µPA610TA P-CHANNEL FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING

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µPA610TA P-CHANNEL FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING

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FIELD EFFECT TRANSISTOR
µPA610TA
P-CHANNEL FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING
DESCRIPTION
µPA610TA switching device which driven directly power source. µPA610TA excellent switching characteristics,
±0.2
Package Drawings (unit:
0.65 +0.1 -0.15
0.32 +0.1 -0.05 0.16 +0.1 -0.06
suitable high-speed switching device digital circuits.
FEATURES
driven power source. Gate Cut-off Voltage.
0.95 0.95 ±0.2
ABSOLUTE MAXIMUM RATINGS
Drain Source Voltage Gate Source Voltage Drain Current (DC) Drain Current (pulse) Total Power Dissipation Channel Temperature Storage Temperature VDSS VGSS ID(DC) ID(pulse) Tstg +0.1 +0.4 Note (TOTAL) +150
Gate
Equivalent Circuit
Drain
Internal Diode
Note Duty Cycle
Gate Protect Diode Source
Connection (Top View)
Source Source Gate Drain Gate Drain
Marking
diode connected between gate source transistor serves protector against ESD. When this device actually used, additional protection circuit externally required voltage exceeding rated voltage applied this device.
Document D11199EJ1V0DS00 (1st edition) Date Published September 1996 Printed Japan
1996
µPA610TA
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC Drain Cut-off Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain Source On-State Resistance Drain Source On-State Resistance Drain Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL IDSS IGSS VGS(off) RDS(on)1 -1.0 -1.4 MIN. TYP. MAX. -1.7 UNIT TEST CONDITIONS -2.5
RDS(on)2
RDS(on)3
Ciss Coss Crss td(on) td(off)
VGS(on)
µPA610TA
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA -100 DRAIN CURRENT DRAIN SOURCE VOLTAGE
Derating Factor
Drain Current
-2.5
Ambient Temperature
Drain Source Voltage
TRANSFER CHARACTERISTICS -100
IyfsI Forward Transfer Admittance
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT 1000
Drain Current
-0.1
-0.1
-0.01
-0.001
-0.8
-1.6
-2.4
-3.2
-4.0
-100
-1000
Gate Source Voltage
Drain Current
RDS(on) Drain Source On-State Resistance
RDS(on) Drain Source On-State Resistance
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT -0.1 -2.5
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT -0.1 -100 Drain Current -1000
-100 Drain Current
-1000
µPA610TA
RDS(on) Drain Source On-Stage Resistance
RDS(on) Drain Source On-State Resistance
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT -0.1
DRAIN CURRENT DRAIN SOURCE VOLTAGE Gate Source Voltage -100
-100 Drain Current
-1000
CAPACITANCE DRAIN SOURCE VOLTAGE
Ciss,Coss,Crss Capacitance td(on),tr,td(off),tf Switching Time
SWITCHING CHARACTERISTICS 1000 td(on) td(off)
Coss Ciss
Crss Drain Source Voltage -100
VGS(on) -100 Drain Current -1000
SOURCE DRAIN DIODE FORWARD VOLTAGE -1000
Reverse Drain Current
-100
-0.1 -0.2
-0.4
-0.6
-0.8
-1.0
-1.2
Source Drain Voltage
µPA610TA
REFERENCE
Document Name semiconductor device reliability/quality control system Quality grade semiconductor devices Semiconductor device mounting technology manual Guide quality assurance semiconductor devices Semiconductor selection guide Document TEI-1202 C11531E C10535E MEI-1202 X10679E
µPA610TA
[MEMO]
µPA610TA
[MEMO]
µPA610TA
part this document copied reproduced form means without prior written consent Corporation. Corporation assumes responsibility errors which appear this document. Corporation does assume liability infringement patents, copyrights other intellectual property rights third parties arising from device described herein other liability arising from such device. license, either express, implied otherwise, granted under patents, copyrights other intellectual property rights Corporation others. While Corporation been making continuous effort enhance reliability semiconductor devices, possibility defects cannot eliminated entirely. minimize risks damage injury persons property arising from defect semiconductor device, customers must incorporate sufficient safety measures design, such redundancy, fire-containment, anti-failure features. devices classified into following three quality grades: "Standard", "Special", "Specific". Specific quality grade applies only devices developed based customer designated "quality assurance program" specific application. recommended applications device depend quality grade, indicated below. Customers must check quality grade each device before using particular application. Standard: Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade devices "Standard" unless otherwise specified NEC's Data Sheets Data Books. customers intend devices applications other than those specified Standard quality grade, they should contact sales representative advance. Anti-radioactive design implemented this product.
96.5

µPA610TA P-CHANNEL FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING

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