2SJ243 P-CHANNEL SWITCHING 2SJ243 P-channel vertical type th

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2SJ243 P-CHANNEL SWITCHING 2SJ243 P-channel vertical type th

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FIELD EFFECT TRANSISTOR
2SJ243
P-CHANNEL SWITCHING
2SJ243 P-channel vertical type that driven Because this driven voltage because necessary consider drive current, 2SJ243 ideal driving actuator power-saving systems,
PACKAGE DIMENSIONS
0.05 +0.1 -0.05
Moreover, 2SJ243 housed super small mini-mold package that help increase mounting density printed circuit board lower mounting cost, contributing miniaturization application systems.
such cameras headphone stereo systems.
+0.1
FEATURES
Small mounting area: about conventional mini-mold package (SC-70) directly driven automatically mounted
0.75 0.05
EQUIVALENT CIRCUIT
Drain
internal diode right figure parasitic diode. protection diode protect product from damage static electricity. there danger that extremely high voltage will applied across gate source actual circuit, gate protection circuit such external constant-voltage diode necessary.
Gate Gate protection diode Source Internal diode CONNECTIONS Source Drain Gate Marking:
ABSOLUTE MAXIMUM RATINGS
PARAMETER Drain Source Voltage Gate Source Voltage Drain Current (DC) Drain Current (Pulse) SYMBOL VDSS VGSS ID(DC) ID(pulse) Duty cycle 0.64 ceramic substrate used TEST CONDITIONS RATING ±100 ±200 UNIT
Total Power Dissipation Channel Temperature Operating Temperature Storage Temperature
Topt Tstg
+150
Document D11215EJ1V0DS00 (1st edition) Date Published June 1996 Printed Japan
1996
2SJ243
ELECTRICAL CHARACTERISTICS
PARAMETER Drain Cut-Off Current Gate Leakage Current Gate Cut-Off Voltage Forward Transfer Admittance Drain Source On-State Resistance Drain Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time SYMBOL IDSS IGSS VGS(off) |yfs| RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) td(off) -5V, VGS(on) TEST CONDITIONS -2.5 -4.0 -5.0 -1.6 ±0.1 -1.9 MIN. TYP. MAX. -1.0 ±3.0 -2.3 UNIT
SWITCHING TIME MEASUREMENT CIRCUIT CONDITIONS (Resistive Load)
Gate Voltage Waveform td(on) Drain Current Waveform Duty cycle td(off) VGS(on)
2SJ243
TYPICAL CHARACTERISTICS
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA
Total Power Dissipation
TOTAL POWER DISSIPATION AMBIENT TEMPERATURE 0.64 Using ceramic substrate
Derating Factor
Case Temperature
Ambient Temperature
TRANSFER CHARACTERISTICS Pulsed
Drain Current Forward Transfer Admittance
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT Pulsed
-100
-0.1 -0.01
-0.001 -1.0
-1.5 -2.0 -2.5 -3.0 -3.5 Gate Source Voltage
-4.0
-0.5 -1.0
-3.0 Drain Current
-100 -200
RDS(on) Drain Source On-State Resistance
RDS(on) Drain Source On-State Resistance
DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE Pulsed -0.1
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT -2.5 Pulsed
Gate Source Voltage
-0.3
-0.6
Drain Current
2SJ243
RDS(on) Drain Source On-State Resistance
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT Pulsed
CAPACITANCE DRAIN SOURCE VOLTAGE Ciss Coss Crss -0.3
Ciss, Coss, Crss Capacitance
-0.5
Gate Source Voltage
Drain Current
SWITCHING CHARACTERISTICS -200
SOURCE DRAIN DIODE FORWARD VOLTAGE -100 -0.3 -0.1 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1 -1.2 -1.3 Source Drain Voltage Pulsed
td(on), td(off), Switching Time
td(on)
td(off) -100 Drain Current -300
Diode Forward Current
2SJ243
REFERENCE
Document Name semiconductor device reliability/quality control system Quality grade semiconductor devices Semiconductor device mounting technology manual Guide quality assurance semiconductor devices Semiconductor selection guide Document TEI-1202 IEI-1209 C10535E MEI-1202 X10679E
2SJ243
[MEMO]
part this document copied reproduced form means without prior written consent Corporation. Corporation assumes responsibility errors which appear this document. Corporation does assume liability infringement patents, copyrights other intellectual property rights third parties arising from device described herein other liability arising from such device. license, either express, implied otherwise, granted under patents, copyrights other intellectual property rights Corporation others. While Corporation been making continuous effort enhance reliability semiconductor devices, possibility defects cannot eliminated entirely. minimize risks damage injury persons property arising from defect semiconductor device, customer must incorporate sufficient safety measures design, such redundancy, fire-containment, anti-failure features. devices classified into following three quality grades: "Standard", "Special", "Specific". Specific quality grade applies only devices developed based customer designated "quality assurance program" specific application. recommended applications device depend quality grade, indicated below. Customers must check quality grade each device before using particular application. Standard: Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade devices "Standard" unless otherwise specified NEC's Data Sheets Data Books. customers intend devices applications other than those specified Standard quality grade, they should contact Sales Representative advance. Anti-radioactive design implemented this product.
94.11

2SJ243 P-CHANNEL SWITCHING 2SJ243 P-channel vertical type th

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