2SK2723 PACKAGE DIMENSIONS millimeter) 10.0 DESCRIPTION

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2SK2723 PACKAGE DIMENSIONS millimeter) 10.0 DESCRIPTION

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Field Effect Power Transistors
2SK2723
PACKAGE DIMENSIONS millimeter)
10.0
DESCRIPTION
This product N-Channel Field Effect Transistor designed high current switching spplications.
15.0
On-Resistance (on) Max. (VGS (on) Max. (VGS Ciss Typ. Ciss Built-in Protection Diode Isolated TO-220 Package
2.54
2.54
13.5MIN.
12.0
FEATURES
0.65 1.Gate 2.Drain 3.Source
MP-45F (ISOLATED TO-220)
ABSOLUTE MAXIMUM RATINGS
Drain Source Voltage Gate Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Duty Cycle diode connected between gate source transistor serves protector against ESD. When this deveice acutally used, addtional protection circiut externally required voltage exceeding rated voltage applied this device. VDSS VGSS (DC) (pulse) Tstg ±100 +150
Gate Drain
Body Diode
Gate Protection Diode
Source
information this document subject change without notice. Document D10623EJ2V0DS00 (2nd edition) Date Published April 1996 Printed Japan
1994
2SK2723
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS Drain Source On-state Resistance Gate Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL (on) (on) (off)
TEST CONDITIONS (on) di/dt A/µs
MIN.
TYP.
MAX.
UNIT
IDSS IGSS Ciss Coss Crss (on) (off) (S-D)
Test Circuit Switching Time
Test Circuit Gate Charge
D.U.T
Wave Form
Wave Form
D.U.T (on)
Duty Cycle
(on) (on) toff
2SK2723
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA
TOTAL POWER DISSIPATION CASE TEMPERATURE
Percentage Rated Power
Total Power Dissipation
Case Temperature
Case Temperature DRAIN CURRENT DRAIN SOURCE VOLTAGE VGS=20V VGS=10V Pulsed
FORWARD BIAS SAFE OPERATING AREA ID(pulse)
ID(DC)
Drain Current
Drain Current
VGS=4V
Single Pulse
Drain Source Voltage
Drain Source Voltage
FORWARD TRANSFER CHARACTERISTICS 1000 Pulsed
Drain Current
Tch=-25°C 25°C 75°C 125°C VDS=10V
VGS- Gate Source Voltage
2SK2723
TRANSIENT THERMAL RESISTANCE PULSE WIDTH rth(t) Transient Thermal Resistance °C/W Rth(ch-a)=62.5°C/W
Rth(ch-c)=5.0°C/W
0.01 Single Pulse 0.001 100m
Pulse Width RDS(on) Drain Source On-State Resistance FORWARD TRANSFER ADMITTANCE DRAIN CURRENT Forward Transfer Admittance 1000 VDS=10V Pulsed DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE Pulsed
Tch=-25°C 25°C 75°C 125°C
ID=13A
Drain Current
Gate Source Voltage GATE SOURCE CUTOFF VOLTAGE CHANNEL TEMPERATURE
RDS(on) Drain Source On-State Resistance
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT VGS(off) Gate Source Cutoff Voltage Pulsed
VGS=4V
VGS=10V
Channel Temperature
Drain Current
2SK2723
RDS(on) Drain Source On-State Resistance
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE
Diode Forward Current
SOURCE DRAIN DIODE FORWARD VOLTAGE Pulsed
VGS=4V
VGS=10V VGS=0
VGS=10V
Channel Temperature
Source Drain Voltage
CAPACITANCE DRAIN SOURCE VOLTAGE
Ciss, Coss, Crss Capacitance td(on), td(off), Switching Time
SWITCHING CHARACTERISTICS td(off) td(on)
Ciss Coss
Crss
=30V =10V Drain Current
Drain Source Voltage
REVERSE RECOVERY TIME DIODE CURRENT
Reverse Recovery Time Drain Source Voltage
di/dt =100A/µ
VDD=12V
Dionde Current
Gate Charge
Gate Source Voltage
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
2SK2723
REFERENCE
Document Name semiconductor device reliability/quality control system. Quality grade semiconductor devices. Semiconductor device mounting technology manual. Semiconductor device package manual. Guide quality assurance semiconductor devices. Semiconductor selection guide. Power features application switching power supply. Application circuits using Power FET. Safe operating area Power FET. Document TEI-1202 IEI-1209 C10535E C10943X MEI-1202 X10679E TEA-1034 TEA-1035 TEA-1037
2SK2723
[MEMO]
2SK2723
part this document copied reproduced form means without prior written consent Corporation. Corporation assumes responsibility errors which appear this document. Corporation does assume liability infringement patents, copyrights other intellectual property rights third parties arising from device described herein other liability arising from such device. license, either express, implied otherwise, granted under patents, copyrights other intellectual property rights Corporation others. While Corporation been making continuous effort enhance reliability semiconductor devices, possibility defects cannot eliminated entirely. minimize risks damage injury persons property arising from defect semiconductor device, customer must incorporate sufficient safety measures design, such redundancy, fire-containment, anti-failure features. devices classified into following three quality grades: "Standard", "Special", "Specific". Specific quality grade applies only devices developed based customer designated "quality assurance program" specific application. recommended applications device depend quality grade, indicated below. Customers must check quality grade each device before using particular application. Standard: Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade devices "Standard" unless otherwise specified NEC's Data Sheets Data Books. customers intend devices applications other than those specified Standard quality grade, they should contact Sales Representative advance. Anti-radioactive design implemented this product.
94.11

2SK2723 PACKAGE DIMENSIONS millimeter) 10.0 DESCRIPTION

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