µPA1727 SWITCHING N-CHANNEL POWER DESCRIPTION µPA1727 N

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µPA1727 SWITCHING N-CHANNEL POWER DESCRIPTION µPA1727 N

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FIELD EFFECT TRANSISTOR
µPA1727
SWITCHING N-CHANNEL POWER
DESCRIPTION
µPA1727 N-Channel Field Effect Transistor designed high current switching applications.
PACKAGE DRAWING (Unit:
Source Gate Drain
FEATURES
Single chip type on-state resistance RDS(on)1 TYP. (VGS RDS(on)2 TYP. (VGS RDS(on)3 TYP. (VGS Ciss: Ciss 2400 TYP. Built-in protection diode Small surface mount package (Power SOP8)
5.37 Max.
+0.10 -0.05
±0.3
Max.
1.44
0.15
0.05 Min.
±0.2 0.10
1.27 0.40
0.78 Max. 0.12
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
+0.10 -0.05
µPA1727G
ABSOLUTE MAXIMUM RATINGS 25°C, terminals connected.)
Drain Source Voltage (VGS Gate Source Voltage (VDS Drain Current (DC) Drain Current (Pulse)
Note1 Note2
VDSS VGSS ID(DC) ID(pulse) Tstg
Gate Protection Diode Source Gate Body Diode Drain
EQUIVALENT CIRCUIT
Total Power Dissipation 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note3 Note3
Notes Duty Cycle Mounted ceramic substrate 1200 25°C, Starting Remark diode connected between gate source transistor serves protector against ESD. When this device actually used, additional protection circuit externally required voltage exceeding rated voltage applied this device.
information this document subject change without notice. Before using this document, please confirm that this latest version.
devices/types available every country. Please check with local representative availability additional information.
Document G14330EJ3V0DS00 (3rd edition) Date Published March 2002 CP(K) Printed Japan
mark shows major revised points.
1999, 2000, 2001
µPA1727
ELECTRICAL CHARACTERISTICS 25°C, terminals connected.)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain Source On-state Resistance SYMBOL IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) td(off) VF(S-D) di/dt TEST CONDITIONS 2400 MIN. TYP. MAX. UNIT
TEST CIRCUIT AVALANCHE CAPABILITY
D.U.T. BVDSS
TEST CIRCUIT SWITCHING TIME
D.U.T.
Wave Form
Wave Form
Duty Cycle
td(on)
td(off)
toff
Starting
TEST CIRCUIT GATE CHARGE
D.U.T.
Data Sheet G14330EJ3V0DS
µPA1727
TYPICAL CHARACTERISTICS 25°C, terminals connected.)
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA
TOTAL POWER DISSIPATION CASE TEMPERATURE
Total Power Dissipation
Mounted ceramic substrate 1200
Percentage Rated Power
Case Temperature
Case Temperature
FORWARD BIAS SAFE OPERATING AREA
Drain Current
ID(pulse)
ID(DC)
Diss
25°C Single Pulse
Remark Mounted ceramic substrate 1200
0.01
Drain Source Voltage
TRANSIENT THERMAL RESISTANCE PULSE WIDTH
rth(t) Transient Thermal Resistance °C/W
1000
Rth(ch-A) 62.5°C/W
0.01
Mounted ceramic substrate 1200 Single Pulse, 25°C
100µ
100m
1000
Pulse Width
Data Sheet G14330EJ3V0DS
µPA1727
FORWARD TRANSFER CHARACTERISTICS Pulsed DRAIN CURRENT DRAIN SOURCE VOLTAGE
Drain Current
Drain Current
150°C 75°C 25°C -25°C
4.5V
Pulsed
0.01
Drain Source Voltage
Gate Source Voltage
RDS(on) Drain Source On-state Resistance
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT
DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE Pulsed
Forward Transfer Admittance
Pulsed
150°C 75°C 25°C -25°C
0.01 0.01
Drain Current
Gate Source Voltage
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT
GATE SOURCE CUT-OFF VOLTAGE CHANNEL TEMPERATURE
VGS(off) Gate Source Cut-off Voltage
Pulsed
Drain Current
Channel Temperature
Data Sheet G14330EJ3V0DS
µPA1727
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE
SOURCE DRAIN DIODE FORWARD VOLTAGE Pulsed
Diode Forward Current
0.01
Channel Temperature
Source Drain Voltage
CAPACITANCE DRAIN SOURCE VOLTAGE 10000
SWITCHING CHARACTERISTICS 1000
td(on), td(off), Switching Time
Ciss, Coss, Crss Capacitance
Ciss
td(off) td(on)
1000 Coss Crss
Drain Source Voltage
Drain Current
REVERSE RECOVERY TIME DRAIN CURRENT 1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS Gate Charge
Drain Source Voltage
Reverse Recovery Time
Drain Current
Gate Source Voltage
di/dt
Data Sheet G14330EJ3V0DS
µPA1727
SINGLE AVALANCHE CURRENT INDUCTIVE LOAD
Single Avalanche Current Energy Derating Factor
SINGLE AVALANCHE ENERGY DERATING FACTOR
Inductive Load
Starting Starting Channel Temperature
Data Sheet G14330EJ3V0DS
µPA1727
[MEMO]
Data Sheet G14330EJ3V0DS
µPA1727
information this document current March, 2002. information subject change without notice. actual design-in, refer latest publications NEC's data sheets data books, etc., most up-to-date specifications semiconductor products. products and/or types available every country. Please check with sales representative availability additional information. part this document copied reproduced form means without prior written consent NEC. assumes responsibility errors that appear this document. does assume liability infringement patents, copyrights other intellectual property rights third parties arising from semiconductor products listed this document other liability arising from such products. license, express, implied otherwise, granted under patents, copyrights other intellectual property rights others. Descriptions circuits, software other related information this document provided illustrative purposes semiconductor product operation application examples. incorporation these circuits, software information design customer's equipment shall done under full responsibility customer. assumes responsibility losses incurred customers third parties arising from these circuits, software information. While endeavours enhance quality, reliability safety semiconductor products, customers agree acknowledge that possibility defects thereof cannot eliminated entirely. minimize risks damage property injury (including death) persons arising from defects semiconductor products, customers must incorporate sufficient safety measures their design, such redundancy, fire-containment, anti-failure features. semiconductor products classified into following three quality grades: "Standard", "Special" "Specific". "Specific" quality grade applies only semiconductor products developed based customer-designated "quality assurance program" specific application. recommended applications semiconductor product depend quality grade, indicated below. Customers must check quality grade each semiconductor product before using particular application. "Standard": Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade semiconductor products "Standard" unless otherwise expressly specified NEC's data sheets data books, etc. customers wish semiconductor products applications intended NEC, they must contact sales representative advance determine NEC's willingness support given application. (Note) "NEC" used this statement means Corporation also includes majority-owned subsidiaries. "NEC semiconductor products" means semiconductor product developed manufactured defined above).

µPA1727 SWITCHING N-CHANNEL POWER DESCRIPTION µPA1727 N

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