51.0 4.25 POSN 10.0 POWER MOSFET MODULE HIGH POWER AUDIO APPLICAT

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51.0 4.25 POSN 10.0 POWER MOSFET MODULE HIGH POWER AUDIO APPLICAT

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LC32016 LC32020
51.0 4.25 POSN 10.0
POWER MOSFET MODULE HIGH POWER AUDIO APPLICATIONS
28.0
57.0
FEATURES
CHANNEL POWER MOSFETS CHANNEL POWER MOSFETS HIGH SPEED SWITCHING SEMEFAB DESIGNED DIFFUSED
6.35
14.0
10.0
HIGH VOLTAGE (160V 200V) HIGH ENERGY RATING
90.0
ENHANCEMENT MODE CASE INTEGRAL PROTECTION DIODE
ABSOLUTE MAXIMUM RATINGS
(Tcase 25°C unless otherwise stated) VDSX Drain Source Voltage VGSS ID(PK) Tstg Gate Source Voltage Continuous Drain Current Body Drain Diode Total Power Dissipation Storage Temperature Range Maximum Operating Junction Temperature Thermal Resistance Junction Case Tcase 25°C LC32016 ±160V ±14V ±32A ±32A 500W/CH 150°C 150°C 0.3°C/W LC32020 ±200V
Magnatec.
Telephone +44(0)1455 554711. +44(0)1455 558843. E-mail: magnatec@semelab.co.uk Website: http://www.semelab.co.uk
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LC32016 LC32020
STATIC CHARACTERISTICS (Tcase 25°C unless otherwise stated) (N-Channel)
Characteristic
BVDSX BVGSS VGS(OFF) VDS(SAT)* Drain Source Breakdown Voltage Gate Source Breakdown Voltage Gate Source Cut-Off Voltage Drain Source Saturation Voltage
Test Conditions
-10V 10mA LC32016 LC32020 ±100µA 100mA 160V LC32016 200V LC32020
Min.
Typ.
Max.
Unit
IDSX
Drain Source Cut-Off Current
-10V
yfs*
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS (Tcase 25°C unless otherwise stated)
Characteristic
Ciss Coss Crss toff Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Time Turn-off Time
Test Conditions
1MHz
TYP.
N-Ch
P-Ch
Unit
Pulse Test: Pulse Width 300µs Duty Cycle Reverse polarity P-Channel
Drain
Gate Source Source Gate Source Source
Gate CHANNEL CHANNEL Gate
Drain
Magnatec.
Telephone +44(0)1455 554711. +44(0)1455 558843. E-mail: magnatec@semelab.co.uk Website: http://www.semelab.co.uk
Tentative 6/99

51.0 4.25 POSN 10.0 POWER MOSFET MODULE HIGH POWER AUDIO APPLICAT

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