2SK2724 DESCRIPTION This product N-Channel Field Effect Tran

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2SK2724 DESCRIPTION This product N-Channel Field Effect Tran

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FIELD EFFECT POWER TRANSISTORS
2SK2724
DESCRIPTION
This product N-Channel Field Effect Transistor designed high current switching applications.
PACKAGE DIMENSIONS millimeter)
±0.2 ±0.2 ±0.2
10.0 ±0.3
FEATURES
On-Resistance
±0.1 ±0.2 12.0 ±0.2 13.5 MIN.
RDS(on)1 Max. (VGS RDS(on)2 Max. (VGS Ciss Ciss Typ. Built-in Protection Diode Isolated TO-220 package
15.0 ±0.3
±0.1 2.54
±0.2 ±0.2 2.54
±0.1 0.65 ±0.1 Gate Drain Source
ABSOLUTE MAXIMUM RATINGS
Drain Source Voltage Gate Source Voltage Drain Current (DC) Drain Current (Pulse)* Total Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature duty cycle VDSS VGSS ID(DC) ID(pulse) Tstg ±140 +150
MP-45F (ISOLATED TO-220)
Drain
Body Diode Gate
Gate Protection Diode Source
diode connected between gate source transistor serves protector against ESD. When this device actually used, additional protection circuit externally required voltage exceeding rated voltage applied this device.
information this document subject change without notice. Document D10515EJ1V0DS00 (1st edition) Date Published April 1996 Printed Japan
1996
2SK2724
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC Drain Source On-State Resistance SYMBOL RDS(on)1 RDS(on)2 Gate Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) |yfs| IDSS IGSS Ciss Coss Crss td(on) td(off) VF(S-D) di/dt A/µs VGS(on) TEST CONDITION MIN. TYP. MAX. UNIT
Test Circuit Switching Time
Test Circuit Gate Charge
D.U.T.
Wave Form
Wave Form
VGS(on)
D.U.T.
td(on) td(off)
toff
Duty Cycle
2SK2724
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION CASE TEMPERATURE
Percentage Rated Power
Total Power Dissipation
Case Temperature
Case Temperature DRAIN CURRENT DRAIN SOURCE VOLTAGE Pulsed
FORWARD BIAS SAFE OPERATING AREA
Drain Current
ID(DC)
Drain Current
ID(pulse)
Single Pulse
atio
Drain Source Voltage
Drain Source Voltage
FORWARD TRANSFER CHARACTERISTICS Pulsed
Drain Current
Gate Source Voltage
2SK2724
TRANSIENT THERMAL RESISTANCE PULSE WIDTH
rth(t) Transient Thermal Resistance °C/W
Rth(ch-a) 62.5 °C/W
Rth(ch-c) °C/W
0.01 Single Pulse 0.001
Pulse Width
RDS(on) Drain Source On-State Resistance
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT
|yfs| Forward Transfer Admittance
DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE Pulsed
Pulsed
Drain Current
RDS(on) Drain Source On-State Resistance
Gate Source Voltage GATE SOURCE CUTOFF VOLTAGE CHANNEL TEMPERATURE
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT
VGS(off) Gate Source Cutoff Voltage
Pulsed
Channel Temperature
Drain Current
2SK2724
SOURCE DRAIN DIODE FORWARD VOLTAGE Pulsed
RDS(on) Drain Source On-State Resistance
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE
Diode Forward Current
Channel Temperature
Source Drain Voltage
CAPACITANCE DRAIN SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
td(on), td(off), Switching Time
Ciss, Coss, Crss Capacitance
Ciss Coss
td(off) td(on)
Crss
VGS(on)
Drain Source Voltage
Drain Current
REVERSE RECOVERY TIME DRAIN CURRENT 1000 di/dt
DYNAMIC INPUT/OUTPUT CHARACTERISTICS Gate Charge
Drain Source Voltage
Diode Current
Gate Source Voltage
Reverse Recovery time
2SK2724
REFERENCE
Document Name semiconductor device reliability/quality control system. Quality grade semiconductor devices. Semiconductor device mounting technology manual. Semiconductor device package manual. Guide quality assurance semiconductor devices. Semiconductor selection guide. Power features application switching power supply. Application circuits using Power FET. Safe operating area Power FET. Document TEI-1202 IEI-1209 C10535E C10943X MEI-1202 X10679E TEA-1034 TEA-1035 TEA-1037
2SK2724
[MEMO]
2SK2724
part this document copied reproduced form means without prior written consent Corporation. Corporation assumes responsibility errors which appear this document. Corporation does assume liability infringement patents, copyrights other intellectual property rights third parties arising from device described herein other liability arising from such device. license, either express, implied otherwise, granted under patents, copyrights other intellectual property rights Corporation others. While Corporation been making continuous effort enhance reliability semiconductor devices, possibility defects cannot eliminated entirely. minimize risks damage injury persons property arising from defect semiconductor device, customer must incorporate sufficient safety measures design, such redundancy, fire-containment, anti-failure features. devices classified into following three quality grades: "Standard", "Special", "Specific". Specific quality grade applies only devices developed based customer designated "quality assurance program" specific application. recommended applications device depend quality grade, indicated below. Customers must check quality grade each device before using particular application. Standard: Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade devices "Standard" unless otherwise specified NEC's Data Sheets Data Books. customers intend devices applications other than those specified Standard quality grade, they should contact Sales Representative advance. Anti-radioactive design implemented this product.
94.11

2SK2724 DESCRIPTION This product N-Channel Field Effect Tran

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