µPA2782GR SWITCHING N-CHANNEL POWER FET/SCHOTTKY BARRIER DIODE

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µPA2782GR SWITCHING N-CHANNEL POWER FET/SCHOTTKY BARRIER DIODE

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FIELD EFFECT TRANSISTOR
µPA2782GR
SWITCHING N-CHANNEL POWER FET/SCHOTTKY BARRIER DIODE
DESCRIPTION
µPA2782GR N-Channel Power MOSFET, which built Schottky Barrier Diode inside. This product designed synchronous DC/DC converter application.
PACKAGE DRAWING (Unit:
Source Gate Drain
FEATURES
Built Schottky Barrier Diode on-state resistance RDS(on)1 TYP. (VGS RDS(on)2 TYP. (VGS RDS(on)3 TYP. (VGS Ciss: Ciss TYP. Small surface mount package (Power SOP8)
5.37 MAX.
+0.10 -0.05
±0.3
MAX.
1.44
0.15
0.05 MIN.
±0.2 0.10
1.27 0.78 MAX. 0.40
+0.10 -0.05
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
0.12
PA2782GR
ABSOLUTE MAXIMUM RATINGS 25°C. terminals connected.)
Drain Source Voltage (VGS Gate Source Voltage (VDS Drain Current (DC) [MOSFET] Drain Current (pulse)
Note1 Note2
EQUIVALENT CIRCUIT
Drain
VDSS VGSS ID(DC) ID(pulse)
Gate Protection Diode Source Gate Schottky Diode
Average Forward Current Total Power Dissipation Total Power Dissipation
[SCHOTTKY]
IF(AV) Tch,
Note3 Note3
[MOSFET] [SCHOTTKY]
Channel Junction Temperature
Storage Temperature Tstg Notes Duty Cycle Rectangle wave, Duty Cycle Mounted ceramic substrate 1200
Caution Strong electric field, when exposed this device, cause destruction gate oxide ultimately degrade device operation. Steps must taken stop generation static electricity much possible, quickly dissipate once, when occurred. Remark diode connected between gate source transistor serves protector against ESD. When this device actually used, additional protection circuit externally required voltage exceeding rated voltage applied this device.
information this document subject change without notice. Before using this document, please confirm that this latest version.
products and/or types available every country. Please check with Electronics sales representative availability additional information.
Document G16421EJ1V0DS00 (1st edition) Date Published April 2003 CP(K) Printed Japan
2002
µPA2782GR
ELECTRICAL CHARACTERISTICS 25°C, unless other wise noted. terminals connected.)
CHARACTERISTICS Zero Gate Voltage Drain Current
Note
SYMBOL IDSS
TEST CONDITIONS 125°C
MIN.
TYP.
MAX.
UNIT
Gate Leakage Current Gate Cut-off Voltage Drain Source On-state Resistance
Note
IGSS VGS(off) RDS(on)1 RDS(on)2 RDS(on)3
125°C 0.45 0.37
22.5
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage
Note
Ciss Coss Crss td(on) td(off) VF(S-D)
Reverse Recovery Time Reverse Recovery Charge
di/dt A/µs
Note Pulsed: Duty Cycle
TEST CIRCUIT SWITCHING TIME TEST CIRCUIT GATE CHARGE
D.U.T.
Wave Form
D.U.T.
Duty Cycle
Wave Form
td(on)
td(off) toff
Data Sheet G16421EJ1V0DS
µPA2782GR
TYPICAL CHARACTERISTICS 25°C. terminals connected.)
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA Percentage Rated Power
TOTAL POWER DISSIPATION AMBIENT TEMPERATURE
Total Power Dissipation
Mounted ceramic substrate 1200 MOSFET
SCHOTTKY
Ambient Temperature
Ambient Temperature
FORWARD BIAS SAFE OPERATING AREA
ID(pulse) ID(DC) RDS(on) Limited Power Dissipation Limited Single pulse Mounted ceramic substrate 1200 0.01 0.01
Drain Current
Drain Source Voltage
TRANSIENT THERMAL RESISTANCE PULSE WIDTH (MOSFET)
1000
Rth(t) Transient Thermal Resistance °C/W
Rth(ch-A) 62.5°C/W
Mounted ceramic substrate 1200 Single pulse
1000
Pulse Width
Data Sheet G16421EJ1V0DS
µPA2782GR
TRANSIENT THERMAL RESISTANCE PULSE WIDTH (SCHOTTKY)
1000
Rth(t) Transient Thermal Resistance °C/W
Rth(j-A) 125°C/W
Mounted ceramic substrate 1200 Single pulse
1000
Pulse Width DRAIN CURRENT DRAIN SOURCE VOLTAGE
Pulsed
GATE CUT-OFF VOLTAGE CHANNEL TEMPERATURE
VGS(off) Gate Cut-off Voltage
Drain Current
Drain Source Voltage
Channel Temperature
RDS(on) Drain Source On-state Resistance
Pulsed
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT
DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE
Pulsed
Drain Current
Gate Source Voltage
Data Sheet G16421EJ1V0DS
µPA2782GR
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE
Pulsed
CAPACITANCE DRAIN SOURCE VOLTAGE
10000
Ciss, Coss, Crss Capacitance
1000
0.01
Channel Temperature
Drain Source Voltage
SWITCHING CHARACTERISTICS
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Drain Source Voltage
td(off) td(on)
Drain Current
Gate Charge
SOURCE DRAIN DIODE FORWARD VOLTAGE
100000 10000 1000
SOURCE DRAIN DIODE REVERSE CURRENT
Diode Forward Current
125°C
25°C
Reverse Current
0.01
Pulsed
VF(S-D) Source Drain Voltage
Junction Temperature
Data Sheet G16421EJ1V0DS
Gate Source Voltage
td(on), td(off), Switching Time
µPA2782GR
information this document current April, 2003. information subject change without notice. actual design-in, refer latest publications Electronics data sheets data books, etc., most up-to-date specifications Electronics products. products and/or types available every country. Please check with Electronics sales representative availability additional information. part this document copied reproduced form means without prior written consent Electronics. Electronics assumes responsibility errors that appear this document. Electronics does assume liability infringement patents, copyrights other intellectual property rights third parties arising from Electronics products listed this document other liability arising from such products. license, express, implied otherwise, granted under patents, copyrights other intellectual property rights Electronics others. Descriptions circuits, software other related information this document provided illustrative purposes semiconductor product operation application examples. incorporation these circuits, software information design customer's equipment shall done under full responsibility customer. Electronics assumes responsibility losses incurred customers third parties arising from these circuits, software information. While Electronics endeavors enhance quality, reliability safety Electronics products, customers agree acknowledge that possibility defects thereof cannot eliminated entirely. minimize risks damage property injury (including death) persons arising from defects Electronics products, customers must incorporate sufficient safety measures their design, such redundancy, fire-containment anti-failure features. Electronics products classified into following three quality grades: "Standard", "Special" "Specific". "Specific" quality grade applies only Electronics products developed based customerdesignated "quality assurance program" specific application. recommended applications Electronics product depend quality grade, indicated below. Customers must check quality grade each Electronics product before using particular application. "Standard": Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade Electronics products "Standard" unless otherwise expressly specified Electronics data sheets data books, etc. customers wish Electronics products applications intended Electronics, they must contact Electronics sales representative advance determine Electronics' willingness support given application. (Note) "NEC Electronics" used this statement means Electronics Corporation also includes majority-owned subsidiaries. "NEC Electronics products" means product developed manufactured Electronics defined above).
11-1

µPA2782GR SWITCHING N-CHANNEL POWER FET/SCHOTTKY BARRIER DIODE

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