µPA1731 SWITCHING P-CHANNEL POWER INDUSTRIAL DESCRIPTION

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µPA1731 SWITCHING P-CHANNEL POWER INDUSTRIAL DESCRIPTION

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FIELD EFFECT TRANSISTOR
µPA1731
SWITCHING P-CHANNEL POWER INDUSTRIAL
DESCRIPTION
µPA1731 P-Channel Field Effect Transistor designed power management applications notebook computers Li-ion battery protection circuit.
PACKAGE DRAWING (Unit
FEATURES
on-resistance
1.44
1,2,3 Source Gate 5,6,7,8 Drain
RDS(on)1 10.3 TYP. (VGS -5.0
Max.
5.37 Max.
±0.3
+0.10 -0.05
RDS(on)2 14.6 TYP. (VGS -4.5 -5.0 RDS(on)3 16.5 TYP. (VGS -4.0 -5.0 Ciss Ciss =2600 TYP. Built-in protection diode Small surface mount package (Power SOP8)
0.15
0.05 Min.
±0.2 0.10
1.27 0.40
0.78 Max. 0.12
+0.10 -0.05
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
µPA1731G
ABSOLUTE MAXIMUM RATINGS 25°C, terminals connected.)
Drain Source Voltage (VGS Gate Source Voltage (VDS Drain Current (DC) Drain Current (pulse)
Note1 Note2
EQUIVALENT CIRCUIT
Drain
VDSS VGSS ID(DC) ID(pulse) Tstg
Gate Gate Protection Diode
Body Diode
Total Power Dissipation 25°C) Channel Temperature Storage Temperature
Source
Notes Duty Cycle Mounted ceramic substrate 1200 Remark diode connected between gate source transistor serves protector against ESD. When this device actually used, additional protection circuit externally required voltage exceeding rated voltage applied this device.
information this document subject change without notice. Before using this document, please confirm that this latest version.
devices/types available every country. Please check with local representative availability additional information.
Document G14285EJ2V1DS00 (2nd edition) Date Published 2001 CP(K) Printed Japan
mark shows major revised points.
1999
µPA1731
ELECTRICAL CHARACTERISTICS terminals connected.)
CHARACTERISTICS Drain Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 RDS(on)3 Gate Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) IDSS IGSS Ciss Coss Crss td(on) td(off) VF(S-D) TEST CONDITIONS -5.0 -4.5 -5.0 -4.0 -5.0 -5.0 -5.0 VGS(on) di/dt 2600 0.80 MIN. TYP. 10.3 14.6 16.5 MAX. 13.0 19.5 22.0 UNIT
-1.0
-1.6
18.0
-2.5
TEST CIRCUIT SWITCHING TIME
D.U.T.
Wave Form
TEST CIRCUIT GATE CHARGE
D.U.T.
(on)
Duty Cycle
Wave Form
(on) (off) toff
Data Sheet G14285EJ2V1DS
µPA1731
TYPICAL CHARACTERISTICS
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA
Percentage Rated Power
TOTAL POWER DISSIPATION AMBIENT TEMPERATURE
Total Power Dissipation
Mounted ceramic substrate 1200
Ambient Temperature
Ambient Temperature
-100
FORWARD BIAS SAFE OPERATING AREA
ID(pulse)
Drain Current
ID(DC)
Remark Mounted ceramic substrate 1200
-0.1 25°C -0.01 Single Pulse -0.1
-100
Drain Source Voltage
TRANSIENT THERMAL RESISTANCE PULSE WIDTH 1000
rth(t) Transient Thermal Resistance °C/W
Rth(ch-A) 62.5°C
0.01
Mounted ceramic substrate 1200 Single Pulse
0.001
100µ
1000
Pulse Width
Data Sheet G14285EJ2V1DS
µPA1731
FORWARD TRANSFER CHARACTERISTICS -100 Pulsed
Drain Current
DRAIN CURRENT DRAIN SOURCE VOLTAGE
Pulsed
-4.5 -4.0
-0.1 -0.01
-0.001 -0.0001 -1.0 -2.0 -3.0 -4.0
Drain Current
-50°C -25°C 25°C 75°C 125°C 150°C
-0.2
-0.4
-0.6
-0.8
Gate Source Voltage
Drain Source Voltage
|yfs| Forward Transfer Admittance
-50°C -25°C 25°C 75°C 125°C 150°C
RDS(on) Drain Source On-State Resistance
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT
DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE Pulsed
-5.0
Pulsed
-0.1
-100
Drain Current
Gate Source Voltage
RDS(on) Drain Source On-state Resistance
VGS(off) Gate Source Cut-off Voltage
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT Pulsed -4.0 -4.5
GATE SOURCE CUT-OFF VOLTAGE CHANNEL TEMPERATURE -2.0
-1.5
-1.0
-0.5
-0.1
-100
-100
Drain Current
Channel Temperature
Data Sheet G14285EJ2V1DS
µPA1731
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE Pulsed -5.0
Diode Forward Current
SOURCE DRAIN DIODE FORWARD VOLTAGE
-4.0 -4.5
-4.5
0.01
0.001 Source Drain Voltage
Channel Temperature
CAPACITANCE DRAIN SOURCE VOLTAGE 0000
td(on), td(off), Switching Time
SWITCHING CHARACTERISTICS td(off) td(on)
Ciss, Coss, Crss Capacitance
Ciss Coss Crss -100
-100
-0.1
-100
-0.1
Drain Source Voltage
Drain Current
REVERSE RECOVERY TIME DIODE CURRENT 10000
Reverse Recovery Time
Drain Source Voltage
1000
-0.1
-100
Diode Current
Gate Charge
Gate Source Voltage
di/dt
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Data Sheet G14285EJ2V1DS
µPA1731
[MEMO]
Data Sheet G14285EJ2V1DS
µPA1731
[MEMO]
Data Sheet G14285EJ2V1DS
µPA1731
information this document current May, 2001. information subject change without notice. actual design-in, refer latest publications NEC's data sheets data books, etc., most up-to-date specifications semiconductor products. products and/or types available every country. Please check with sales representative availability additional information. part this document copied reproduced form means without prior written consent NEC. assumes responsibility errors that appear this document. does assume liability infringement patents, copyrights other intellectual property rights third parties arising from semiconductor products listed this document other liability arising from such products. license, express, implied otherwise, granted under patents, copyrights other intellectual property rights others. Descriptions circuits, software other related information this document provided illustrative purposes semiconductor product operation application examples. incorporation these circuits, software information design customer's equipment shall done under full responsibility customer. assumes responsibility losses incurred customers third parties arising from these circuits, software information. While endeavours enhance quality, reliability safety semiconductor products, customers agree acknowledge that possibility defects thereof cannot eliminated entirely. minimize risks damage property injury (including death) persons arising from defects semiconductor products, customers must incorporate sufficient safety measures their design, such redundancy, fire-containment, anti-failure features. semiconductor products classified into following three quality grades: "Standard", "Special" "Specific". "Specific" quality grade applies only semiconductor products developed based customer-designated "quality assurance program" specific application. recommended applications semiconductor product depend quality grade, indicated below. Customers must check quality grade each semiconductor product before using particular application. "Standard": Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade semiconductor products "Standard" unless otherwise expressly specified NEC's data sheets data books, etc. customers wish semiconductor products applications intended NEC, they must contact sales representative advance determine NEC's willingness support given application. (Note) "NEC" used this statement means Corporation also includes majority-owned subsidiaries. "NEC semiconductor products" means semiconductor product developed manufactured defined above).

µPA1731 SWITCHING P-CHANNEL POWER INDUSTRIAL DESCRIPTION

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