µPA611TA N-CHANNEL FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING

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µPA611TA N-CHANNEL FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING

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FIELD EFFECT TRANSISTOR
µPA611TA
N-CHANNEL FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING
DESCRIPTION
µPA611TA switching device which driven directly 2.5-V power source. µPA611TA excellent switching characteristics, suitable high-speed switching device digital circuits.
PACKAGE DRAWING (Unit
0.65 +0.1 -0.15
0.32 +0.1 -0.05 0.16 +0.1 -0.06
±0.2
FEATURES
driven 2.5-V power source gate cut-off voltage
0.95 0.95 ±0.2
ORDERING INFORMATION
PART NUMBER PACKAGE
EQUIVALENT CIRCUIT (1/2 Circuit)
µPA611TA
Drain
SC-74 (Mini Mold)
Internal Diode
Gate
ABSOLUTE MAXIMUM RATINGS 25°C)
Drain Source Voltage Gate Source Voltage Drain Current (DC) Drain Current (pulse)
Note
VDSS VGSS ID(DC) ID(pulse) Tstg
±0.1 ±0.4 (TOTAL) +150
Gate Protection Diode
Source
CONNECTION (Top View)
Source Source Gate Drain Gate Drain
Total Power Dissipation Channel Temperature Storage Temperature Note Duty Cycle
Marking
Remark
diode connected between gate source transistor serves protector against ESD. When this device actually used, additional protection circuit externally required voltage exceeding rated voltage applied this device.
information this document subject change without notice. Before using this document, please confirm that this latest version.
devices/types available every country. Please check with local representative availability additional information.
Document D11707EJ1V0DS00 (1st edition) Date Published August 1999 CP(K) Printed Japan
1999
µPA611TA
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS Drain Cut-off Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain Source On-state Resistance SYMBOL IGSS VGS(off) RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Ciss Coss Crss td(on) td(off) TEST CONDITIONS VGS(on) MIN. TYP. MAX. UNIT
Data Sheet D11707EJ1V0DS00
µPA611TA
TYPICAL CHARACTERISTICS
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA
DRAIN CURRENT DRAIN SOURCE VOLTAGE
Derating Factor
Drain Current
Ambient Temperature
Drain Source Voltage
FORWARD TRANSFER ADMMITTANCE DRAIN CURRENT 1000
Forward Transfer Admittance
TRANSFER CHARACTERISTICS
Drain Current
0.01 0.001 0.0001
125°C 75°C 25°C -25°C
-25°C 25°C 75°C 125°C
0.00001 0.000001
Gate Sorce Voltage
0.0001
0.001
0.01
Drain Current
RDS(on) Drain Source On-state Resistance
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT
125°C 75°C 25°C -25°C
125°C 75°C 25°C -25°C
0.0001
0.001 0.01 Drain Current
0.0001
0.001 0.01 Drain Current
Data Sheet D11707EJ1V0DS00
µPA611TA
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT
(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE
125°C 75°C 25°C -25°C
0.0001
0.001 0.01 Drain Current
Gate Source Voltage
CAPACITANCE DRAIN SOURCE VOLTAGE
Ciss, Coss, Crss Capacitance
SWITCHING CHARACTERISTICS 1000
td(on), td(off), Swwitchig Time
Ciss Coss
td(on) td(off) VGS(on)
Crss
0.01
Drain Current
Drain Source Voltage
SOURCE DRAIN DIODE FORWARD VOLTAGE
Source Drain Current
0.01
0.001
0.0001
VF(S-D) Source Drain Voltage
Data Sheet D11707EJ1V0DS00
µPA611TA
REFERENCE
Document Name semiconductor device reliability quality control system Quality grade semiconductor devices Semiconductor device mounting technology manual Guide quality assurance semiconductor devices Semiconductor selection guide Document TEI-1202 C11531E C10535E MEI-1202 X10679E
Data Sheet D11707EJ1V0DS00
µPA611TA
[MEMO]
Data Sheet D11707EJ1V0DS00
µPA611TA
[MEMO]
Data Sheet D11707EJ1V0DS00
µPA611TA
information this document subject change without notice. Before using this document, please confirm that this latest version. part this document copied reproduced form means without prior written consent Corporation. Corporation assumes responsibility errors which appear this document. Corporation does assume liability infringement patents, copyrights other intellectual property rights third parties arising from device described herein other liability arising from such device. license, either express, implied otherwise, granted under patents, copyrights other intellectual property rights Corporation others. Descriptions circuits, software, other related information this document provided illustrative purposes semiconductor product operation application examples. incorporation these circuits, software, information design customer's equipment shall done under full responsibility customer. Corporation assumes responsibility losses incurred customer third parties arising from these circuits, software, information. While Corporation been making continuous effort enhance reliability semiconductor devices, possibility defects cannot eliminated entirely. minimize risks damage injury persons property arising from defect semiconductor device, customers must incorporate sufficient safety measures design, such redundancy, fire-containment, anti-failure features. devices classified into following three quality grades: "Standard", "Special", "Specific". Specific quality grade applies only devices developed based customer designated "quality assurance program" specific application. recommended applications device depend quality grade, indicated below. Customers must check quality grade each device before using particular application. Standard: Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade devices "Standard" unless otherwise specified NEC's Data Sheets Data Books. customers intend devices applications other than those specified Standard quality grade, they should contact sales representative advance.

µPA611TA N-CHANNEL FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING

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