µPA2706GR SWITCHING N-CHANNEL POWER DESCRIPTION µPA2706

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µPA2706GR SWITCHING N-CHANNEL POWER DESCRIPTION µPA2706

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FIELD EFFECT TRANSISTOR
µPA2706GR
SWITCHING N-CHANNEL POWER
DESCRIPTION
µPA2706GR N-Channel Field Effect Transistor designed DC/DC converters power management applications notebook computers.
PACKAGE DRAWING (Unit:
Source Gate Drain
FEATURES
on-state resistance RDS(on)1 MAX. (VGS RDS(on)2 22.5 MAX. (VGS Ciss: Ciss TYP. (VDS Small surface mount package (Power SOP8)
5.37 MAX.
+0.10 -0.05
±0.3
MAX.
1.44
0.15
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
0.05 MIN.
±0.2 0.10
1.27 0.78 MAX. 0.40
+0.10 -0.05
0.12
PA2706GR
ABSOLUTE MAXIMUM RATINGS 25°C, terminals connected)
Drain Source Voltage (VGS Gate Source Voltage (VDS Drain Current (DC) Drain Current (pulse)
Note1 Note2
EQUIVALENT CIRCUIT
Drain
VDSS VGSS ID(DC) ID(pulse) Tstg
12.1
Gate Body Diode
Total Power Dissipation 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note3 Note3
Gate Protection Diode
Source
Notes Duty Cycle Mounted ceramic substrate 1200 Starting 25°C, Caution Strong electric field, when exposed this device, cause destruction gate oxide ultimately degrade device operation. Steps must taken stop generation static electricity much possible, quickly dissipate once, when occurred. Remark diode connected between gate source transistor serves protector against ESD. When this device actually used, additional protection circuit externally required voltage exceeding rated voltage applied this device.
information this document subject change without notice. Before using this document, please confirm that this latest version.
products and/or types available every country. Please check with Electronics sales representative availability additional information.
Document G16236EJ1V0DS00 (1st edition) Date Published April 2003 CP(K) Printed Japan
2003
µPA2706GR
ELECTRICAL CHARACTERISTICS 25°C, terminals connected.)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Note Drain Source On-state Resistance
Note
SYMBOL IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 RDS(on)3
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
22.5
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Note
Ciss Coss Crss td(on) td(off) VF(S-D)
di/dt A/µs
0.84
Note Pulsed: Duty Cycle
TEST CIRCUIT AVALANCHE CAPABILITY
D.U.T.
TEST CIRCUIT SWITCHING TIME
D.U.T.
Wave Form
BVDSS
Wave Form
td(on)
Duty Cycle
td(off) toff
Starting
TEST CIRCUIT GATE CHARGE
D.U.T.
Data Sheet G16236EJ1V0DS
µPA2706GR
TYPICAL CHARACTERISTICS 25°C)
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA Percentage Rated Power
TOTAL POWER DISSIPATION AMBIENT TEMPERATURE
Total Power Dissipation
Mounted ceramic substrate 1200
Ambient Temperature
Ambient Temperature
FORWARD BIAS SAFE OPERATING AREA
ID(pulse)
Drain Current
ID(DC)
RDS(on) Limited
Power Dissipation Limited 25°C Single Pulse Mounted ceramic substrate 1200
0.01 0.01
Drain Source Voltage
TRANSIENT THERMAL RESISTANCE PULSE WIDTH
1000
Rth(t) Transient Thermal Resistance °C/W
Rth(ch-A) 62.5°C/W
Mounted ceramic substrate 1200 Single Pulse 25°C
1000
Pulse Width
Data Sheet G16236EJ1V0DS
µPA2706GR
DRAIN CURRENT DRAIN SOURCE VOLTAGE
Pulsed 0.01
FORWARD TRANSFER CHARACTERISTICS
Pulsed
Drain Current
Drain Current
-55°C 25°C 75°C 150°C
Drain Source Voltage
Gate Source Voltage
GATE CUT-OFF VOLTAGE CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT Forward Transfer Admittance
Pulsed
VGS(off) Gate Cut-off Voltage
-55°C 25°C 75°C 150°C
0.01
Channel Temperature
Drain Current
RDS(on) Drain Source On-state Resistance
Pulsed
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT
DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE
Pulsed
Drain Current
Gate Source Voltage
Data Sheet G16236EJ1V0DS
µPA2706GR
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE
Pulsed
CAPACITANCE DRAIN SOURCE VOLTAGE
1000
Ciss, Coss, Crss Capacitance
Ciss
Coss Crss
0.01
Channel Temperature
Drain Source Voltage
SWITCHING CHARACTERISTICS
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Drain Source Voltage
td(off) td(on)
Drain Current
Gate Charge
SOURCE DRAIN DIODE FORWARD VOLTAGE
1000
REVERSE RECOVERY TIME DIODE FORWARD CURRENT Reverse Recovery Time
Pulsed
Diode Forward Current
di/dt A/µs
0.01
VF(S-D) Source Drain Voltage
Diode Forward Current
Data Sheet G16236EJ1V0DS
Gate Source Voltage
td(on), td(off), Switching Time
µPA2706GR
SINGLE AVALANCHE CURRENT INDUCTIVE LOAD
Starting 25°C
SINGLE AVALANCHE ENERGY DERATING FACTOR
Single Avalanche Current
Energy Derating Factor
12.1
0.00001
0.0001 0.001 0.01
Inductive Load
Starting Starting Channel Temperature
Data Sheet G16236EJ1V0DS
µPA2706GR
information this document current April, 2003. information subject change without notice. actual design-in, refer latest publications Electronics data sheets data books, etc., most up-to-date specifications Electronics products. products and/or types available every country. Please check with Electronics sales representative availability additional information. part this document copied reproduced form means without prior written consent Electronics. Electronics assumes responsibility errors that appear this document. Electronics does assume liability infringement patents, copyrights other intellectual property rights third parties arising from Electronics products listed this document other liability arising from such products. license, express, implied otherwise, granted under patents, copyrights other intellectual property rights Electronics others. Descriptions circuits, software other related information this document provided illustrative purposes semiconductor product operation application examples. incorporation these circuits, software information design customer's equipment shall done under full responsibility customer. Electronics assumes responsibility losses incurred customers third parties arising from these circuits, software information. While Electronics endeavors enhance quality, reliability safety Electronics products, customers agree acknowledge that possibility defects thereof cannot eliminated entirely. minimize risks damage property injury (including death) persons arising from defects Electronics products, customers must incorporate sufficient safety measures their design, such redundancy, fire-containment anti-failure features. Electronics products classified into following three quality grades: "Standard", "Special" "Specific". "Specific" quality grade applies only Electronics products developed based customerdesignated "quality assurance program" specific application. recommended applications Electronics product depend quality grade, indicated below. Customers must check quality grade each Electronics product before using particular application. "Standard": Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade Electronics products "Standard" unless otherwise expressly specified Electronics data sheets data books, etc. customers wish Electronics products applications intended Electronics, they must contact Electronics sales representative advance determine Electronics' willingness support given application. (Note) "NEC Electronics" used this statement means Electronics Corporation also includes majority-owned subsidiaries. "NEC Electronics products" means product developed manufactured Electronics defined above).
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µPA2706GR SWITCHING N-CHANNEL POWER DESCRIPTION µPA2706

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