µPA1706 DESCRIPTION This product N-Channel Field Effect Tran

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FIELD EFFECT TRANSISTOR
µPA1706
DESCRIPTION
This product N-Channel Field Effect Transistor designed DC/DC Converters power management applications notebook computers.
PACKAGE DRAWING (Unit
1,2,3 Source Gate 5,6,7,8 Drain
FEATURES
Super on-resistance
1.44
RDS(on)1 TYP. (VGS RDS(on)2 TYP. (VGS RDS(on)3 TYP. (VGS Ciss Ciss 3000 TYP. Built-in protection diode Small surface mount package (Power SOP8)
MAX.
5.37 MAX.
±0.3
+0.10 -0.05
0.15
0.05 MIN.
±0.2 0.10
1.27 0.78 MAX. 0.40
+0.10 -0.05
0.12
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
µPA1706G
EQUIVALENT CIRCUIT ABSOLUTE MAXIMUM RATINGS terminals connected)
Drain Source Voltage Gate Source Voltage Drain Current (DC) Drain Current (pulse)
Note3 Note4 Note1 Note2
Drain
VDSS VGSS ID(DC) ID(pulse) Tstg
Gate Protection Diode Source Gate Body Diode
Total Power Dissipation Channel Temperature Storage Temperature Notes Remark
Duty cycle Mounted ceramic substrate 1200 diode connected between gate source transistor serves protector against ESD. When this device actually used, additional protection circuit externally required voltage exceeding rated voltage applied this device.
information this document subject change without notice. Before using this document, please confirm that this latest version.
devices/types available every country. Please check with local representative availability additional information.
Document G13083EJ2V0DS00 (2nd edition) Date Published April 2001 CP(K) Printed Japan
mark shows major revised points.
1998
µPA1706
ELECTRICAL CHARACTERISTICS terminals connected)
CHARACTERISTICS Drain Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 RDS(on)3 Gate Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) IDSS IGSS Ciss Coss Crss td(on) td(off) VF(S-D) TEST CONDITIONS VGS(on) di/dt 100A/µs 3000 MIN. TYP. MAX. 10.0 12.0 UNIT
TEST CIRCUIT SWITCHING TIME
TEST CIRCUIT GATE CHARGE
D.U.T.
D.U.T.
td(on) td(off) toff
VGS(on)
Wave Form
Duty Cycle
Wave Form
Data Sheet G13083EJ2V0DS
µPA1706
TYPICAL CHARACTERISTICS 25°C)
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA
TOTAL POWER DISSIPATION AMBIENT TEMPERATURE
Total Power Dissipation
Percentage Rated Power
Mounted ceramic substrate 1200mm 0.7mm
Ambient Temperature
Ambient Temperature
FORWARD BIAS SAFE OPERATING AREA
Lim10
ID(pulse)
ID(DC)
Remark Mounted ceramic substrate 1200
Drain Current
25°C Single Pulse
0.01
Drain Source Voltage
TRANSIENT THERMAL RESISTANCE PULSE WIDTH
rth(t) Transient Thermal Resistance °C/W
Rth(ch-a) 62.5°C/W
0.01 0.001
Mounted ceramic substrate 1200mm2 0.7mm Single Pulse Channel Ambien
Pulse Width
Data Sheet G13083EJ2V0DS
µPA1706
FORWARD TRANSFER CHARACTERISTICS Pulsed
Drain Current
DRAIN CURRENT DRAIN SOURCE VOLTAGE Pulsed
Drain Current
125°C 75°C 25°C -25°C
0.01
Gate Source Voltage
Drain Source Voltage
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT
|yfs| Forward Transfer Admittance
1000
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE
Pulsed
Pulsed
-25°C 25°C 75°C 125°C
Drain Current
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT Pulsed
Gate Source Voltage
GATE SOURCE CUT-OFF VOLTAGE CHANNEL TEMPERATURE
RDS(on) Drain Source On-state Resistance
Drain Current
VGS(off) Gate Source Cut-off Voltage
Channel Temperature
Data Sheet G13083EJ2V0DS
µPA1706
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE
SOURCE DRAIN DIODE FORWARD VOLTAGE 1000
Diode Forward Current
Pulsed
Channel Temperature
Source Drain Voltage
CAPACITANCE DRAIN SOURCE VOLTAGE 10000
Ciss, Coss, Crss Capacitance td(on), td(off), Switching Time
SWITCHING CHARACTERISTICS td(off) td(on)
Ciss
1000 Coss Crss
Drain Current
Drain Source Voltage
REVERSE RECOVERY TIME DRAIN CURRENT
Reverse Recovery Diode
Drain Source Voltage
Drain Current
Gate Charge
Gate Source Voltage
di/dt 100A/µs
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Data Sheet G13083EJ2V0DS
µPA1706
[MEMO]
Data Sheet G13083EJ2V0DS
µPA1706
[MEMO]
Data Sheet G13083EJ2V0DS
µPA1706
information this document current April, 2001. information subject change without notice. actual design-in, refer latest publications NEC's data sheets data books, etc., most up-to-date specifications semiconductor products. products and/or types available every country. Please check with sales representative availability additional information. part this document copied reproduced form means without prior written consent NEC. assumes responsibility errors that appear this document. does assume liability infringement patents, copyrights other intellectual property rights third parties arising from semiconductor products listed this document other liability arising from such products. license, express, implied otherwise, granted under patents, copyrights other intellectual property rights others. Descriptions circuits, software other related information this document provided illustrative purposes semiconductor product operation application examples. incorporation these circuits, software information design customer's equipment shall done under full responsibility customer. assumes responsibility losses incurred customers third parties arising from these circuits, software information. While endeavours enhance quality, reliability safety semiconductor products, customers agree acknowledge that possibility defects thereof cannot eliminated entirely. minimize risks damage property injury (including death) persons arising from defects semiconductor products, customers must incorporate sufficient safety measures their design, such redundancy, fire-containment, anti-failure features. semiconductor products classified into following three quality grades: "Standard", "Special" "Specific". "Specific" quality grade applies only semiconductor products developed based customer-designated "quality assurance program" specific application. recommended applications semiconductor product depend quality grade, indicated below. Customers must check quality grade each semiconductor product before using particular application. "Standard": Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade semiconductor products "Standard" unless otherwise expressly specified NEC's data sheets data books, etc. customers wish semiconductor products applications intended NEC, they must contact sales representative advance determine NEC's willingness support given application. (Note) "NEC" used this statement means Corporation also includes majority-owned subsidiaries. "NEC semiconductor products" means semiconductor product developed manufactured defined above).

µPA1706 DESCRIPTION This product N-Channel Field Effect Tran

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