2SK3299 DESCRIPTION 2SK3299 N-Channel device that features g

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2SK3299 DESCRIPTION 2SK3299 N-Channel device that features g

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FIELD EFFECT TRANSISTOR
2SK3299
DESCRIPTION
2SK3299 N-Channel device that features gate charge excellent switching characteristics, designed high voltage applications such switching power supply, adapter.
ORDERING INFORMATION
PART NUMBER 2SK3299 2SK3299-S 2SK3299-ZJ PACKAGE TO-220AB TO-262 TO-263
FEATURES
gate charge TYP. (VDD voltage rating on-state resistance RDS(on) 0.75 MAX. (VGS capability ratings mount package available
ABSOLUTE MAXIMUM RATINGS 25°C)
Drain Source Voltage (VGS Gate Source Voltage (VDS Drain Current (DC) 25°C) Drain Current (Pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) Tstg
+150 66.7
Total Power Dissipation 25°C) Total Power Dissipation 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2
Note2
Notes Duty Cycle Starting 25°C,
information this document subject change without notice. Before using this document, please confirm that this latest version.
devices/types available every country. Please check with local representative availability additional information.
Document D14060EJ1V0DS00 (1st edition) Date Published April 2000 CP(K) Printed Japan
mark shows major revised points.
1999,2000
2SK3299
ELECTRICAL CHARACTERISTICS(TA 25°C)
CHARACTERISTICS Drain Leakage Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) td(off) VF(S-D) di/dt A/µs TEST CONDITIONS VGS(on) 0.68 1580 12.3 0.75 MIN. TYP. MAX. ±100 UNIT
TEST CIRCUIT AVALANCHE CAPABILITY
D.U.T. BVDSS
TEST CIRCUIT SWITCHING TIME
D.U.T.
Wave Form
VGS(on)
Wave Form
Duty Cycle
td(on)
td(off)
toff
Starting
TEST CIRCUIT GATE CHARGE
D.U.T.
Data Sheet D14060EJ1V0DS00
2SK3299
TYPICAL CHARACTERISTICS
DRAIN CURRENT DRAIN SOURCE VOLTAGE Pulsed
FORWARD TRANSFER CHARACTERISTICS
Drain Current
Drain Source Voltage
Drain Current
Pulsed
0.01
Gate Source Voltage
GATE SOURCE CUTOFF VOLTAGE CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT
VGS(off) Gate Source Cutoff Voltage
Forward Transfer Admittance
Pulsed
Channel Temperature
Drain Current
(on) Drain Source On-State Resistance
DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE Pulsed
RDS(on) Drain Source On-State Resistance
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT Pulsed
Drain Current
Gate Source Voltage
Data Sheet D14060EJ1V0DS00
2SK3299
(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE
SOURCE DRAIN DIODE FORWARD VOLTAGE
Diode Forward Current
Pulsed Channel Temperature
0.01
Pulsed
Source Drain Voltage
CAPACITANCE DRAIN SOURCE VOLTAGE 10000
td(on), td(off), Switching Time
SWITCHING CHARACTERISTICS td(off) td(on)
Ciss, Coss, Crss Capacitance
Ciss 1000
Coss
Crss VGS= 1000
Drain Source Voltage
Drain Current
REVERSE RECOVERY TIME DRAIN CURRENT
Reverse Recovery Time
Drain Source Voltage
0.01
Drain Current
Gate Charge
Data Sheet D14060EJ1V0DS00
Gate Source Voltage
di/dt A/µs
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
2SK3299
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA
TOTAL POWER DISSIPATION CASE TEMPERATURE
Percentage Rated Power
Total Power Dissipation
Channel Temperature
Case Temperature
FORWARD BIAS SAFE OPERATING AREA
ID(pulse)
Drain Current
ID(DC)
25°C Single Pulse Drain Source Voltage
TRANSIENT THERMAL RESISTANCE PULSE WIDTH
Rth(t) Transient Thermal Resistance °C/W
Rth(CH-A) 83.3 °C/W
Rth(CH-C) 1.67 °C/W
0.01
100m
Pulse Width
Data Sheet D14060EJ1V0DS00
2SK3299
SINGLE AVALANCHE ENERGY INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY DERATING FACTOR
Single Avalanche Energy
Energy Defrating Factor
Starting
Inductive Load
Starting Starting Channel Temperature
Data Sheet D14060EJ1V0DS00
2SK3299
PACKAGE DRAWINGS (Unit
1)TO-220AB (MP-25)
3.0±0.3 10.6 MAX. 10.0 MIN. 15.5 MAX. MAX.
2)TO-262 (MP-25 Cut)
1.0±0.5
3.6±0.2
MAX. 1.3±0.2
1.3±0.2
(10)
MAX.
1.3±0.2
1.3±0.2
12.7 MIN.
12.7 MIN.
8.5±0.2
0.75±0.3 2.54 TYP.
0.5±0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.8±0.2
0.75±0.1 2.54 TYP.
0.5±0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.8±0.2
3)TO-263 (MP-25ZJ)
(10) 1.0±0.5 8.5±0.2 MAX. 1.3±0.2
EQUIVALENT CIRCUIT
Drain
5.7±0.4
1.4±0.2 0.7±0.2 2.54 TYP.
2.54 TYP.
0.5±0.2
Gate
Body Diode
Remark
Strong electric field, when exposed this device, cause destruction gate oxide ultimately degrade device operation. Steps must taken stop generation static electricity much possible, quickly dissipate once, when occurred.
2.8±0.2
1.Gate 2.Drain 3.Source 4.Fin (Drain)
Source
Data Sheet D14060EJ1V0DS00
2SK3299
information this document subject change without notice. Before using this document, please confirm that this latest version. part this document copied reproduced form means without prior written consent Corporation. Corporation assumes responsibility errors which appear this document. Corporation does assume liability infringement patents, copyrights other intellectual property rights third parties arising from device described herein other liability arising from such device. license, either express, implied otherwise, granted under patents, copyrights other intellectual property rights Corporation others. Descriptions circuits, software, other related information this document provided illustrative purposes semiconductor product operation application examples. incorporation these circuits, software, information design customer's equipment shall done under full responsibility customer. Corporation assumes responsibility losses incurred customer third parties arising from these circuits, software, information. While Corporation been making continuous effort enhance reliability semiconductor devices, possibility defects cannot eliminated entirely. minimize risks damage injury persons property arising from defect semiconductor device, customers must incorporate sufficient safety measures design, such redundancy, fire-containment, anti-failure features. devices classified into following three quality grades: "Standard", "Special", "Specific". Specific quality grade applies only devices developed based customer designated "quality assurance program" specific application. recommended applications device depend quality grade, indicated below. Customers must check quality grade each device before using particular application. Standard: Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade devices "Standard" unless otherwise specified NEC's Data Sheets Data Books. customers intend devices applications other than those specified Standard quality grade, they should contact sales representative advance.

2SK3299 DESCRIPTION 2SK3299 N-Channel device that features g

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