCRIPTION This product Dual N-Channel Field Effect

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