µPA2754GR SWITCHING N-CHANNEL POWER DESCRIPTION µPA2754

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µPA2754GR SWITCHING N-CHANNEL POWER DESCRIPTION µPA2754

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FIELD EFFECT TRANSISTOR
µPA2754GR
SWITCHING N-CHANNEL POWER
DESCRIPTION
µPA2754GR Dual N-channel Field Effect Transistor designed Li-ion battery protection circuit power management application.
PACKAGE DRAWING (Unit:
Source Gate Drain Source Gate Drain ±0.3
+0.10 -0.05
FEATURES
Dual chip type on-state resistance RDS(on)1 14.5 MAX. (VGS RDS(on)2 15.0 MAX. (VGS RDS(on)4 18.6 MAX. (VGS Ciss: Ciss 1940 TYP. (VDS Built-in protection diode Small surface mount package (Power SOP8)
5.37 MAX.
1.44
MAX.
0.15
0.05 MIN.
±0.2 0.10
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
1.27 0.78 MAX. 0.40
+0.10 -0.05
0.12
µPA2754GR
ABSOLUTE MAXIMUM RATINGS 25°C, terminals connected.)
Drain Source Voltage (VGS Gate Source Voltage (VDS Drain Current (DC)
Note2 Note1 Note2
VDSS VGSS ID(DC) ID(pulse) Tstg
+150 12.1
Gate Protection Diode Source Gate Drain
EQUIVALENT CIRCUIT (1/2 circuit)
Drain Current (pulse)
Total Power Dissipation units) Total Power Dissipation unit) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note3 Note3
Note2
Body Diode
Notes Duty cycle 25°C, Mounted ceramic substrate 2000 Starting 25°C, Remark diode connected between gate source transistor serves protector against ESD. When this device actually used, additional protection circuit externally required voltage exceeding rated voltage applied this device.
information this document subject change without notice. Before using this document, please confirm that this latest version.
products and/or types available every country. Please check with Electronics sales representative availability additional information.
Document G15816EJ1V0DS00 (1st edition) Date Published January 2003 CP(K) Printed Japan
2001
µPA2754GR
ELECTRICAL CHARACTERISTICS 25°C, terminals connected.)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage
Note Note
SYMBOL IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 RDS(on)3 RDS(on)4
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
11.5 11.8 12.7 13.9 1940
Forward Transfer Admittance
Drain Source On-state Resistance Note
14.5 15.0 16.9 18.6
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Ciss Coss Crss td(on) td(off) VF(S-D)
di/dt A/µs
0.81
Note Pulsed: Duty Cycle
TEST CIRCUIT AVALANCHE CAPABILITY
D.U.T.
TEST CIRCUIT SWITCHING TIME
D.U.T.
Wave Form
BVDSS
Duty Cycle
Wave Form
td(on)
td(off) toff
Starting
TEST CIRCUIT GATE CHARGE
D.U.T.
Data Sheet G15816EJ1V0DS
µPA2754GR
TYPICAL CHARACTERISTICS 25°C, terminals connected.)
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA Percentage Rated Power
TOTAL POWER DISSIPATION AMBIENT TEMPERATURE Total Power Dissipation
Mounted ceramic substrate 2000 units
unit
Ambient Temperature
Ambient Temperature
FORWARD BIAS SAFE OPERATING AREA
1000
DS(on) Limited D(pulse)
Drain Current
D(DC)
Power Dissipation Limited
unit, Single pulse Mounted ceramic substrate 2000
0.01
Drain Source Voltage
TRANSIENT THERMAL RESISTANCE PULSE WIDTH
1000
rth(t) Transient Thermal Resistance °C/W
Rth(ch-A) 73.5°C/W
unit, Single pulse Mounted ceramic substrate 2000
Pulse Width
Data Sheet G15816EJ1V0DS
µPA2754GR
DRAIN CURRENT DRAIN SOURCE VOLTAGE
Pulsed
FORWARD TRANSFER CHARACTERISTICS
Pulsed
Drain Current
Drain Current
150°C 75°C 25°C -25°C
0.01
0.001
Drain Source Voltage
Gate Source Voltage
GATE CUT-OFF VOLTAGE CHANNEL TEMPERATURE Forward Transfer Admittance
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT
Pulsed -25°C 25°C 75°C 125°C
VGS(off) Gate Cut-off Voltage
0.01
Channel Temperature
Drain Current
RDS(on) Drain Source On-state Resistance
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT
Pulsed
DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE
Pulsed
1000
Drain Current
Gate Source Voltage
Data Sheet G15816EJ1V0DS
µPA2754GR
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE
Pulsed
CAPACITANCE DRAIN SOURCE VOLTAGE 10000 Ciss, Coss, Crss Capacitance
1000
0.01
Channel Temperature
Drain Source Voltage
SWITCHING CHARACTERISTICS
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Drain Source Voltage
d(off) td(on)
Drain Current
Gate Charge
SOURCE DRAIN DIODE FORWARD VOLTAGE
Pulsed
REVERSE RECOVERY TIME DIODE FORWARD CURRENT
1000
di/dt A/µs
Reverse Recovery Time
Diode Forward Current
0.01
VF(S-D) Source Drain Voltage
Diode Forward Current
Data Sheet G15816EJ1V0DS
Gate Source Voltage
td(on), td(off), Switching Time
µPA2754GR
SINGLE AVALANCHE CURRENT INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY DERATING FACTOR
Single Avalanche Current
Energy Derating Factor
12.1
Starting 25°C
0.01
Inductive Load
Starting Starting Channel Temperature
Data Sheet G15816EJ1V0DS
µPA2754GR
information this document current January, 2003. information subject change without notice. actual design-in, refer latest publications Electronics data sheets data books, etc., most up-to-date specifications Electronics products. products and/or types available every country. Please check with Electronics sales representative availability additional information. part this document copied reproduced form means without prior written consent Electronics. Electronics assumes responsibility errors that appear this document. Electronics does assume liability infringement patents, copyrights other intellectual property rights third parties arising from Electronics products listed this document other liability arising from such products. license, express, implied otherwise, granted under patents, copyrights other intellectual property rights Electronics others. Descriptions circuits, software other related information this document provided illustrative purposes semiconductor product operation application examples. incorporation these circuits, software information design customer's equipment shall done under full responsibility customer. Electronics assumes responsibility losses incurred customers third parties arising from these circuits, software information. While Electronics endeavors enhance quality, reliability safety Electronics products, customers agree acknowledge that possibility defects thereof cannot eliminated entirely. minimize risks damage property injury (including death) persons arising from defects Electronics products, customers must incorporate sufficient safety measures their design, such redundancy, fire-containment anti-failure features. Electronics products classified into following three quality grades: "Standard", "Special" "Specific". "Specific" quality grade applies only Electronics products developed based customerdesignated "quality assurance program" specific application. recommended applications Electronics product depend quality grade, indicated below. Customers must check quality grade each Electronics product before using particular application. "Standard": Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade Electronics products "Standard" unless otherwise expressly specified Electronics data sheets data books, etc. customers wish Electronics products applications intended Electronics, they must contact Electronics sales representative advance determine Electronics' willingness support given application. (Note) "NEC Electronics" used this statement means Electronics Corporation also includes majority-owned subsidiaries. "NEC Electronics products" means product developed manufactured Electronics defined above).
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µPA2754GR SWITCHING N-CHANNEL POWER DESCRIPTION µPA2754

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