µPA1890 P-CHANNEL FIELD EFFECT TRANSISTOR SWITCHING DESCRIPT

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µPA1890 P-CHANNEL FIELD EFFECT TRANSISTOR SWITCHING DESCRIPT

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FIELD EFFECT TRANSISTOR
µPA1890
P-CHANNEL FIELD EFFECT TRANSISTOR SWITCHING
DESCRIPTION
µPA1890 switching device which driven directly 4.0-V power source. µPA1890 features on-state resistance excellent switching characteristics, suitable applications such power switch portable machine
PACKAGE DRAWING (Unit:
:Drain1 :Source1 :Gate1 :Gate2 :Source2 :Drain2
MAX. 1.0±0.05 0.25 0.1±0.05 +0.15 -0.1
FEATURES
driven 4.0-V power source on-state resistance N-Channel RDS(on)1 MAX. (VGS RDS(on)2 MAX. (VGS RDS(on)3 MAX. (VGS P-Channel RDS(on)1 MAX. (VGS -2.5 RDS(on)2 MAX. (VGS -4.5 -2.5 RDS(on)3 MAX. (VGS -4.0 -2.5 Built-in protection diode against
0.145 ±0.055
3.15 ±0.15 ±0.1
±0.2 ±0.1 ±0.2
0.65
MAX. 0.10
ORDERING INFORMATION
PART NUMBER PACKAGE Power TSSOP8
0.27 +0.03 -0.08
µPA1890GR-9JG
EQUIVALENT CIRCUIT
Drain1 Drain2
ABSOLUTE MAXIMUM RATINGS 25°C)
N-Channel P-Channel Drain Source Voltage Gate Source Voltage Drain Current (DC) Drain Current (pulse)
Note1 Note2
VDSS VGSS ID(DC) ID(pulse) Tstg
30/-30 ±20/ ±6.0/ ±24/ +150
Gate1
Body Diode
Gate2
Body Diode
Gate Protection Diode
Source1
Gate Protection Diode
Source2
Total Power Dissipation Channel Temperature Storage Temperature
N-Channel
P-Channel
Notes Duty Cycle Mounted ceramic substrate 5000 Remark
keep good radiate condition, recommended that pins soldering print board.
diode connected between gate source transistor serves protector against ESD. When this device actually used, additional protection circuit externally required voltage exceeding rated voltage applied this device.
information this document subject change without notice. Before using this document, please confirm that this latest version.
devices/types available every country. Please check with local representative availability additional information.
Document G14762EJ2V0DS00 (2nd edition) Date Published 2001 CP(K) Printed Japan
mark shows major revised points.
2000
µPA1890
ELECTRICAL CHARACTERISTICS 25°C)
N-Channel
CHARACTERISTICS Drain Cut-off Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain Source On-state Resistance SYMBOL IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) td(off) VF(S-D) TEST CONDITIONS VGS(on) di/dt 0.82 MIN. TYP. MAX. UNIT
TEST CIRCUIT SWITCHING TIME
TEST CIRCUIT GATE CHARGE
D.U.T.
D.U.T. Duty Cycle
Wave Form
Wave Form
VGS(on)
td(on)
td(off) toff
Data Sheet G14762EJ2V0DS
µPA1890
P-Channel
CHARACTERISTICS Drain Cut-off Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain Source On-state Resistance SYMBOL IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) td(off) VF(S-D) TEST CONDITIONS -2.5 -2.5 -4.5 -2.5 -4.0 -2.5 -2.5 VGS(on) -5.0 di/dt -1.3 -1.8 0.83 MIN. TYP. MAX.
UNIT
-2.3
TEST CIRCUIT SWITCHING TIME
TEST CIRCUIT GATE CHARGE
D.U.T.
D.U.T. Duty Cycle
Wave Form
Wave Form
VGS(on)
td(on)
td(off) toff
Data Sheet G14762EJ2V0DS
µPA1890
TYPICAL CHARACTERISTICS 25°C)
N-Channel
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA
Drain Current
FORWARD BIAS SAFE OPERATING AREA
ited
Derating Factor
(pulse)
(DC)
Single Pulse Mounted Ceramic Substrate 5000 mm2x 0.01 PD(FET1):PD(FET2)
Ambient Temperature
Drain Source Voltage
DRAIN CURRENT DRAIN SOURCE VOLTAGE Pulsed
Drain Current
TRANSFER CHARACTERISTICS
Drain Current
0.01 0.001 0.0001 -25°C 25°C 75°C 125°C
Drain Source Voltage
0.00001 Gate Source Voltage
GATE SOURCE CUT-OFF VOLTAGE CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT
VGS(off) Gate Source Cut-off Voltage
Forward Transfer Admittance
-25°C 25°C 75°C 125°C
Channel Temperature
0.01 0.01
Drain Current
Data Sheet G14762EJ2V0DS
µPA1890
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT
125°C 75°C 25°C 25°C
RDS(on) Drain Source On-State Resistance
RDS(on) Drain Source On-State Resistance
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT
125°C 75°C 25°C
25°C
Drain Current
Drain Current
RDS(on) Drain Source On-State Resistance
(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT
DRAIN SOURCE STATE RESISTANCE CHANNEL TEMPERATURE
125°C 75°C
25°C 25°C
Drain Current
DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE
Channel Temperature
(on) Drain Source On-state Resistance
CAPACITANCE DRAIN SOURCE VOLTAGE 10000
Ciss, Coss, Crss Capacitance
1000 Ciss
Coss Crss
Drain Source Voltage
Gate Source Voltage
Data Sheet G14762EJ2V0DS
µPA1890
SWITCHING CHARACTERISTICS
td(on), td(off), Switching Time
SOURCE DRAIN DIODE FORWARD VOLTAGE
1000
td(off) td(on)
Source Drain Current
VGS(on)
Drain Current
0.01
VF(S-D) Source Drain Voltage
DYNAMIC INPUT CHARACTERISTICS
Gate Source Voltage
Gate Charge
Data Sheet G14762EJ2V0DS
µPA1890
P-Channel
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA
-100
FORWARD BIAS SAFE OPERATING AREA
Derating Factor
Drain Current
(pulse)
(DC)
-0.1
Single Pulse Mounted Ceramic Substrate 5000 mm2x -0.01 PD(FET1):PD(FET2)
Ambient Temperature
-0.1
-100
Drain Source Voltage
DRAIN CURRENT DRAIN SOURCE VOLTAGE Pulsed
TRANSFER CHARACTERISTICS -100
Drain Current
Drain Current
-4.5 -4.0
-0.1 -0.01 -0.001 -25°C 25°C 75°C 125°C
-0.0001
-0.2 -0.4 -0.6 -0.8 -1.0
-0.00001
Drain Source Voltage
GATE SOURCE CUT-OFF VOLTAGE CHANNEL TEMPERATURE
Gate Source Voltage
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT
VGS(off) Gate Source Cut-off Voltage
Forward Transfer Admittance
-25°C 25°C 75°C 125°C
Channel Temperature
0.01 -0.01
-0.1 Drain Current
-100
Data Sheet G14762EJ2V0DS
µPA1890
RDS(on) Drain Source On-State Resistance
RDS(on) Drain Source On-State Resistance
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT -4.0
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT -4.5
125°C 75°C 25°C
125°C
75°C 25°C
25°C
-25°C
-0.1
-1.0
-100
-0.1
-1.0
-100
Drain Current
Drain Current
DRAIN SOURCE STATE RESISTANCE CHANNEL TEMPERATURE -2.5 -4.0 -4.5
RDS(on) Drain Source On-State Resistance
125°C
75°C
25°C
(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT
25°C
-0.1
-1.0
-100
Drain Current
Channel Temperature
(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE
CAPACITANCE DRAIN SOURCE VOLTAGE 10000
Ciss, Coss, Crss Capacitance
-2.5
1000
Ciss
Coss Crss
Drain Source Voltage
-100
Gate Source Voltage
Data Sheet G14762EJ2V0DS
µPA1890
SWITCHING CHARACTERISTICS
td(on), td(off), Switching Time
SOURCE DRAIN DIODE FORWARD VOLTAGE
10000
Source Drain Current
VGS(on) td(off) td(on)
1000
-0.1
Drain Current
0.01
VF(S-D) Source Drain Voltage
DYNAMIC INPUT CHARACTERISTICS
Gate Source Voltage
Gate Charge
Data Sheet G14762EJ2V0DS
µPA1890
Common
1000 TRANSIENT THERMAL RESISTANCE PULSE WIDTH
rth(t) Transient Thermal Resistance °C/W
62.5°C/W
Mounted Ceramic Substrate 5000 Single Pulse PD(FET1):PD(FET2)
100m Pulse Width
1000
Data Sheet G14762EJ2V0DS
µPA1890
[MEMO]
Data Sheet G14762EJ2V0DS
µPA1890
information this document current May, 2001. information subject change without notice. actual design-in, refer latest publications NEC's data sheets data books, etc., most up-to-date specifications semiconductor products. products and/or types available every country. Please check with sales representative availability additional information. part this document copied reproduced form means without prior written consent NEC. assumes responsibility errors that appear this document. does assume liability infringement patents, copyrights other intellectual property rights third parties arising from semiconductor products listed this document other liability arising from such products. license, express, implied otherwise, granted under patents, copyrights other intellectual property rights others. Descriptions circuits, software other related information this document provided illustrative purposes semiconductor product operation application examples. incorporation these circuits, software information design customer's equipment shall done under full responsibility customer. assumes responsibility losses incurred customers third parties arising from these circuits, software information. While endeavours enhance quality, reliability safety semiconductor products, customers agree acknowledge that possibility defects thereof cannot eliminated entirely. minimize risks damage property injury (including death) persons arising from defects semiconductor products, customers must incorporate sufficient safety measures their design, such redundancy, fire-containment, anti-failure features. semiconductor products classified into following three quality grades: "Standard", "Special" "Specific". "Specific" quality grade applies only semiconductor products developed based customer-designated "quality assurance program" specific application. recommended applications semiconductor product depend quality grade, indicated below. Customers must check quality grade each semiconductor product before using particular application. "Standard": Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade semiconductor products "Standard" unless otherwise expressly specified NEC's data sheets data books, etc. customers wish semiconductor products applications intended NEC, they must contact sales representative advance determine NEC's willingness support given application. (Note) "NEC" used this statement means Corporation also includes majority-owned subsidiaries. "NEC semiconductor products" means semiconductor product developed manufactured defined above).

µPA1890 P-CHANNEL FIELD EFFECT TRANSISTOR SWITCHING DESCRIPT

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