µPA505T N-CHANNEL/P-CHANNEL (5-PIN CIRCUITS) µPA505T mini-mo

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µPA505T N-CHANNEL/P-CHANNEL (5-PIN CIRCUITS) µPA505T mini-mo

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FIELD EFFECT TRANSISTOR
µPA505T
N-CHANNEL/P-CHANNEL (5-PIN CIRCUITS)
µPA505T mini-mold device provided with circuits. achieves high-density mounting saves mounting costs.
PACKAGE DIMENSIONS millimeters)
0.32 +0.1 -0.05
+0.1 0.65 -0.15
0.16 +0.1 -0.06
FEATURES
source common circuits package same size SC-59 Complementary FETs provided package. Automatic mounting supported
±0.2
0.95
0.95
±0.2
CONNECTION (Top View)
Marking:
ABSOLUTE MAXIMUM RATINGS
PARAMETER Drain Source Voltage Gate Source Voltage Drain Current (DC) Drain Current (pulse) Total Power Dissipation Channel Temperature Storage Temperature SYMBOL VDSS VGSS ID(DC) ID(pulse)* Tstg RATINGS 50/-50 ±20/+16 ±100/+100 ±200/+200 (TOTAL) +150 UNIT
Duty Cycle Note left right values ratings column correspond N-ch P-ch FETs, respectively.
Document G11241EJ1V0DS00 (1st edition) Date Published June 1996 Printed Japan
1996
µPA505T
ELECTRICAL CHARACTERISTICS
PARAMETER Drain Cut-off Current SYMBOL IDSS TEST CONDITIONS 50/-50 MIN. TYP. MAX. -1.0 Gate Leakage Current IGSS ±20/+16 ±1.0 Gate Cut-off Voltage VGS(off) 5.0/-5.0 1/-1 -1.5 Forward Transfer Admittance |yfs| 5.0/-5.0 10/-10 Drain Source On-State Resistance RDS(on)1 4/-4 10/-10 Drain Source On-State Resistance RDS(on)2 10/-10 10/-10 Input Capacitance Ciss 5.0/-5.0 Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Delay Time td(on) 5.0/-5.0 10/-10 VGS(on) 5.0/-5.0 Rise Time Turn-Off Delay Time td(off) Fall Time -1.9 -2.5 UNIT
Marking: Note left right values above table represent N-ch P-ch characteristics, respectively.
µPA505T
SWITCHING TIME MEASUREMENT CIRCUIT MEASUREMENT CONDITIONS (RESISTANCE LOADED)
N-ch part
Gate Voltage Waveform
VGS(on)
Drain Current Waveform
Duty Cycle
td(on)
td(off) toff
P-ch part
Gate Voltage Waveform td(on) Drain Current Waveform Duty Cycle td(off) VGS(on)
µPA505T
TYPICAL CHARACTERISTICS
N-ch part
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA Free
Total Power Dissipation
TOTAL POWER DISSIPATION AMBIENT TEMPERATURE
Derating Factor
Case Temperature DRAIN CURRENT DRAIN SOURCE VOLTAGE Pulsed measurement
Drain Current
Ambient Temperature
TRANSFER CHARACTERISTICS 1000 Pulsed measurement
Drain Current
Drain Source Voltage GATE SOURCE CUT-OFF VOLTAGE CHANNEL TEMPERATURE
|yfs| Forward Transfer Admittance VGS(off) Gate Cut-off Voltage
Gate Source Voltage FORWARD TRANSFER ADMITTANCE DRAIN CURRENT
1000 Drain Current
Channel Temperature
µPA505T
DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE Pulsed measurement RDS(on) Drain Source On-State Resistance 1000 DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT Pulsed measurement
RDS(on) Drain Source On-State Resistance
1000
Gate Source Voltage
Drain Current
RDS(on) Drain Source On-State Resistance
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE Pulsed measurement Ciss, Coss, Crss Capacitance
CAPACITANCE DRAIN SOURCE VOLTAGE
Ciss Coss Crss
Channel Temperature
Drain Source Voltage SOURCE DRAIN DIODE FORWARD VOLTAGE
SWITCHING CHARACTERISTICS td(on), td(off), Switching Time td(off) Source Drain Current
td(on) Drain Current
Source Drain Voltage
µPA505T
P-ch part
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA Free Total Power Dissipation Derating Factor TOTAL POWER DISSIPATION AMBIENT TEMPERATURE
Case Temperature DRAIN CURRENT DRAIN SOURCE VOLTAGE -120 -100 Drain Current -0.01 -0.001 -100 Pulsed measurement Drain Current
Ambient Temperature TRANSFER CHARACTERISTICS
-0.1
Drain Source Voltage
-5.0 Pulsed measurement
Gate Source Voltage GATE SOURCE CUT-OFF VOLTAGE CHANNEL TEMPERATURE -2.4 -2.2 -2.0 -1.8 -1.6 -1.4 -1.2 |yfs| Forward Transfer Admittance VGS(off) Gate Cut-off Voltage -5.0 -5.0 FORWARD TRANSFER ADMITTANCE DRAIN CURRENT
-100
Channel Temperature
Drain Current
µPA505T
DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE
RDS(on) Drain Source On-State Resistance RDS(on) Drain Source On-State Resistance
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT Pulsed measurement
Pulsed measurement
-100
Gate Source Voltage DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE
Ciss, Coss, Crss Capacitance
Drain Current CAPACITANCE DRAIN SOURCE VOLTAGE Crss Coss
RDS(on) Drain Source On-State Resistance
Ciss
Channel Temperature
-100
Drain Source Voltage SWITCHING CHARACTERISTICS
td(on), td(off), Switching Time
SOURCE DRAIN DIODE FORWARD VOLTAGE
td(on)
Source Drain Current
-5.0
td(off) -100 -200 -500
Drain Current
Source Drain Voltage
µPA505T
REFERENCE
Document Name semiconductor device reliability/quality control system Quality grade semiconductor devices Semiconductor device mounting technology manual Guide quality assurance semiconductor devices Semiconductor selection guide Document TEI-1202 IEI-1209 C10535E MEI-1202 X10679E
µPA505T
part this document copied reproduced form means without prior written consent Corporation. Corporation assumes responsibility errors which appear this document. Corporation does assume liability infringement patents, copyrights other intellectual property rights third parties arising from device described herein other liability arising from such device. license, either express, implied otherwise, granted under patents, copyrights other intellectual property rights Corporation others. While Corporation been making continuous effort enhance reliability semiconductor devices, possibility defects cannot eliminated entirely. minimize risks damage injury persons property arising from defect semiconductor device, customer must incorporate sufficient safety measures design, such redundancy, fire-containment, anti-failure features. devices classified into following three quality grades: "Standard", "Special", "Specific". Specific quality grade applies only devices developed based customer designated "quality assurance program" specific application. recommended applications device depend quality grade, indicated below. Customers must check quality grade each device before using particular application. Standard: Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade devices "Standard" unless otherwise specified NEC's Data Sheets Data Books. customers intend devices applications other than those specified Standard quality grade, they should contact Sales Representative advance. Anti-radioactive design implemented this product.
94.11

µPA505T N-CHANNEL/P-CHANNEL (5-PIN CIRCUITS) µPA505T mini-mo

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