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µPA2713GR SWITCHING P-CHANNEL POWER DESCRIPTION µPA2713
Top Searches for this datasheetFIELD EFFECT TRANSISTOR µPA2713GR SWITCHING P-CHANNEL POWER DESCRIPTION µPA2713GR P-channel Field Effect Transistor designed power management applications notebook computers Li-ion battery protection circuit. PACKAGE DRAWING (Unit: Source Gate Drain FEATURES on-state resistance RDS(on)1 MAX. (VGS -4.0 RDS(on)2 MAX. (VGS -4.5 -4.0 RDS(on)3 MAX. (VGS -4.0 -4.0 Ciss: Ciss 1600 TYP. Small surface mount package (Power SOP8) 5.37 MAX. +0.10 -0.05 ±0.3 MAX. 1.44 0.15 0.05 MIN. ±0.2 0.10 ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 1.27 0.78 MAX. 0.40 +0.10 -0.05 0.12 µPA2713GR ABSOLUTE MAXIMUM RATINGS 25°C, terminals connected.) Drain Source Voltage (VGS Gate Source Voltage (VDS Drain Current (DC) Drain Current (pulse) Note1 Note2 Note3 VDSS VGSS ID(DC) ID(pulse) Tstg +150 Source Gate Total Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature EQUIVALENT CIRCUIT Drain Single Avalanche Current Single Avalanche Energy Notes Note4 Note4 Body Diode Duty Cycle Mounted ceramic substrate 1200 Mounted glass epoxy board inch inch mm), Starting 25°C, Remark Strong electric field, when exposed this device, cause destruction gate oxide ultimately degrade device operation. Steps must taken stop generation static electricity much possible, quickly dissipate once, when occurred. information this document subject change without notice. Before using this document, please confirm that this latest version. products and/or types available every country. Please check with Electronics sales representative availability additional information. Document G15981EJ1V0DS00 (1st edition) Date Published January 2003 CP(K) Printed Japan 2002 µPA2713GR ELECTRICAL CHARACTERISTICS 25°C, terminals connected.) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Note Note Note SYMBOL IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 RDS(on)3 TEST CONDITIONS -4.0 -4.0 -4.5 -4.0 -4.0 -4.0 -4.0 MIN. TYP. MAX. UNIT m100 -1.0 1600 -2.5 Forward Transfer Admittance Drain Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) td(off) VF(S-D) di/dt A/µs 0.81 Note Pulsed: Duty Cycle TEST CIRCUIT AVALANCHE CAPABILITY D.U.T. TEST CIRCUIT SWITCHING TIME D.U.T. VGS(-) VDS(-) Wave Form BVDSS VGS(-) Wave Form td(on) Duty Cycle td(off) toff Starting TEST CIRCUIT GATE CHARGE D.U.T. Data Sheet G15981EJ1V0DS µPA2713GR TYPICAL CHARACTERISTICS 25°C, terminals connected.) DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA Percentage Rated Power TOTAL POWER DISSIPATION AMBIENT TEMPERATURE Total Power Dissipation Mounted ceramic substrate 1200 Ambient Temperature Ambient Temperature FORWARD BIAS SAFE OPERATING AREA D(pulse) Drain Current D(DC) DS(on) ited Power Dissipation ited Single pulse ounted ceram substrate 1200 0.01 0.01 Drain Source Voltage TRANSIENT THERMAL RESISTANCE PULSE WIDTH 1000 rth(t) Transient Thermal Resistance °C/W Rth(ch-A) 62.5°C/W Single pulse Mounted ceramic substrate 1200 0.01 1000 Pulse Width Data Sheet G15981EJ1V0DS µPA2713GR DRAIN CURRENT DRAIN SOURCE VOLTAGE Pulsed -4.5 FORWARD TRANSFER CHARACTERISTICS Pulsed Drain Current Drain Current -4.0 -55°C 25°C 75°C 150°C 0.01 Drain Source Voltage Gate Source Voltage GATE CUT-OFF VOLTAGE CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE DRAIN CURRENT Forward Transfer Admittance -55°C Pulsed 25°C 75°C 150°C VGS(off) Gate Cut-off Voltage Channel Temperature Drain Current RDS(on) Drain Source On-state Resistance RDS(on) Drain Source On-state Resistance DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT Pulsed DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE Pulsed -4.0 -4.5 -4.0 Drain Current Gate Source Voltage Data Sheet G15981EJ1V0DS µPA2713GR RDS(on) Drain Source On-state Resistance DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE -4.5 -4.0 Pulsed CAPACITANCE DRAIN SOURCE VOLTAGE 10000 Ciss, Coss, Crss Capacitance -4.0 1000 0.01 Channel Temperature Drain Source Voltage SWITCHING CHARACTERISTICS 1000 DYNAMIC INPUT/OUTPUT CHARACTERISTICS Drain Source Voltage td(off) td(on) Drain Current Gate Charge SOURCE DRAIN DIODE FORWARD VOLTAGE 1000 Pulsed REVERSE RECOVERY TIME DIODE FORWARD CURRENT 1000 di/dt A/µs Reverse Recovery Time Diode Forward Current 0.01 VF(S-D) Source Drain Voltage Diode Forward Current Data Sheet G15981EJ1V0DS Gate Source Voltage td(on), td(off), Switching Time µPA2713GR SINGLE AVALANCHE CURRENT INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR Single Avalanche Current Energy Derating Factor Starting 25°C 0.01 Inductive Load Starting Starting Channel Temperature Data Sheet G15981EJ1V0DS µPA2713GR information this document current January, 2003. information subject change without notice. actual design-in, refer latest publications Electronics data sheets data books, etc., most up-to-date specifications Electronics products. products and/or types available every country. 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