µPA1760 DESCRIPTION µPA1760 N-Channel Field Effect Transisto

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µPA1760 DESCRIPTION µPA1760 N-Channel Field Effect Transisto

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FIELD EFFECT TRANSISTOR
µPA1760
DESCRIPTION
µPA1760 N-Channel Field Effect Transistor designed DC/DC Converters power management application notebook computers.
PACKAGE DRAWING (Unit
Source Gate Drain Source Gate Drain 5.37 Max.
+0.10 -0.05
FEATURES
Dual Chip Type
1.44
±0.3
On-Resistance RDS(on)1 26.0 MAX. (VGS RDS(on)2 36.0 MAX. (VGS RDS(on)3 42.0 MAX. (VGS Ciss Ciss TYP. Built-in Protection Diode Small Surface Mount Package (Power SOP8)
Max.
0.15
0.05 Min.
±0.2 0.10
1.27 0.40
0.78 Max. 0.12
+0.10 -0.05
ABSOLUTE MAXIMUM RATINGS 25°C, terminals connected.)
Drain Source Voltage (VGS Gate Source Voltage (VDS Drain Current (DC) Drain Current (Pulse)
Note1 Note2 Note2
VDSS VGSS ID(DC) ID(pulse) Tstg
±8.0
Gate Body Diode Drain
EQUIVALENT CIRCUIT (1/2 Circuit)
Total Power Dissipation unit) Total Power Dissipation unit) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note3 Note3
Gate Protection Diode
Source
Notes Duty cycle 25°C, Mounted ceramic substrate 2000 Starting 25°C, Remark diode connected between gate source transistor serves protector against ESD. When this device actually used, additional protection circuit externally required voltage Exceeding rated voltage applied this device.
information this document subject change without notice. Before using this document, please confirm that this latest version.
devices/types available every country. Please check with local representative availability additional information.
Document G13891EJ2V0DS00 (2nd edition) Date Published April 2001 CP(K) Printed Japan
mark shows major revised points.
1998,1999
µPA1760
ELECTRICAL CHARACTERISTICS 25°C, terminals connected.)
CHARACTERISTICS Drain Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 RDS(on)3 Gate Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) IDSS IGSS Ciss Coss Crss td(on) td(off) VF(S-D) TEST CONDITIONS VGS(on) di/dt 100A/µs 0.86 MIN. TYP. 20.5 27.0 31.0 MAX. 26.0 36.0 42.0 UNIT
TEST CIRCUIT AVALANCHE CAPABILITY
D.U.T.
TEST CIRCUIT SWITCHING TIME
D.U.T.
Wave Form
VGS(on)
BVDSS
Duty Cycle
Wave Form
td(on) td(off) toff
Starting
TEST CIRCUIT GATE CHARGE
D.U.T.
Data Sheet G13891EJ2V0DS
µPA1760
TYPICAL CHARACTERISTICS 25°C)
DRAIN CURRENT DRAIN SOURCE VOLTAGE Pulsed VGS=4.5
Drain Current
FORWARD TRANSFER CHARACTERISTICS Pulsed
VGS=10
Drain Current
VGS=4.0
TA=125°C TA=75°C
TA=25°C TA=-25°C Gate Source Voltage
Drain Source Voltage
|yfs| Forward Transfer Admittance
VDS=10V Pulsed -25°C 25°C
RDS(on) Drain Source On-state Resistance
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT
DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE Pulsed ID=4 ID=8
=75°C =125°C
Drain Current
Gate Source Voltage
GATE SOURCE CUT-OFF VOLTAGE CHANNEL TEMPERATURE VDS=10 ID=1
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT VGS=4.5V
VGS(off) Gate Source Cut-off Voltage
VGS=4.0V
VGS=10V
Drain Current
Channel Temperature
Data Sheet G13891EJ2V0DS
µPA1760
SOURCE DRAIN DIODE FORWARD VOLTAGE
Diode Forward Current
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE
Pulsed
VGS=4.5V
VGS=10V VGS=0V
VGS=10V
Channel Temperature
Source Drain Voltage
CAPACITANCE DRAIN SOURCE VOLTAGE 10000
Ciss, Coss, Crss Capacitance
SWITCHING CHARACTERISTICS 1000
td(on), td(off), Switching Time
1000 Ciss
td(off) td(on)
Coss Crss
Drain Source Voltage
REVERSE RECOVERY TIME DRAIN CURRENT 1000
Reverse Recovery Time
Drain Source Voltage
Drain Current
VDD=24 VDD=15 VDD=6
Drain Current
Gate Charge
Data Sheet G13891EJ2V0DS
Gate Source Voltage
di/dt A/µs
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
µPA1760
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA
Total Power Dissipation W/package
TOTAL POWER DISSIPATION AMBIENT TEMPERATURE unit unit Mounted ceramic substrate 2000
Percentage Rated Power
Ambient Temperature
Ambient Temperature
FORWARD BIAS SAFE OPERATING AREA ID(pulse)
Mounted ceramic substrate unit
Drain Current
Lim10
ID(DC)
25°C 0.01 Single Pulse
Drain Source Voltage
TRANSIENT THERMAL RESISTANCE PULSE WIDTH
rth(t) Transient Thermal Resistance °C/W
Rth(ch-A) 73.5°C/W
Mounted ceramic substrate 2000mm2 1.6mm Single Pulse, unit, TA=25°C
0.01
Pulse Width
Data Sheet G13891EJ2V0DS
µPA1760
SINGLE AVALANCHE CURRENT INDUCTIVE LOAD
Single Avalanche Current
SINGLE AVALANCHE ENERGY DERATING FACTOR
Energy Derating Factor
Starting 25°C
Inductive Load
Starting Starting Channel Temperature
Data Sheet G13891EJ2V0DS
µPA1760
[MEMO]
Data Sheet G13891EJ2V0DS
µPA1760
information this document current April, 2001. information subject change without notice. actual design-in, refer latest publications NEC's data sheets data books, etc., most up-to-date specifications semiconductor products. products and/or types available every country. Please check with sales representative availability additional information. part this document copied reproduced form means without prior written consent NEC. assumes responsibility errors that appear this document. does assume liability infringement patents, copyrights other intellectual property rights third parties arising from semiconductor products listed this document other liability arising from such products. license, express, implied otherwise, granted under patents, copyrights other intellectual property rights others. Descriptions circuits, software other related information this document provided illustrative purposes semiconductor product operation application examples. incorporation these circuits, software information design customer's equipment shall done under full responsibility customer. assumes responsibility losses incurred customers third parties arising from these circuits, software information. While endeavours enhance quality, reliability safety semiconductor products, customers agree acknowledge that possibility defects thereof cannot eliminated entirely. minimize risks damage property injury (including death) persons arising from defects semiconductor products, customers must incorporate sufficient safety measures their design, such redundancy, fire-containment, anti-failure features. semiconductor products classified into following three quality grades: "Standard", "Special" "Specific". "Specific" quality grade applies only semiconductor products developed based customer-designated "quality assurance program" specific application. recommended applications semiconductor product depend quality grade, indicated below. Customers must check quality grade each semiconductor product before using particular application. "Standard": Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade semiconductor products "Standard" unless otherwise expressly specified NEC's data sheets data books, etc. customers wish semiconductor products applications intended NEC, they must contact sales representative advance determine NEC's willingness support given application. (Note) "NEC" used this statement means Corporation also includes majority-owned subsidiaries. "NEC semiconductor products" means semiconductor product developed manufactured defined above).

µPA1760 DESCRIPTION µPA1760 N-Channel Field Effect Transisto

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